- 1 -

(Power Electronic)

: Thyristor ,

.

1900 - 1950

1948 , ,

1956 (SCR: silicon controlled rectifier)

PNPN

1958 GE

1970 , , (BJT),

MOSFET, (IGBT), (SIT)

- :

power MOS-FET, IGBT

- Power Converter

AC - DC Converter ( ) : (controlled rectifier)

AC - AC Converter ( ) : ,

DC - DC Converter ( ) : chopper,

DC - AC Converter ( ) : inverter

- Control of power electronics

Microcomputer control : , feed back loof

, , ( ) ,

. , , ,

- 2 -

.

1. Diode

A K

: 3000V , 3500V

: 3000V, 1000A 0.1 - 0.5 s

2. Thyristor , SCR(silicon controlled rectifier)

A KG

: 6000V, 3500A

3. SITH

A KG

, -

4. GTO (gate turn off SCR)

A K

G

- , -

4000V, 3000A

5. MCT

MOS ,

1000V, 100A

6. TRIAC (triode AC switch)

7. LASCR (light activated silicon controlled rectifier)

, 6000V, 1500A, 200 -400

8. NPN BJT (Bipolar Junction Transistor)

: 10KHz, 1200V, 400A

- 3 -

9. IGBT

,

BJT MOS-FET .

, BJT IGBT

10. N-Channel MOS-FET

MOS-FET ,

KHz 1000V, 50A

11. SIT (Static Induction Transistor)

,

100KHz, 1200V, 300A

12. RCT

, 2500V, 1000A

13. GATT

- - : 1200V, 400A

14. NCT

MOS

15. SSS (silicon symmtrical switch)

16. SUS (silicon unilateral switch)

17. SBS (silicon bilateral switch)

18. LAS (light activated switch)

19. SCS (silicon controlled switch)

20. LASCS (light activated silicon controlled switch)

: , , ,

, , ,

, ,

- 4 -

( ) .

:

PN

, , .

: 25 s ,

1[A] A

50[V] 5[KV]

: 5 s

,

1[A] A

50[V] 3[KV]

: .

.

1[A] 300[A] 100[V]

.

, . ,

.

-V' +V ,

. .

- 5 -

-V' -V'

V

t

t

tf r

trr

ts tt

I

. tf r .

ts

.

tr .

trr=ts+tt .

.

: AC-DC (rectifier) .

R

L

DS

+

-

Dm

S ON .

.

Dm , .

(Thristors)

: PNPN PN 3

, ON, OFF

- 6 -

, ,

: , , , , , , ,

: , ,

: , ,

(chopper) (inverter) : , ,

1. , .

2. .

3. .

4. .

1. : 6000[V], 6000[A]

2. : A, V 20 30 s

3. : 200[A], 800[V] GTO, IGBT

- 7 -

.

.

600[A], 1000[V] .

DC-DC DC-AC .

1. (BJT: bipolar junction transistor)

2. (unipolar transistor)

(MOSFET : metal-oxide-semiconductor field-effect transistor)

3. (SIT : static induction transistor)

- 8 -

4.

(IGBT : insulated-gated bipolar transistor)

MOS-FET

- 9 -

NPN

(common-collector), (common base),

(common-emitter) .

(cutoff), (active), (saturation) . - ,

. ,

, - . CBJ BEJ

. -

, .

, .

IB IC .

=hFE=IcIB

. ,

CBJ .

IC=IB+ICEO

ICEO - , I B

- 10 -

.

IE=IB(1+)+ICEO I B(1+)

. : (C), (E), (B)

VCBO, VCEO, VEBO .

- (V CBO ) : -

- (V CEO ) : -

, - VCER ( ), VCES ( ),

VCEX ( ) .

- (B-E) : VCER

- (B-E) : VCES

- (B-E) : VCEX

VCBO>VCEX>VCES>VCER>VCEO

- (V EBO ) : -

.

(I C ) :

hFE .

.

(I B ) : IC 1/5 - 1/10

. .

. (SOA : safety operation area)

, .

SOA : (t w )

(VCEIC ) VCE IC

SOA : V CE IC

(VCEIC ) , .

- 11 -

(t w ) : ,

.

:

. ( )

: ( )

( ) h FE

(h FE ) .

100-120[ ] h FE 20-30[%] .

h FE VCE =5[V]

VCE . hFE .

IB > 0.5I C( max)

hFE [A]

V CE(SAT) ( - )

- 12 -

IC

, .

