Report - Chapter 10 化學氣相沉積與介電質薄膜 CVD應用 薄膜 源材料 Si (多晶) SiH 4 (矽烷) 半導體 SiCl 2H 2 (二氯矽烷；DCS) Si (磊晶) SiCl 3H (三氯矽烷；TCS)

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