Wafer-level Heteointegration Technology and its...
Transcript of Wafer-level Heteointegration Technology and its...
Wafer-level HeteointegrationTechnology and its Applications
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Shuji TanakaProfessor, Department of Bioengineering and Robotics
Director, Micro/Nano Machining Research & Education CenterProfessor, Microsystem Integration Center
Tohoku UniversitySendai, Japan
mems tohoku
魯迅 Lǔ Xùn Studied in Tohoku University
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Novel 「藤野先生」
This novel is based on Lǔ Xùn’s experiencein School of Medicine, Tohoku University
Lecture room 階段教室, where Lǔ Xùn’ studied, in Katahira Campus
魯迅像
藤野厳九郎像
(former 仙台医学専門学校) in 1904 ~ 1906. 藤野 厳九郎 教授 Prof. Fujino was Lǔ Xùn’ssupervisor.
Lǔ Xùn’s notebook先生 in Japanese老師 in Chinese
MEMS Facilities in Aobayama Campus
3 S. Tanaka Laboratory CleanroomMicrosystem Integration Center
New campus
Subway station(under construction)
Aobayama Campus
Micro/Nano-Machining Research and Education Center (MNC)
Hetero-Integration
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MEM device
Integrated circuit
Functional material
Si
Ferroelectric/Piezoelectric materialse.g. LiNbO3
Li
Nb
O
Frequency controlOptical modulationParametric oscillationDetectionActuation
ProcessingAmplificationMemoryDetection
Tactile Sensation on Whole Robot Body
5 “Paro”, Intelligent Systems
“RIBA”, Riken
Care robot
Pet robot
Tactile sensor network for home and medical robots enables:
• Contact detection for collision safety• Body contact communication
How to imitate or replace nerve network?
I. Kumagai et al., IEEE/RSJ’12 (2012)
Robot skin
Parallel connection between brain and 107 of tactile receptors
Bus-conenctedtactile sensor
Tactile Sensor Network on Robot
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MEMS-on-CMOS Integrated Tactile Sensor
M. Makihata, S. Tanaka et al., Sensors & Actuators A (2012)M. Makihata et al., 2012 MRS Spring Meeting
MEMS-CMOS interconnection
Capacitive sensing electrode
Thinned CMOS wafer
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BCB polymer
Through-silicon groove
I/O pad
1 mm
2.4×2.4×0.3 mm2
Through Silicon Groove (TSG)
M. Makihata, S. Tanaka et al., Sensors & Actuators A (2012)Trapezoidal blade
IO pad
Grooving Insulation & wiring
Polymer filling & planarization
Wafer bonding
Back-grinding & dry etching
Redistribution wire
Contact hole
LSI pad
LSI BEOL layer
Tapered groove
Bottom of tapered groove
TSG backside contact
BCB MEMS sensor
LSI wafer
SiO2
LSI
BCBAu
MEMS
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M. Makihata, S. Tanaka et al., Sens. Actuators A, 188 (2012) 103-110
Through Silicon Groove formed on ASIC
Data from Integrated Tactile Sensor
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M. Makihata, M. Muroyama, S. Tanaka et al., 2012 MRS Spring Meeting
1 mm
Integration for Multiband Wireless Front-End
LNA 0/90 ºA/D
A/D
Digital signalprocessor
FilterMixer
Discrete devicesIntegrated devices based on RF CMOS technology
Frequency tuning device
• Integration of acoustic filters andtiming resonators on RF-CMOS
• Integration of many front-end filters formultiband wireless systems
• Frequency tunability enabled byMEMS (e.g. variable capacitor)
Rx
Electro-mechanical components
MEMS-enabled function
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Electrostatic vs. Piezoelectric ActuationG. Klaasse, R. Puers (KU Leuven), H. A. C. Tilmans (IMEC), SeSens Proc. (2002)
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Pull-in voltage Touch-down voltage (δ = d0)
Al cantilever:E = 70 GPa, h = 1 μm, l = 100 μm, d0 = 3 μm→ VPI = 25 V
Al/AlN/Al cantilever:AlN E = 320 GPa, d31 = 3.125 pC/N, h= 0.1/0.8/0.1 μm, l = 100 μm, d0 = 3 μm→ Vp = 18.5 VCu/Pt/PZT/Pt cantilever:PZT E = 70 GPa, d31 = 90 pC/N→ Vp = 2.4 V
PZT-Actuated MEMS Switch on CMOS
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A
C
A B
GND RF I/O GND
Contact
Bias electrode
LSIAl pad
C
BAuPZT
Cu SiO2
Pt
0
1
2
3
4
5
6
7
0 2 4 6 8 10D
efle
ctio
n [μ
m]
Voltage [V]Driving voltage (V)
Def
lect
ion
(μm
)
Matsuo, Moriyama, Esashi, Tanaka (Tohoku Univ.), IEEE MEMS 2012
PZTPtAu
PZT-Actuated MEMS Switch on CMOSMatsuo, Moriyama, Esashi, Tanaka (Tohoku Univ.), IEEE MEMS 2012
Signal line
A-1. Fabrication of PZT MEMS structure
PolymerA-2. Polymer spin-coating
PZTPt drive electrode
Si wafer
Si wafer
Au
PolymerB-2. Polymer spin-coating
B-1. Fabrication of electrodes and pads on IC
Au
IC wafer
IC wafer13
Tunable BST Varactor on CMOS Power Amp
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0
0.1
0.2
0.3
0 0.5 1 1.5 2Frequency (GHz)
Adm
ittan
ce (S
) Bias 0 V Bias 8 VTransferred BST varactor
Au electroplated inductor
Au electroplated inductor Transferred BST varactorBCB bonding polymer
0.18 μm CMOS power amplifier (Kyushu Univ.)