IB 2I C( max)

h FE [ A]

( ) -

- . -

- .

( )

PTR PTR -

, dVdt

PTR

.

- 13 -

1 1 . 2 2

.

.

TTL

.

. MOSFET

(BJT) ,

. .

, MOSFET , .

ns . MOSFET

.

MOSFET MOSFET ( ) MOSFET .

- 14 -

. SIT

SIT .

SIT .

, , , 0.25 s .

. IGBT

G

C

E

IGBT BJT MOSFET .

MOSFET , BJT

.

IGBT MOSFET . , ,

MOSFET . IGBT BJT .

MOSFET .

- 15 -

: P N .

, , .

:

: SCR

: SCR

.

Anode

Gate

Cathode

npnp

J2J3

J1

A

GK

Thyristor : turn on, turn off , pnpn 4

pn , , ,

.

SCR .

SCR (20mA) . SCR , .(10-20 sec)

- 16 -

v-i

J 1 J3 . J2 ,

. , (forward blocking) (off-state)

(off-state current)ID .

- V AK , J2 . (avalanche breakdown) , (forward breakdown voltage) .

. 4

1[v] .

(latching current)IL . , -

. IL

.

- 17 -

. , J2

. (holding current)IH J2

. mA IL . IH

.

J 2 J1 J3 .

(reverse current) IR .

-

1. (thermal) : -

. . .

2. (light) : , - . LA(light-activated)SCR

.

3. (high voltage) : - VBO , .

.

- 18 -

4. dv/dt : - ,

.

dv/dt .

5. (gate current) :

,

. .

(turn-on time) t on . ton 10%

90% . td tr

.

-

- 19 -

1. - .

.

2. .

.

3. tG

. tG ton

.

di/dt

.

,

.

di/dt LS .

di/dt

dv/dt

- 20 -

S1 t=0 , T1

dv/dt . dv/dt CS

. T1 Rs . RC dv/dt

.

-

I H

.

. .

.

1. : ,

. tq 50 100 s . SCR . 1.15V 2.5V .

2. : ( , ) . , 5-50 s

.

3. (GTO ; gate turn off thyristors) :

.

A K

G

550A, 1200V GTO 3.4V .

- 21 -

(1) ,

.

(2) .

(3) .

(4) .

(1) .

(2) .

(3) 10:1 .

(4) ( / ) 600 .

(5) . GTO .

4. 3 (TRIAC) : TRIAC ,

AC . SCR

. .

TRIAC

- 22 -

5. (RCT : Reverse Conducting Thyristors) :

SCR

, .

- 23 -

.

.

3 .

( ) . .

.

6. (SITH : Static Induction Thyristor) : MOSFET . SITH

,

. SITH , .

SITH dv/dt di/dt

1-6 s . 2500V 500A.

7. (LASCR : Light Activated Silicon Controlled Rectifiers) :

. -

. . LASCR

.

- 24 -

8. FET (FET-CTH ; FET-Controlled Thyristor)

FET

MOSFET . MOSFET

, 3V ,

. , di/dt, dv/dt .

9. MOS (MCT) : 4 MOS .

(1) .

(2) .(300A, 500V MCT

0.4 s, 1.25 s)

(3) .

(4) .

(5) .

MCT

- 25 -

10. 2 (SSS: Silicon Symmetrical Switch)

T2

T1

(Sidac) .

2 3

.

SSS T 1 T2 VBO dv/dt .

SSS SCR

. .

SCR

: , ,

: , ,

1.

(1)

- -

(V RRM) , (VROM ) : - RGK ( 1 ) -

( )

- 26 -

(V RSM), (VROM ) :

- . ,

.

- (V RGM ) :

.

(2) OFF

OFF OFF

- - .

OFF (V DRM ) : - (

1 ) OFF

.

- (V FGM ) : - ( -T1 ) ON ( )

.

- 27 -

2.

(1)

TJMAX .

ON (I T(AV)), (IF(AV) ) :

( 180) 1 .

ON (I T(RMS)), (IF ) :

.

- (I GM ) :

T1 ON ( )

.

(2) ON ( didt

)

(N )

.

.

- 28 -

( ) ,

.

(3)

TJMAX 10

100 . .

1 - ON (I TSM ) : ,

1 .

2 (I 2 t) : ITSM , 10ms

2 .

- 29 -

I2 t I2 t

.

3.

(T j ) : .

. ( ) TJMAX

.

