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SIOC 實驗 5 ： Embedded Flash 實驗

郭明聰 / 陳慶瀚MIAT 實驗室

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實驗目的 瞭解 STM32 內部 Flash 記憶體與處理器界面的

架構；實驗存取 Flash 的資料，並透過 VCP 傳送到超級終端機觀察結果

Flash 界面架構

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SIOC 為 64KB

FLITF Features

Read interface with prefetch buffer (2x64-bit words)

Option byte Loader Flash Program / Erase operation Read / Write protection

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Memory Mapping

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Memory Mapping

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0x800 3000DFU 程式區塊， User 不可使用

0x800 80000x800 C000

Embedded Flash Memory

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Flash memory interface registers

Flash memory interface register

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Bit 9 OPTWRE: Option bytes write enableWhen set, the option bytes can be programmed. This bit is set on writing the correct key sequence to the FLASH_OPTKEYR register.This bit can be reset by softwareBit 8 Reserved, must be kept cleared.Bit 7 LOCK: LockWrite to 1 only. When it is set, it indicates that the FPEC and FLASH_CR are locked. This bit is reset by hardware after detecting the unlock sequence.In the event of unsuccessful unlock operation, this bit remains set until the next reset.

Bit 6 STRT: StartThis bit triggers an ERASE operation when set. This bit is set only by software and reset when the BSY bit is reset.Bit 5 OPTER: Option byte eraseOption byte erase chosen.Bit 4 OPTPG: Option byte programmingOption byte programming chosen.Bit 3 Reserved, must be kept cleared.Bit 2 MER: Mass eraseErase of all user pages chosen.Bit 1 PER: Page erasePage Erase chosen.Bit 0 PG: ProgrammingFlash programming chosen.

FLASH library function

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FLASH library function(conti.)

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Main Flash memory programming

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Flash memory Page Erase

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Flash memory Mass Erase

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Option byte programming

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Option byte Erase

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實驗

實驗 1 ： flash memory 資料存取實驗 2 ：非揮發性資料寫入實驗 3 ： flash 資料寫入鎖定

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實驗 1 ： flash memory 資料存取

程式架構

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Programming

BootupSTM32F10x

NVIC Configure

int main(void){ u32 *temp; Set_System();

/*pause*/ getchar(); printf("start \r\n"); FLASHStatus = FLASH_COMPLETE; MemoryProgramStatus = PASSED; Data = 0x15041925;

/* NVIC configuration */ NVIC_Configuration(); …....

Flash memory R/W operation

FLASH Unlock

FLASH ClearFlag

FLASH ErasePage

FLASH ProgramWord

程式架構 (conti.)

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/* Unlock the Flash Program Erase controller */FLASH_Unlock(); /* Define the number of page to be erased */ NbrOfPage = (EndAddr - StartAddr) / FLASH_PAGE_SIZE; /* Clear All pending flags */FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);/* Erase the FLASH pages */for(EraseCounter = 0; (EraseCounter < NbrOfPage) && (FLASHStatus == FLASH_COMPLETE); EraseCounter++){ FLASHStatus = FLASH_ErasePage(StartAddr + (FLASH_PAGE_SIZE * EraseCounter));}/* FLASH Word program of data 0x15041979 at addresses defined by StartAddr and EndAddr*/ Address = StartAddr;while((Address < EndAddr) && (FLASHStatus == FLASH_COMPLETE)){ FLASHStatus = FLASH_ProgramWord(Address, Data); temp=(u32 *)Address; printf("0x%x data is 0x%x \r\n",Address,*temp); Address = Address + 4;}

Flash memory R/W operation

FLASH Unlock

FLASH ClearFlag

FLASH ErasePage

FLASH ProgramWord

預設定義說明 #define StartAddr ((u32)0x08008000)

定義 Flash 使用起始點 使用起始點必需大於 0x8003000 + Code Size

#define EndAddr ((u32)0x0800C000) 定義 Flash 使用結束點 使用起始點必需小於 0x8040000

Data = 0x15041975; 寫入資料 32Bit

#define FLASH_PAGE_SIZE ((u16)0x400) 每一個 Page 有 1KByte

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• 附註 : 0x8000000~0x8003000 為 DFU 程式區塊，使用此區塊將造成無法燒錄程式