Bio-Electrochem LSI with Diamond Electrode
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Transferred B-doped diamond film(Working electrode)
PDMS flamePDMS potting
Au wire
LSI
BCB bonding polymer
LSI pad
Diamond electrode
Au inter-connection
T. Hayasaka, S. Yoshida … S. Tanaka, IEEE MEMS 2014, pp. 322-325
Electrochemical Biosensor Array
Bio-LSI chip
Multi-project wafer LSI chip Electrode array Electrode
250 μm
Electrochemical bio-activity sensing
Subred SubOX O2CO2
Enzyme kinetics analysis
Cell respiration activity
Immunoassay for diagnostics
Cell-based assay for environmental monitoring16 Collaboration with Prof. Matsue, Tohoku University
Wafer-Bonding-Based Integration: Problems
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MEMS gyroscope
ASIC
Steven Nasiri and Martin Lim,InvenSense, Inc.
VacuumAlGe eutectic boding
Market share > 20 %for 3-axis gyros in mobiles (2011)
Difference in die sizeMEMS
ASIC
Vacuumor N2
Metal seal
Interconnect
Combo Sensors
18 Photographs: Romain Fraux (System Plus Consulting)
STMicroelectronicsLSM9DS0 (4×4 mm2)5 dies- Accelerometer- Gyroscope- Magnetometer- 2 ASIC
BoschBMX055 (3×4.5 mm2)5 dies- Accelerometer- Gyroscope- Magnetometer- 2 ASIC
InvenSenseMPU-9250 (3×3 mm2)2 dies- Integrated 6-axis
inertia sensor- Magnetometer
Combo sensor:3-axis accelerometer3-axis gyroscope3-axis magnetometer (e-compass)
System in Package(SIP)
Selective and Multiple Die Transfer
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Glass support waferMEMS
ASIC
(1) Wafer bonding
(2) Laser irradiation THG Nd:YVO4 laser (λ = 355 nm)
Polymer
(3) Selective die transfer Reusable Reusable
180⁰C
FBAR and Sustaining Amplifier IC
20S. Taniguchi et al. (Taiyo Yuden),IEEE Ultrasonics Symposium 2007
VDD
FBAR(2 GHz)
Bias circuit
Outputbuffer
VSS
Sustaining Amplifier IC
FBAR
1 mm
2 mmAu seal ring (fly-cut)
Interconnectbump (fly-cut)
Designed and fabricated byAsahi Kasei Microelectronics
Selective and Multiple Die Transfer
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FBAR (1×1 mm2) ASIC (2×2 mm2)
Multi-project LSI wafer (Shot size 20×20 mm2)
Our ASIC(2×2 mm2×4 dies)Asahi Kasei Electronicsor Kyushu University
FBAR (1×1 mm2)Taiyo Yuden
FBAR(Dummy for bonding)
4 times of die transfer were demonstrated using the same MEMS wafer.