(Tstg) :

.

.

1.

(V GT ) (VGD ) : ON -

-

-

.

- 30 -

ON (V TM ) : ON ON

ITM - ( )

.

2.

(I DRM, IRRM ) : OFF

. , OFF

.

-RGK ( 1 ) T J MAX

VDRM ( OFF )

OFF (IDRM ) .

VRRM ( )

(IRRM ) .

- 31 -

(I GT ) : .

(I L ) : IGT

OFF .

. 1.5 3 .

(I H ) : ON

- RGK

, -( ).

- 32 -

3.

(R th(J-a) ) :

.

(t q ) : ( )

ON . ,

. ON OFF .

ON

- 33 -

( )

.

,

.

< >

:

.

( ) .

- 34 -

: 0

: 2

E R Eda

Eda =12

2

0ER d=

12

2

02Vsin d=

2V

1+ cos2

= 0.225V(1+ cos)

E da .

( 2 s) .

50 s

.

t d ton

.

,

- 35 -

.

SCR A-K

- 36 -

SCR .

.

- 37 -

RC ( 180)

1.

, .

( :

E=-IR , - .)

( : )

- 38 -

UJT

(UJT), ( ) :

. UJT

E, 1 B1 , 2 B2. B1 B2 . RBB 9.1k

.

UJT(uni-junction transistor) (double base diode)

.

, .

- 39 -

UJT

E B 1, B2 VBB , N Si

RBB B1-E, E-B2 RB1, RB2 VBB .

VEB1 =

RB1RB1+RB2

VBB=R B1RBB

VBB

=VBB

( : , 0.51 0.82 )

VP =VBB+VD (VD : 0.5 0.7V)

1 V EB1 VP UJT OFF

E 1 IE 0 .

V EB1 VP UJT ON E B1

. B2 B1 .

VP UJT . UJT

. UJT

1 .

[ ] IE =0 IB =1.65[mA] , VEB 7.5[V] UJT

. EE 10[V] .

- 40 -

RBB =VBBIB

= 101.6510-3

=6 [k]

VP =7.5V , VP =VBB +VD =0.7

RB1=R BB=0.76=4.2[ k]

RB2=R BB-RB1=6-4.2=1.8 [k]

. UJT

T=1f

R1C1ln1

1- =2.3R1C1log101

1-

[ =0.63 T=R 1C1 . ]

R 1,C1 , R1

(2k 3M ) .

R 1( min)V1IV

, R 1( max)V1-VP

IP=

(1-)V1I P

,

V1 10 35V, R 1 3 500[k ] .

[ ] C1 =0.1[ F], UJT R BB=7[k ], I P=1[ A], =0.6 ,

- 41 -

IV =6[mA]

(a) R1 (b) ,

R 1( min)=V1IV

= 10[V]6[mA]=1.66 [k]

VP =VBB +VD=0.610+0.5=6.5[V]

R 1( max)=V1-VP

IP= 10-6.5[V]1[A]

=3.5[M]

T max=R 1(max)C1=3.51060.110 -6=0.35[s]

f min =1

T max= 10.35 =2.86[ Hz]

Tmin =R 1(min)C1=1.661030.110 -6=0.166[ ms]

f max=1

Tmin= 10.166 [ms] =6.0 [kHz]

: .

UJT

- 42 -

PUT (programable uni-junction transistor)

( PUT : Programmable

Unijunction Transistor) : PUT.

PUT

- 43 -

N .

, R BB, Ip, Iv ,

.

PUT

, .

R B1, RB2 , RB1 RB2

.

- 44 -

VP=VB =RB1

RB1+RB2VB =

RB1RB1+RB2

R maxVB-VP

IP R min

VB -VVIV

T=RC lnVB-VVVB-VP

VV 0 T=RC lnRB1+RB2

RB2

R, C RB1, RB2

.

SUS

1 3 .

SUS .

SBS

SUS .

3 .

- 45 -

SBS SCR

2 .

.

-SCR

.

100V 12V

30V .

. .

- 46 -

SCR

1 SCR

(t rr ) : .

(t gr ) :

. .

- 47 -

( SCR -Er

0 0 . )

1. SCR

SCR (t off ) SCR 0 SCR (trr+tgr ) .

SCR ,

.

SCR ,

- 48 -

2. : (tc ) SCR

. SCR (toff ) .

SCR .

2

SCR 0

, ( ,

commutation circuit) .

( ) ( ) 2 .

