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Plasma Improvement Project
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Transcript of Plasma Improvement Project
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LCR MANUFACTURING TECH. GROUP
MLCC Mooning Defect Elimination Through Plasma Surface Treatment
Prepared by: Loraine JimenezTermination-Term-Firing Technical EngineerMarch 24, 2013
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LCR MANUFACTURING TECH. GROUP
Background
Mooning improvement
Conclusion and future plan ( p18 ~ p19 )
Opinion ( p20 )
What is Plasma? (physical chemistry) a fourth state of matter distinct from solid or liquid or gas and present in stars and fusion reactors; a gas becomes a plasma when it is heated until the atoms lose all their electrons, leaving a highly electrified collection of nuclei and free electronsStates of Matter
1. Solid2. Liquid3. Gas4. Plasma
Examples of Plasma 1. Flame 2. Lightning 3. Emission from stars, sun, Etc.
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LCR MANUFACTURING TECH. GROUP
Background
Mooning improvement
• Definition of Terms
Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length
Conclusion and future plan ( p18 ~ p19 )
Opinion ( p20 )
Plasma treatment is started the time 0603 models was absorbed at SEMPHIL because the said model, due to its small dimension, is hard obtain optimum termination dipping parameter. Termination Chipsize is a very important MLCC characteristic because this will determine shape of the external electrode of our chips.
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LCR MANUFACTURING TECH. GROUP
Background
Mooning improvement
• Definition of Terms
Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length
Conclusion and future plan ( p18 ~ p19 )
Opinion ( p20 )
L2-L
Copper thickness at the top sur-face part of the chip
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LCR MANUFACTURING TECH. GROUP
Background
Mooning improvement
• Definition of Terms
Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length
Conclusion and future plan ( p18 ~ p19 )
T2-T
Copper thickness at the side sur-face part of the chip
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LCR MANUFACTURING TECH. GROUP
Background
Mooning improvement
• Definition of Terms
Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length
Conclusion and future plan ( p18 ~ p19 )
Band-width
Mooning Length
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LCR MANUFACTURING TECH. GROUP
Mooning improvement
Conclusion and future plan ( p18 ~ p19 )
Mooning Mechanism
Mooning Defect’s main contributor is foreign matter from the surface of the chip. foreign matters’ force of attraction makes the copper paste to climb up the chips. Ex. Oxidized Layer, dust, Etc..
Plasma surface treatment on the MLCC surface → Prevents the spread of external electrode on the surface by removing the foreign matter on the chip’s surface and giving it a hydrophobic property.
Mooning Defect Improvement through plasma treat-ment
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LCR MANUFACTURING TECH. GROUP
Mooning improvement
Mooning Defect Improvement through plasma treat-ment
Plasma Treatment’s Goal 1. Clean the chip’s surface, removing foreign matter that came from the environment. 2. Make the chip’s surface Hydropobic.
Target Model: • 0603 – prone to Mooning Defect due to small chip dimension.• 05A106 – smallest UHL model to protect and improve visual ap-
pearance by preventing the occurrence of Mooning Defect.
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LCR MANUFACTURING TECH. GROUP
Mooning improvement
Conclusion and future plan ( p18 ~ p19 )
Mooning Defect Improvement through plasma treat-ment
Argon Gas (Sputter Effect) – To emit Argon molecules with high pressure to remove foreign materials
“Mooning Defect’s main contributor is foreign matter.”
Solution: 1 )Clean the chip’s surface, removing foreign matter that came from the envi-ronment.
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LCR MANUFACTURING TECH. GROUP
Mooning improvement
Solution 2:“Plasma surface treatment on the MLCC surface → Make the chip’s surface Hy-dropobic.”
Mooning Defect Improvement through plasma treat-ment
Normal chip surface
Hydrophobic surface
C3F6 Gas (Hydrophobic Property) – To emit C3F6 molecules that aids to form a surface that has resis-tance to liquid
Hydrophobic surface makes it hard for the copper paste to travel further on the ceramic body of chips.
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LCR MANUFACTURING TECH. GROUP
Vacuum chamber
Mooning Defect Improvement through plasma treat-ment
RF Power
Reacting Gas (Ar, C3F6)
Pump ex-haust line
Sample
Vacuum
Emission of reacting
gasArgon
(cleaning)
Apply RF power
(13.56MHz)
VentEmission of reacting gasC3F6 (Hydo-
phobic surface)
Apply RF power
(13.56MHz)
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LCR MANUFACTURING TECH. GROUP
When plasma time is too long, Termination top peeled
off occurs.
Over Exposure OK Exposure
Mooning Defect Improvement through plasma treat-ment
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LCR MANUFACTURING TECH. GROUP 13
외관
불량
률 (
%)
Improvement effect : Reduced visual defect rate
Reduced visual defect rate after hydrophobic plasma treatment!
Model : 03A105
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LCR MANUFACTURING TECH. GROUP
Improvement Effect : Mounting Strength improvement
Even though plasma treatment sample has low Bandwidth, mount-ing strength increased from 616g 746g!
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LCR MANUFACTURING TECH. GROUP
Conclusion
Mooning Improvement effectMounting strength im-provement(ASE 向 customer re-quest )
MLCC Visual Im-provement
strong & look good SAMSUNG MLCC !!
Customer Satisfaction
Term Visual Yield