• Code Size 可由產生的 HEX 檔得知

Intel HEX Format

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HEX Example

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資料填入起始位置為 0x08003000 每一行有 0x10(16) 個 Bytes 最後一筆資料為 04000005080030EDD2 資料結束點為 0x08005C10 (0x08005C10 -0x08000000)/0x400 = 23 需以 0x400 為單位，所以可存的 flash 位置起點為 0x08006000

:020000040800F2:10300000100E002001310008913E0008DD3D00084F………:105C00001A4497292829106908011B3C020406CC74:0C5C10002D0102030404850607080900AA:04000005080030EDD2:00000001FF

程式執行結果

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Flash 存取控制流程

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改變 Putty Lines of scrollback 數值

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實驗 1 注意事項 #define StartAddr ((u32)0x08020000) /* 定義 Flash 使用起始點

*/

使用起始點必需大於 0x8003000 + Code Size 0x8000000~0x8003000 為 DFU 程式區塊，使用此區塊

將造成無法燒錄程式 Code Size 可由產生的 HEX 檔得知

u32 Address = 0x08020000; 定義 Address 初始值 初始值必需與 Flash 使用起始點相同

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實驗 2 ：非揮發性資料寫入觀察 Flash 寫入後電源關閉 ( 拔除 USB連線 ) ，再重新接電後觀察寫入資料是否仍存在

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實驗 2 程式說明

/* Erase the FLASH pages */ for(EraseCounter = 0; (EraseCounter < NbrOfPage) && (FLASHStatus == FLASH_COMPLETE); EraseCounter++) { FLASHStatus = FLASH_ErasePage(StartAddr + (FLASH_PAGE_SIZE * EraseCounter)); }

/* FLASH Word program of data 0x15041979 at addresses defined by StartAddr and EndAddr*/ Address = StartAddr;

while((Address < EndAddr) && (FLASHStatus == FLASH_COMPLETE)) { FLASHStatus = FLASH_ProgramWord(Address, Data); temp=(u32 *)Address; printf("0x%x data is 0x%x \r\n",Address,*temp); Address = Address + 4; }

Flash memory R/W operation

FLASH ErasePage

FLASH ProgramWord

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實驗 3 ： flash 資料寫入鎖定

實驗 3 說明 注意 :

請使用預設 0x08006000 之後的位置，避免覆蓋 DFU與使用者程式碼區塊

更改寫入位置測試寫入鎖定時需同時更改 FLASH_EnableWriteProtection 鎖定之 Page

練習 : 打開 #define WriteProtection_Enable 測試是否可寫入 打開 #define WriteProtection_Disable 測試是否可寫入 修改存取位置測試是否正常 修改寫入資料測試是否正常

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/* Uncomment this line to Enable Write Protection *///#define WriteProtection_Enable/* Uncomment this line to Disable Write Protection */#define WriteProtection_Disable#ifdef WriteProtection_Disable printf("WriteProtection_Disable \r\n"); if (ProtectedPages == 0x00) {/* Pages are write protected */ /* Disable the write protection */ FLASHStatus = FLASH_EraseOptionBytes(); /* Generate System Reset to load the new option byte values */ NVIC_GenerateSystemReset(); }#else #ifdef WriteProtection_Enable printf("WriteProtection_Enable \r\n"); if (ProtectedPages != 0x00) {/* Pages not write protected */ /* Disable the write protection */ FLASHStatus = FLASH_EraseOptionBytes(); /* Enable the pages write protection */ //FLASHStatus = FLASH_EnableWriteProtection(FLASH_WRProt_Pages12to13 |FLASH_WRProt_Pages14to15); // 0x00006000 / 0x800 =12 0x0000 8000 / 0x800= 16

/* Generate System Reset to load the new option byte values */ NVIC_GenerateSystemReset(); } #endif#endif

實驗 3 說明

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Q & A