1. ( )

( )

SCR (t off ) .

SCR dV/dt

2. ( )

SCR ,

. .

3

( )

LC

SCR C LC

SCR C LC )

- 49 -

1. ( )

A

SCR1 C .

SCR SCR

.

2. LC

B

IR R , LC

C .

SCR .

- 50 -

3. SCR C LC

SCR2 . C

. SCR1 C SCR1 SCR2 CSCR2 SCR2 .

SCR2 SCR1 .

C

4. SCR C LC

(a) SCR2 C (a) . C SCR2 .

SCR1 2 . R

C, SCR 1 , L D C D . SCR2 SCR2

C SCR1 SCR1 . (b)

.

(a) (b)

SCR (D )

5.

(a) SCR1 . SCR1

Q1 . E2 SCR1

- 51 -

SCR1 . Q1 .

(b)

. . SCR1 . SCR1 (+) SCR

. C 1[V]

0 . SCR ,

SCR (-) .

(a) (b)

6.

(+) . (-) SCR (-) SCR . SCR

.

- 52 -

.

. (delay angle) (firing angle)

. .

. ac dc

ac-dc .

( ) , (forward biased) . T1

t= , T1 ,

. t= , t 1 (reverse biased) ,

. t=

(delay angle) (firing angle) .

- 53 -

Vdc

Vdc=12

VmSint d(t)=

Vm2

[- cost]

=Vm2

(1+ cos)

0 V dc Vm

0 .

=0 V dm Vdm=Vm2

.

(single-phase semiconverters)

- 54 -

Vdc

Vdc=22

VmSint d(t)=

2Vm2

[- cost]

=Vm

(1+ cos)

0 V dc 2Vm

0 .

T 1 . T1 t=

, T1 D2 .

t(+) , Dm . Dm .

T1 D2 Dm . T1 D2

. , T 2 , t=+ T2 Dm . Dm

, T2 D1 .

(single-phase full converters)

- 55 -

, T 1 T2 . t=

, T1 T2 .

, T1 T2 t= . , T 3 T4 .

T3 T4 T1 T2

. T1 T2 ,

T1 T2 T3 T4 .

vs is ,

. . +

, v , , . . 15kw

.

, 2 .

Vdc

Vdc=22

+

VmSint d(t)=

2Vm2

[- cost] +

=2Vm

cos

0 V dc 2Vm

-

2Vm

.

(dual converter)

, . 4

, . .

1 2 1 2 , Vdc1 Vdc2 . ,

.

.

( ) ,

. ,

Lr .

- 56 -

.

, , .

.

1. .

- 57 -

2. ,

.

3. 1 .

.

.

.

Vdc=32

56 +

6 +

Vm sint d(t) =3 3Vm

2cos

- 58 -

3 1 120kW .

, 3 .

.

3f s , 0 .

- 59 -

6 t76 , T1 .

T 1 t=( 6 +) , T1 D1 , Vac .

t=76 Vac , Dm . Dm

T1 D1 .

T 1 T2 t=56 +

, T1 D2 . 3 ,

23 Dm .

van =Vmsint

vbn =Vmsin(t- 23 )vcn =Vmsin(t+ 23 )

vac =van-vcn= 3Vmsin(t- 6 )vba =vbn-van= 3Vmsin(t- 56 )vcb =vcn-vbn= 3Vmsin(t+ 2 )vab =van-vbn= 3Vmsin(t+ 6 )

.

Vdc=32

76

6 +

3Vmsin(t- 6 )d(t)=3 3Vm

2(1+ cos)

- 60 -

3

3 2 120kW .

3 . 6fs ,

3 .

- 61 -

t=6 + T6 , T1

. ( 6 +)t( 2 +) T1 T6 vab(=van-vbn) .

t=2 + T2 T6 .

T6 .

( 2 +)t( 56 +) T1 T2 , vac .

van =Vmsint

vbn =Vmsin(t- 23 )vcn =Vmsin(t+ 23 )

.

vab =van-vbn= 3Vmsin(t+ 6 )vbc =vbn-vcn= 3Vmsin(t- 2 )vca =vcn-van= 3Vmsin(t+ 2 )

Vdc=3

2 +

6 +

3Vm sin( t+ 6 )d(t)=3 3Vm

cos

- 62 -

ac-dc

(1)

(2) ( )

(3)

(4)

- 63 -

SCR

1 .

SCR 1 .

SCR

.

