Post on 07-May-2018
Latest Results from the SEMATECH Berkeley Actinic Inspection Tool
Kenneth A. Goldberga, Iacopo Mochia, David Chanb, Hyuk Joo Kwonb
aLawrence Berkeley National Laboratory bSEMATECH
Beyond the AIT: the SHARP microscope
2010 – 2011
AIT upgrades
New experimental results
KAGoldberg@lbl.gov, EIPBN 2010
Goldberg, SPIE 7122, (2008)
λ: 13.2–13.6 nm
NA (4x): 0.25–0.35, 6°
Mag: ~900x
The SEMATECH Berkeley Actinic Inspection Tool (AIT)
Pre-2011 zoneplate array with Si3N4 membrane
0.35 1000x
0.35 907x
0.30 907x
0.25 907x
0.25 NA 680x mag
Au absorber
Si3N4
visible-light microscope image
2011: Improved AIT zoneplate array
SEM Micrograph
open windows
20-µm support
0.25 907x
0.25 907x
0.32 907x
0.35 NA 907x mag
200 μm
Au absorber
0.35 907x
alignment
Mask images improve the reticle navigation
SEMATECH Berkeley Actinic Inspection Tool (AIT) • February 2011
Mask Performance Evaluation
Mask: MET10 / Wallow, et al., unpublished 2011
500 nm
28 nm
32 nm
22 nm
24 nm
ThroughFocus© Software N
ILS
focus
CD
[n
m]
Inte
nsi
ty
detail
Defect Repair Studies
500 nm
Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011
16-09 / G4 / Site 8 / Site Loc 17
Defect Repair Studies
500 nm
Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011
16-09 / G4 / Site 3 / Site Loc 11
Defect Repair Studies
500 nm
Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011
16-09 / G4 / Site 7 / Site Loc 12
Defect Repair Studies
500 nm
Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011
16-09 / G4 / Site 2 / Site Loc 6
Mask: SMOCOL2 / Gallagher, Badger, unpublished 2011 Defect A3-B30
500 nm SEM AIT (EUV)
Programmed Pattern Defects
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
500 nm
Native Defect Studies
Focu
s
Phase Defect Studies
• bump • pit
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series… – + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
Phase Defect Studies
Mask: AGC1008005 Kwon, et al., unpublished 2011
through focus series…
• bump • pit
– + Δ = 50 nm
TEM AIT
50 nm
Focu
s
1.5 μm
PIT
PIT
1.5 μm 50 nm
TEM AIT
Focu
s
BUMP
1.5 μm
TEM
50 nm
AIT
Focu
s
Mask: APSM Yan, et al., SPIE 2011
Phase layer Substrate
Patterned phase layer
Side view
Mask top view
Thicker
Substrate
Phase Structure Studies
Mask: APSM Yan, et al., unpublished 2011
Phase Structure Studies
The AIT
The AIT is over 6 years old.
That’s 65 in litho years. Photo: Stefan Tell
14+ years of actinic mask inspection/imaging
Exitech U. Bielefeld MIRAI II/Selete MIRAI Fraunhofer Institute
Review: Goldberg, JVST B 28 (6), C6E1-10 (2010)
2014 Zeiss INVENT/CNSE Colorado State U. Hyogo Hanyang SEMATECH/LBNL
Lucent EUV LLC/LBNL NTT U. Hyogo SEMATECH/LBNL
SEMATECH/ LBNL 2012
♯
♯
SHARP concept drawing
At σ ≈ 0.2, AIT sees ≥ 16 nm dense lines
50%
4×NA:
Calculations: K. Goldberg
At σ = 0.8, SHARP will see > 6 nm
4×NA:
dense lines
50%
Calculations: K. Goldberg
Synchrotron Source • bending magnet • variable bandwidth, λ/Δλ • narrow divergence angles
Coherence control
Uniformity control
Variable NA, Incidence angle,
and Azimuth angle
3 fewer mirrors than AIT
Fourier-Synthesis Illuminator
condenser
mask
pupil
angle-scanner
angle-scanner
Fourier-Synthesis Illuminator
condenser
mask
pupil
Fourier-Synthesis Illuminator
mask
pupil
angle-scanner
~25 µm
10:1 demag ellipsoidal condenser 6–10° σ ≤ 0.9
Fourier-Synthesis Illuminator
condenser
mask
pupil
angle-scanner
coherence control
condenser
mask
pupil
angle-scanner
Fourier-Synthesis Illuminator
coherence control
condenser
mask
pupil
angle-scanner
Fourier-Synthesis Illuminator
coherence control
condenser
angle-scanner
mask
pupil
Fourier-Synthesis Illuminator
coherence control
condenser
angle-scanner
mask
pupil
Fourier-Synthesis Illuminator
adjustable azimuth ±25°
condenser
angle-scanner
mask
pupil
Fourier-Synthesis Illuminator
condenser
angle-scanner
mask
pupil
Fourier-Synthesis Illuminator
adjustable azimuth ±25°
adjustable azimuth ±25°
condenser
angle-scanner
mask
pupil
Fourier-Synthesis Illuminator
condenser
angle-scanner
mask adjustable azimuth ±25°
pupil
Fourier-Synthesis Illuminator
mask
CCD
pupil-fill monitor
visible-light microscope
zoneplates
Imaging System
mag = 250–1800× (up to ~8000×)
1st
0th
AIT > 16 nm
low σ
6° fixed
SHARP > 6 nm σ ≤ 0.9
6–10°
The AIT team
Iacopo Mochi James Macdougall Nathan Smith Seno Rekawa Ken Goldberg Project Scientist Graduate Student Engineering Associate Chief Engineer Principal Investigator
This work was supported by SEMATECH, through the U.S. Department of Energy under
Contract No. DE-AC02-05CH11231.
Harry Kwon David Chan Bryan Rice Stefan Wurm Project Manager Mask Strategy Sr. Director of Director of for AIT SHARP Leader Strategic Initiatives Lithography