K. Hikichi … S. Tanaka, IEEJ Sensor Symposium 2013
Integrated/Packaged 2 GHz FBAR Oscillator
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-160
-140
-120
-100
-80
-60
-40
-20
-180
Phas
e no
ise
(dBc
/Hz)
Carrier 1.9624 GHz
100 1k 10k 100k 1M 10M Offset (Hz)
LiNbO3 on IC One-Chip SAW OscillatorS. Tanaka (Tohoku Univ.) et al., IEEE Trans. Ultrason. Ferroelectr. Freq. Contr., 59, 8 (2012)
Integrated SAW oscillator500 µm
LSISAW resonatoron 128 Y LN
Au bump23
Phase Noise of One-Chip SAW Oscillator
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Δf −1
Δf −3
Δf 0f0/(2Q) ≈ 200 kHzQ ≈ 1250
502.5 MHz
-110
-120
-130
-140
-150
-160
-170
10 kHz 100 kHz 1 MHzFrequency offset
dBc/Hz
TV White Space Cognitive Radio
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40 ch × BW 6 MHz= 240 MHz
Ch.13
Sendai
470 MHz 770 MHz
Ch.62
NH
K
NH
K
(E)
TBC
仙台
ミヤギ
東日
本
Ishinomaki
710 MHz
DigitalTV band
2013
.12
2012
.12
Mon
thly
ave
rage
traf
fic (G
bps)
×2.2/year
2013
.9
2013
.6
2013
.3
2012
.9
2012
.6TV white space
TV white space cognitive radiocommunication (IEEE 801.11af)
Monthly average traffic of mobilecommunication in Japan
Design of Tunable SAW Filter (Chiba Univ.)
260.980.98 0.98 0.98 0.98
0
10
20
30
40
Frequency (GHz)
Inse
rtion
loss
(dB)
Y: SAW resonatorC: Varactor
10 SAW resonators and 10 varactors integrated on 42º Y LiTaO3
A B C’ CCp1 Small Large
Cp2 Large Small
Cs1 Small Large
Cs2 Large Small
Relationship between capacitance and bandwidth
Simulation
M. Inaba, T. Ohmori, K. Hashimoto (Chiba Univ.), Jpn. J. Appl. Phys., 52 (2013) 07HD05
tan δ
Nor
mal
ized
ε
1
3
5
7
0Applied voltage
εtan δ
Hetero-Integration of BST Varactor
(Ba1−xSrx)TiO3
(Murata Mfg.)
SAW resonator
BST varactor
Al
BSTPt
AuAu
Pl Pl
42º Y LiTaO3
Pt
Sapphire sub.
Pt-Au bonding
AuBST
LT sub.
IDT AuLT sub. LT sub.
Si Sub.
LT sub.
Pt
BST is deposited at 600ºC or higher.
Sapphire wafer removal27
BST varactor
Laser
Laserpre-irradiation
Transferred BST on LT SAW Wafer
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Au
BST
SAW
reso
nato
r
LiTaO3
4 mm × 4 mm
Bandpass Characteristic and Application
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CS1, CP1: 0 V, CS2, CP2: 7 V
CS1, CP1: 7 V, CS2, CP2: 0 V
1.041.021.000.980.96Frequency (GHz)
0
-10
-20
-30
-40
-50
Inse
rtio
n lo
ss (d
B)
Tunable SAW filter inside
Antenna port
Rx Tx
Tunable SAW filter
DA converter
TV white band cognitive WiFisystem using tunable filter (NICT)
Summary
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1. Devices are always getting smaller and more functional,and wafer-level heterointegration technology is a powerfulmethod beyond SiP (System in Package) approach.
2. A network tactile sensor for human-friendly robots wasconstructed by the wafer-level adhesive bonding of acapacitive force sensor and a LSI.
3. Functional thin films (PZT, diamond etc.), which are notcompatible with CMOS, were transferred from Si wafers toLSI wafers, and integrated devices were prototyped.
4. A one-chip tunable filter for TV white space cognitivewireless LAN was made by the monolithic integration ofSAW resonators and BST varactors. The BST thin film wastransferred from a sapphire wafer to a LiTaO3 wafer bylaser-assisted debonding technology.
S. Tanaka Laboratory Members
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特任教授⾨⽥ 道雄
教 授⽥中 秀治
准教授(μSIC)室⼭ 真徳
助 教塚本 貴城
助教(μSIC)平野 栄樹
助教(WPI-AIMR)吉⽥ 慎哉
Project Prof.Michio Kadota
ProfessorShuji Tanaka
Associate Prof.Masanori Muroyama
Assistant Prof.Takashiro Tsukamoto
Assistant Prof.Hideki Hirano
Assistant Prof.Shinya Yoshida
Professor 6Staff 6PhD course student 9Master course student 6Undergraduate 7Research student 2Visiting researcher 3
In total 42
Collaborators 5+(Microsystems Integration Center)
Please visit S. Tanaka Laboratory websiteat http://www.mems.mech.tohoku.ac.jp/index_e.html
mems tohoku