SCR ,

,

, . SCR 1 .

SCR SCR

.

SCR

. .

SCR

2 SCR SCR , , ,

, . SCR

.

- 64 -

SCR

: .

SCR

. SCR

.

, : SCR

. 1 SCR

. SCR .

: .

R S , C

SCR .

RD .

- 65 -

SCR

RD .

SCR

.

.

SCR

.

.

- 66 -

3 SCR 1.

SCR

2.

SCR ( ) LASCR

.

SCR

3.

1 SCR 1 SCR .

SCR 1 ,

SCR .

SCR 1 , -

. SCR2 C1

.

- 67 -

SCR

4 SCR SCR

SCR ,

1 .

SCR 1 SCR

.

SCR

. SCR

.

SCR

.

1.

.

.

2. SCR

SCR

. SCR ,

.

SCR .

.

= (1- ITnp IM )100 [%] IT :

- 68 -

IM : 1

np :

3.

SCR 30[%]

.

. SCR

.

.

1 1. SCR

SCR ,

.

SCR , , , .

, , , .

R .

, , , .

CR 1 , CR2 SCR .

- 69 -

2.

,

SCR .

SCR

.

3.

- 70 -

(a)

1 SCR .

(b) SCR ,

SCR

.

2 0 SCR

.

1.

[ a ]

.

R 1, C1 .

R 1, C1 90 0

.

[b ]

.

L 1 T2

(-) .

- 71 -

(R1+R2 ) C1 .

C1 .

C1 R3 R4 .

2. SCR

SCR SCR -

SCR 1 C1 .

- C 1 R2 SCR2 .

+ SCR 1

.

3.

CR 1 C1 (R1+R2 ), R3, R4

.

Q 1 -

Q1 SCR .

R F TH Q1

OFF .

Q 1

.

- 72 -

3 SCR

.

SCR .

C

SCR1

"ON" "OFF"

SCR 1 SCR1

.

C R 1 (+) .

SCR 2 C SCR1 SCR

- . SCR1 .

SCR 2 SCR1 SCR1

.

R 1 2 SCR2

.

C

C1.5toffI

E[F]

CtoffI

E[F]

toff : SCR ( s)

I : ( ) [A]

E :

- 73 -

.

+ SCR 1 1 , - C

SCR1 SCR2 2 .

4 SCR 1.

SCR

SCR1, SCR2

,

.

SCR 1, SCR2

.

- 74 -

SCR

SCR s

.

SCR1, SCR2 .

2. SCR

SCR 1 . C1

.

SCR 2 C1 SCR1

.

R 1 CR1 SCR2

SCR2

.

. R4 1

s

R4 .

- 75 -

SCR 1 R1 .

20mA

.

20mA

T1 1 2 SCR3

.

3.

R 1

UJT1 UJT1

SCR .

.

.

R 3 R2

UJT2 SCR

.

- 76 -

5 ,

UJT/SCR

CR 1 UJT . R1 R2 (R1+R2 )

C1 UJT UJT SCR1

.

UJT CR 2 2V

.

(R 1+R2 ) C1 .

6 .

T 1 6.3[V] 2 4

.

0 , SCR

.

SCR - .

- 77 -

(+) SCR CR 1 1

, 180 CR2

2 .

(nA) .

35[nA] 100[M ] .

C 2 . C 1 C1 C2 Q1 . Q 1 SCR1

.

- 78 -

1.

1.1. Power Electronics (thyristor) ,

.

, , ( ), ,

. , ,

.

1.2.

: ( ),

. PWM

.

: ,

:

:

. : , , ,

, : .

(UPS)

2. 2.1.

, :

, ,

,

- 79 -

. .

, .

:

.

.

:

.

.

20[kHz]

.

2.2. ,

(chopper) .

. ,

GTO .

2.3.

(arm)

.

2.4.

PWM .

, GTO

.

,

.

2.5.

.

.

- 80 -

PWM .

.

3. 1

, 1

, 1 .

.

3.1. : P N 2

P (Anode), N

(Cathode) .

3.2. : 3 ,

.

3.3. ( ) GTO : GTO Gate off Thyristor

.

, . GTO

.

:

. [V],

[A] ,

. Bipolar power transistor 1,200V/800A

kHz

Power-MOSFET : MOSFET Metal Oxide Semiconductor Field Effect

Transistor (MOS )

, ( )

. MOS FET kHz

.

- 81 -

1.

2. ,

2 .

3. .

4. .

