1

Chapter 10

2

3

CVD vs.

SiO2SiO2

SiSi Si

4

CVD vs.

CVD

5

- (PMD)- (IMD)

(STI) (PD) (ARC)

6

USGW

P

NP

BPSG

p+ p+n+n+ USG

W

Metal 2, AlCu

P

1, AlCu

AlCu

STI STI

PMD ILD1

IMD ILD2

ARCPD1

PD2

WCVD

TiNCVD

CMOS

7

STIN:

= 1 + 1 + 1 + (N1) + 1 = N + 3

STI

PMD IMD PD

8

(CVD) (Chemical Vapor Deposition)

9

CVD

Si () SiH4 () SiCl2H2 (DCS)

Si () SiCl3H (TCS) SiCl4 (Siltet) LPCVD SiH4, O2 SiO2 () PECVD SiH4, N2O

PECVD Si(OC2H5)4 (TEOS), O2

LPCVD TEOS

APCVD&SACVDTM TEOS, O3 (ozone)

Oxynitride SiH4, N2O, N2, NH3

PECVD SiH4, N2, NH3 Si3N4 LPCVD SiH4, N2, NH3 LPCVD C8H22N2Si (BTBAS) W () WF6 (), SiH4, H2 WSi2 WF6 (), SiH4, H2

TiN Ti[N (CH3) 2]4 (TDMAT) Ti TiCl4 Cu

10

CVD

.

11

CVD

12

13

14

CVD

APCVD

LPCVD

PECVD

15

(APCVD)

CVD APCVD APCVD(O3-TEOS) STI PMD

16

N2 N2

APCVD

17

(LPCVD) 0.1 ~ 1 Torr

(650C)(IMD)

18

19

(PECVD)

1 ~ 10 Torr

(IMD)

20

RF

(PECVD)

21

(Step Coverage)

CVD (Aspect ratio) (Conformality) (Overhang)

22

a

b

c

d

CVD

= b/a = d/a

= b/c = (c - b)/b

= h/w

h

w

23

24

AB

C

270

90

180

25

A: 270, C: 90 A

26

27

28

APCVD

LPCVD

29

PSG

,

30

: //()

CVD ()

O3-CVDCVD CVD()

31

PMD: (zero tolerance)

IMD: k()

32

PMD

W CVD

33

W CVD

34

//

AlCu

AlCu

AlCu

USG

USG

USG

35

36

37

38

l

CVD

39

(physisorption) (chemisorption)

40

2 eV IMDPD PECVD (10 to 20 eV)

41

0.5 eV

400 C

42

43

CVD

(SiH4)

(tetra-ethyl-oxy-silane, TEOS ,Si(OC2H5)4)

44

CVD : CVD

PECVD PMD (DARC) CVD

LPCVD CVD

W CVD WSix

45

CVD :

(), ,

46

H

Si

H

H

H

Si

H

H

H H

47

CVD:

, SiH3,

SiH2, SiH, ,

48

CVD : (TEOS)

(tetra-ethyl-oxy-silane, TEOS ,Si(OC2H5)4)

TEOS

49

Si

H

H

H H

H

H H

H

C

C

O

O

H

H H

H

C

C

C C O C CO

HH HH

H HH H

TEOS

50

TEOS

,, PMD IMD CVD TEOS

51

1

3

10

30

100

10 20 30 40 50 60 70 80 90 100 110

()

(C)

1

3

10

30

100

TEOS

52

TEOS

168 C (H2O)100 C

, ,

53

MFC

TEOS

54

TEOS

MFC MFM

55

LFC

MFC

TEOS

TEOS, TEOS

56

100%

57

SiH4 3x10-43x10-5

SiH3 0.04 0.08

SiH2 0.15

SiH 0.94

TEOS 10-3

WF6 10-4

58

TEOS

TEOS

59

Ea

C.R. = A exp (-Ea/kT)

60

1/T

lnD

.R.

= -Ea/k

61

.

D.R. = C.R. [B] [C] []

62

= D dn/dx [B] [C] []

63

64

CVD

()