תהליך CMOS
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Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process Manufacturing Process ךךךךךCMOS ךךךך’ ךךךך ךךך ךךךךךך ךךךךךךךךךךך ךךךךךךךךךךךך- ךךךךךךךךךך ךך)ךךך ךךךךךךך ךך ךךך ךךךךך ךךךךךך(
description
תהליך CMOS. פרופ ’ יוסי שחם המחלקה לאלקטרוניקה פיזיקלית אוניברסיטת תל-אביב ( לפי ההרצאות של יאן ראבאי מברקלי ). הכנת הפרוסות והליתוגרפיה הבסיסית. תהליך CMOS. דוגמה - מהפך CMOS. This two-inverter circuit (of Figure 3.25 in the text) will be. manufactured in a twin-well process. - PowerPoint PPT Presentation
Transcript of תהליך CMOS
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
CMOSתהליך
פרופ’ יוסי שחםהמחלקה לאלקטרוניקה פיזיקלית
אוניברסיטת תל-אביב)לפי ההרצאות של יאן ראבאי מברקלי(
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
הכנת הפרוסות והליתוגרפיה הבסיסית
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
CMOSתהליך
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
CMOSדוגמה - מהפך
This two-inverter circuit (of Figure 3.25 in the text) will bemanufactured in a twin-well process.
VDD VDD
Vin Vout
M1
M2
M3
M4
Vout2
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
Layout - תרשים
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
תהליך הייצור
http://tanqueray.eecs.berkeley.edu/~ehab/inv.html.
של פרופ’ אנדי ניורייטר SIMPLהתצוגה מבוססת על התכנית מאוניברסיטת ברקלי.
אינפורמציה מלאה נמצאת באתר:
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
התחלה
Starting wafer: n-type withdoping level = 10 13/cm3
* Cross-sections will be shown along vertical line A-A’
A
A’
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
WELLהגדרת ה-
(1) Oxidize wafer(2) Deposit silicon nitride(3) Deposit photoresist
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
WELLבניית ה-
(4) Expose resist using n-wellmask
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
WELLבניית ה-
(5) Develop resist(6) Etch nitride and(7) Grow thick oxide
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
Nמסוג WELLבניית ה-
(8) Implant n-dopants (phosphorus)
(up to 1.5 m deep)
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
Pמסוג WELLבניית ה-
Repeat previous steps
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
חמצון השער
0.055 m thin
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
תחמוצת השדה
Uses Active Area mask
Is followed by threshold-adjusting implants
0.9 m thick
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
פוליסיליקון
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
השתלת יונים לצמתות
n+ source-drain implant(using n+ select mask)
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
השתלת יונים לצמתות
p+ source-drain implant(using p+ select mask)
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
פתיחת חורים
(1) Deposit inter-level dielectric (SiO2) — 0.75 m
(2) Define contact opening using contact mask
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
- אלומיניום1מתכת
Aluminum evaporated (0.8 m thick)
followed by other metal layers and glass
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
מבנה מתכת מתקדם יותר
Digital Integrated CircuitsAdapted from EECS 141 copyright UCB 1996
Manufacturing ProcessManufacturing Process
הקר בין התרשים למציאות