IGBT : IGBT 10kHz

, MOS FET , Bipolar power

transistor .

, , ,

,

IGBT .

PWM IGBT

.

3kHz

IGBT 15kHz .

0

20

40

60

80

100

120

140

160

180

200

0 10 20 30 40 50

IG BT:2MB150-060

BJT :2D150M-06020kHz

10kHz

Icp (A)

(W)

PWM

+

G

C

E

+

_

ic

VCE

G

C

E

Q2

Q3Q1

iB

(a) (b)

- 82 -

OFF OFF

ON

0

VGE=0

VCE

iC VGE=VGE(on)

OFF OFF

ON

0 VCE

iC

Switching

(c) - (d)

IGBT (N )

G, C, E (gate), (collector), (emitter)

, VGE ic

. IGBT MOSFET, BJT, GTO

(hybrid) . IGBT ,

MOSFET ,

BJT .

BJT (on-drop)

MOSFET .

GTO .

IGBT

, MOSFET . IGBT 3300-1200A

- , 1996 4500-1200A

.

4. 4.1. ,

,

.

- 83 -

. ( 1

1.5[A], 1[A/ ])

.

5.

5.1. ,

.

.

,

( ) .

.

6.

2

.

2

di/dt .

- 84 -

L

RS DS

D

R

CS

Q

di/dt

. ,

( dv/dt )

.

(inverter)

: , .

: .

1.

- 85 -

.

3

.

t (dead time) .

,

.

.

: ac , ,

: DC

( )

.

Q 1 Q2 , Q3 Q4

. .

[rad] V 1 Ed

.

V1=2 2 Ed sin

2

, E d .

- 86 -

:

. Ed 2

.

: 2

. 2

.

: .

- 87 -

3

3

180 , 1 6

. ODC Ed /2

180 .

E d 120 ,

6 .

V 1 Ed

V1=( 6 )Ed

- 88 -

,

. ,

, ,

.

,

,

.

.

, .

.

3

- 89 -

GTO 3 , GTO

.

.

,

.

3

120

. 1 6 , p, n

1 120 , Id 120

.

I 1 Id I1=( 6 )Id

, PWM

120 .

- 90 -

.

(a) (b)

180

. 3

(a) , =60

(b) 120

.

v 1, v2 3 180 (b)

3 , 3

120 , 3 .

.

- 91 -

PWM(Pulse Width Modulation) INVERTERS PWM

dc ,

, /

. .

(PWM) .

- DC AC

- DC AC

-

PWM PWM

(

)

PWM .

3 .

(VFI :

voltage-fed inverter)

(CFI : current- fed inverter) , dc

(variable dc linked inverter) .

,

.

.

.

, , , ,

.

- 92 -

PWM Switching

Harmonics EMI

L, C Filter ( )

- Thyristor : Hz Hz

- GTO : Hz 1 KHz

- Power Transistor : KHz 5 KHz

- Power MosFET : KHz KHz

- IGBT : Hz 20 KHz

, GTO, IGBT

.

.

(a) (b)

PWM

- 93 -

3 PWM

PWM

,

.

(n )

HFn=VnV1

.

V1 , Vn n .

- 94 -

< THD>

(total harmonic distortion) .

THD=1V1 (

n=2,3..Vn

2)1/2

< DF>

THD ,

.

. (distortion factor) 2

.

DF 2

DF=1V1 [

n=2,3..( VnN2 )

2

]1/2

,

DFn=Vn

V1n2 .

< LOH>

(lowest-order harmonic)

, 3% .

PWM rms Harmonics / fsw ( fsw )

Inverter Switching

PWM , , dead time

.

- 95 -

1. (single-pulse-width modulation control)

,

. Ac Ar

.

. Ar 0 Ac , 0 180

.

Ac Ar (modulation index)

.

M=ArAc

V0=[ 22 ( +)/2

( -)/2Vs

2d(t)]1/2

=Vs

- 96 -

M .

3 , .

( 0.78 .)

2. (UPWM : Uniform pulse-width modulation)

- 97 -

.

.

f 0 , fc

p . .

.

p=fc2fo

=mf2

mf=fcfo

.

0 1 M 0 /p

0 Vs .

, .

V0=[ 2p2 ( /p+)/2

(/p-)/2Vs

2d(t)]1/2

= Vsp

3. (SPWM : sinusoidal pulse-width modulation) 3 SPWM V DC

3 (balanced three-phase)

.

3 SPWM

3

.

a, b, c vra, vrb, vrc ma,

- 98 -

fr , vs , fs .

ma (amplitude

modulation index)

ma=

(frequency modulation index) mf

mf= =

f sfr

. ma=0.8, mf=15 3 PWM

.

SPWM 3 (c)

. (d) 5- .

(d) 0

,

(freewheeling) .

SPWM PWM PWM .

PWM fs

f r

.

,

.

PWM

,

.

PWM

,

. PWM

.

- 99 -

0

0.5

-0.5

1

-1

vrcvrbvra

ma

vc

p 2pm a = 0.8 m f = 15(a)

(c)

VDC

Vab = Va - Vb

(d)

Va

p 2p

12 VDC

12 VDC

0

Vb

p 2p

12 VDC

12 VDC

0

(b)

23 VDC

0

013 VDC23 VDC

13 VDC

p 2p

Van

p2p

-VDC

wt

wt

wt

wt

wt

3 SPWM

- 100 -

. .

f c

.

f r fo ,

Ar M Vo .

.

.

M 0 1 0 Vs

.

- 101 -

4. (MSPWM : modified sinusoidal pulse-width modulation)

.

SPWM 60 ( , 0

60 120 180 ) .

MSPWM .

- 102 -

(SPWM 15% )

. , .

SPWM M=1 .

5.

(Trapezoidal Modulation)

. Ar

. Ar Ar(max)

.

Ar= A r( max)

, =1 .

M M=ArAc

=A r( max)

Ac for 0M1

Ar(max) Ac , M

.

1.05Vs .

- 103 -

(Staircase Modulation) .

.

. mf

. PWM 15

.

2 15 , 3 21 , 4 27

. 0.94Vs

.

- 104 -

(Stepped Modulation)

.

.

( :20)

. , PWM

.

- 105 -

(Harmonic Injected Modulation)

.

, .

.

.

Vr=1.15sint+0.27sin3t-0.029sin9t

3 9 .

- 106 -

2 /3 .

3n . PWM

PWM

15% . 3 1 (arm)

.

(Delta Modulation , Hysteresis Modulation) , r ,

V . o

c .

.

,

.

1V s Ar

fr .

.

- 107 -

6. (SV-PWM : space vector pulse-width modulation) (SVPWM : Space Vector Pulse Width

Modulation)

. 3 6

, 3 6

2 (Zero Volt) .

On

. , .

(Zero Vector) .

6

6

.

SVPWM

3 6

(V1, V2, V3, V4, V5, V6 )

2 (V0, V7 ) .

23 Vdc 60 .

- 108 -

3

PWM

PWM

.

3 System 2 d-q

.

Vector Space Vector .

:

switching .

DC Link Dead time .

switching .

.

2/3Vdc

T1

T2

Vo (100) V1

( 1 1 0 )

V2

( 0 1 0 )

V3

( 0 1 1 )

V4

(001) V5(101) V6

Vad

qVb

Vc

- 109 -

PWM ,

S1 S3 S5

S2S6S4

Vi

abc

PWM

V1 V2 V3 V4 V5 V6 V7(V0) V8(V0)

S1 1 1 0 0 0 1 1 0

S2 1 1 1 0 0 0 0 1

S3 0 1 1 1 0 0 1 0

S4 0 0 1 1 1 0 0 1

S5 0 0 0 1 1 1 1 0

S6 1 0 0 0 1 1 0 1

Va23 Vi

13 Vi -

13 Vi -

23 Vi -

13 Vi

13 Vi 0 0

Vb -13 Vi

13 Vi

23 Vi

13 Vi -

13 Vi -

23 Vi 0 0

Vc -13 Vi -

23 Vi -

13 Vi

13 Vi

23 Vi

13 Vi 0 0

I

d

qmode3(-+-)

mode2(++-)

mode1(+--)

mode6(+-+)

mode5(--+)

mode4(-++)

mode7,8(+++)(---)

II

IV

V

VI

III

- 110 -

mode 1 mode 6 Vn =23 Vi e

j (n-1) 3 mode 7

mode 8 Vn = 0 . , mode 7 8

. ,

.

mode 1 mode 8

.

mode 1 Va =23 Vi , Vb = -

23 Vi = Vc

.

mode 1 mode 8

.

a(+--)

Uref

b(++-)

g 3__2 Vi

Vi e3__2 j3__p

V01

V02

PWM (CSI : Current Source Inverter)

S1 S3 S5

S2S6S4

I

abc

PWM

- 111 -

.

9 .

mode 1 mode 6 in =23

i ej ( 2n-1)

6 , mode 7

mode 9 in = 0 .

.

I1 I2 I3 I4 I5 I6 I7(I0) I8(I0) I9(I0)

S1 1 0 0 0 0 1 1 0 0

S2 1 1 0 0 0 0 0 0 1

S3 0 1 1 0 0 0 0 1 0

S4 0 0 1 1 0 0 1 0 0

S5 0 0 0 1 1 0 0 0 1

S6 0 0 0 0 1 1 0 1 0

ia I 0 -I -I 0 I 0 0 0

ib 0 I I 0 -I -I 0 0 0

ic -I -I 0 I I 0 0 0 0

I

q

d

I1

I2

I3

I4

I5

I6

ia

ic

ib

iref

I2

gi01

i02

I1

- 112 -

PWM SVPWM

PWM SVPWM

SVPWM 5 3.2%, 7 2.6%, 9

1.37% PWM 5 66.6%, 9

28.5% .

- 113 -

DC (chopper)

1. , dc dc

. dc dc dc ,

dc-dc .

dc

.

, ,

.

, , .

dc

,

.

2. . SW t1

(on) , Vs . t2 (off) , 0 .

BJT, MOSFET, GTO,

. 0.5 2[V]

.

- 114 -

.

Va=1T

t1

0v0dt=

t1T Vs

=ft1Vs=kVs

, Ia=VaR

=kVsR

. T

, k=t1T

, f . k t1, T

f 0 1 . , V0 k 0 Vs ,

. 92 99% .

- : T ,

t1 . , ,

(PWM) .

- : f . t 1 t2 . ,

.

.

3. RL RL .

. 1 ,

. 2 ,

Dm .

RL

- 115 -

4.

- 116 -

dc ,

. SW t1 ,

, . t2

, D1 ,

.

CL ,

.

5. dc dc dc

.

,

BJT, MOSFET, IGBT . DC

, LC

.

4 .

buck

boost

- 117 -

buck-boost

cuk

buck buck Va Vs .

. . 1

Q1 t=0 . ,

L, C, R . 2

Q1 t=t1 . Dm

L, C Dm

. Q1

.

buck

90% . di/dt L

. ,

. buck

.

- 118 -

boost boost .

. 1 Q1 t=0 .

L Q1 . 2

Q1 t=t1 .

L, C Dm .

Q1 . L

.

boost .

boost .

.

k .

(1-k)

, buck

.

- 119 -

iL boost

buck-boost

buck-boost

. .

. 1 Q1 Dm

. , L Q1 .

2 Q1 L L, C, Dm

. L ,

Q1 .

di/dt Vs/L di/dt L .

- 120 -

Q1

.

iL buck-boost

cuk

cuk buck-boost

.

, Q1 Dm

, C1 L1 , Dm, Vs .

. 1 Q1 t=0

L1 .

C1 Dm Dm

- 121 -

. C1 C1, C2 L2

. 2 Q1 t=t1 .

C1 L2

. Dm Q1

.

cuk

. .

Q1 cuk L1 L2 .

Q1 .

C1 .

.

- 122 -

cuk

.

ac

1. DC

AC-DC

.

, . 2 (DC-AC AC-DC) .

AC 3 (AC-DC, DC-AC, AC-DC) .

DC-AC PWM .

dc PWM

, , , . PWM

DC

. DC

.

Q1 ,

2 1 .

Voc=2Vs. Is ,

k=50% Ip=Is/k=2Is .

. Q1 , C1 R1

. , 500W .

, - .

(b) ,

, .

(c) Q1 , Vs 1 2 1

. Q2 Vs 2 1 . 1

-Vs Vs . Q1 Q2 50%

- 123 -

.

DC

dc

dc , .

, .

dc .

.

- 124 -

dc

. V0, Vs (a=Ns/Np ) .

V0aVs

, .

, .

dc

- 125 -

2. ac

ac , ac

.

(UPS : Uninterruptible Power Supply) . (a)

ac ,

. ,

.

4 5ms .

.

(b) ,

.

.

. ,

, .

.

- .

UPS

- 126 -

UPS

. .

, .

.

.

UPS

dc ac .

ac

dc

. .

dc

PWM . .

ac

- 127 -

ac

ac

, PWM

.

ac

ac

. ac

ac . .

ac