基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. ·...
Transcript of 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. ·...
![Page 2: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/2.jpg)
Agenda
• Appearance Review• Test Result Review• Key Waveform• Controller Selection• Layout notes• GaN vs. Si (CoolMOS)
2
![Page 3: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/3.jpg)
3
150W/19V adaptor
尺寸 Dimensions 103 x 55 x 17 mm
96.3 cc
功率密度 Power Density(uncased) 1.56 W/cc
25.6 W/in3
效率
Efficiency (full load)230 VAC 95.2 %
115 VAC 94.5 %
Efficiency (4–pt. ave.)230 VAC 95.5 %
115 VAC 93.9 %
![Page 4: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/4.jpg)
4
40% Size ReductionHP 65W Adaptor
HP 65W Adaptor
![Page 5: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/5.jpg)
5
High Power-Density PCBA (96 cc)= 103 x 55 x 17mm
小米8
HP mouse
![Page 6: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/6.jpg)
6
High Efficiency >93.5% @ 90 VAC,Full Load
> 95%
![Page 7: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/7.jpg)
150W Thermal• Test condition: Ambient Temp: 30 degree C ;• full load Io=7.8A
7
![Page 8: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/8.jpg)
150W Thermal• Test condition: Ambient Temp: 30 degree C ;• full load Io=7.8A
8
![Page 9: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/9.jpg)
150W Thermal• Test condition: Ambient Temp: 30 degree C ;• full load Io=7.8A
Test Conditions Bridge PFC
GANLLC GAN
PFC diode Inductor Transformer Resonant
InductorBUS
E-CAPSecondray
E-CAPSR
MOS
Vin=90Vac 117 84 85 86 92 88 79 76 65 90
9
![Page 10: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/10.jpg)
150W EMC
• High Line
10
![Page 11: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/11.jpg)
Key Waveform,PFC
1:PFC DRIVER 2:PFC MOS VDS 3:PFC IL 4:VOLTAGE AFTER BRIDGE11
![Page 12: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/12.jpg)
Key Waveform, LLC
1:LLC SW 2:VTP 3:IR 4:DRIVER 12
![Page 13: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/13.jpg)
Key Waveform, LLC
1:LLC SW 2:VTP 3:IR 4:DRIVER 13
![Page 14: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/14.jpg)
Key Waveform, SR
1:H-DRIVER 2:LOW-DRIVER 3:I 4:VDS 14
![Page 15: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/15.jpg)
Key Waveform, Ripple
1:VO15
![Page 16: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/16.jpg)
Key Waveform, Standby
1:VCC 2:VBUS 3:VC16
![Page 17: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/17.jpg)
Key Waveform, SCP
1:LLC DRIVER 2:IO17
![Page 18: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/18.jpg)
18
• 2 PCBs
AC Bridge
Main board
Easy-to-Build
![Page 19: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/19.jpg)
Schematic Architecture
19
![Page 20: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/20.jpg)
ON Semi PFC/LLC/SR Chip Set
20
NCP43080NCP13992ABNCP1615C
ACIN ISOLATION
PFC LLC SR
![Page 21: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/21.jpg)
Boost PFC Circuit
21
SwitchConduction
![Page 22: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/22.jpg)
Boost PFC Circuit Modes
22ton toff ton
t
IL
VD
t
ton toff ton
t
IL
VD
t
CrCM (BCM) Mode DCM Mode
ZVS/ZCS turn-on
valleyturn-on
![Page 23: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/23.jpg)
PFC: FSW(MIN) = 200 kHz
23
![Page 24: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/24.jpg)
NCP1615 NCP1616
24
![Page 25: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/25.jpg)
Layout Guideline
25
• When the FET is turned off, the current transferred into the diode instantly, which creates huge di/dt, so the loop must be minimized.
![Page 26: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/26.jpg)
Layout Guideline
26
• When the FET is turned off, the current transferred into the diode instantly, which creates huge di/dt, so the loop must be minimized.
![Page 27: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/27.jpg)
Layout Guideline
27
High-side GaN
Low-side GaN
Should have no any overlap between high-side node and low-side node.
![Page 28: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/28.jpg)
Layout Guideline
28
Minimum power loop is important for efficiency
![Page 29: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/29.jpg)
NV6115/7 (650V GaNFast™ Power IC)
29
Features
Fig 1. Boost application diagram
![Page 30: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/30.jpg)
NV6115 (Connection, Components)
30
SYM DESCRIPTION TYP UNITS
CVCC VCC supply filter capacitor 0.1 µF
CVDD VDD supply capacitors 0.01 µF
RVDDGate drive turn-on current setresistor
25(range 10 to 400)
Ω
RPWM PWM filter resistor 100 Ω
CPWM PWM filter capacitor 100 pF
SYM DESCRIPTION PART NO. SUPPLIER TYP UNITS
DZVDD set Zener diode
(DZ pin)
BZT52B6V2 RHGTaiwan Semiconductor
Corporation
6.2 V
MM3Z6V2ST1G ON-SemiconductorPDZ6.2B.115 Nexperia (NXP)
PLVA662A.215 Nexperia (NXP)
LM3Z6V2T1 Leshan Radio Company
Table I. Recommended component values (typical only).
Table II. Qualified Zener diode components to be used with this GaN Power IC.
CVCC
RVDDCVDD
DZ
Fig 1. GaN Power IC connection diagram
RPWM
CPWM
![Page 31: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/31.jpg)
NV6115 (Timing Diagram)
31
CVCC
RVDDCVDD
DZ
Fig 1. GaN Power IC connection diagram
RPWM
CPWM
CONTROLLER UVLO+(> 10V !) CONTROLLER UVLO-Drain
Switched Node
Fig 2. Normal operating mode timing diagram
![Page 32: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/32.jpg)
NV6115 (Turn-on Slew Rate Control)
32
CVCC
RVDDCVDD
DZ
Fig 1. GaN Power IC connection diagram
RPWM
CPWM
DrainSwitched Node
Fig 2. Turn-on Slew rate control timing diagram
![Page 33: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/33.jpg)
NV6115 (PCB Layout)
33
CVCC
RVDDCVDD
DZ
RPWM
CPWM
![Page 34: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/34.jpg)
NV6115 (Parallel Configuration)See datasheet for details and conditions
34
![Page 35: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/35.jpg)
Powertrain GaN vs. Si
35
IPD60R180P7NV6117
![Page 36: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/36.jpg)
PFC Waveform Comparison
36
Test condition: Input: 90 VAC, Output Voltage: 19.5V, Output Current 7.69 A
Green: VdsBlue: IdYellow: Voltage after the bridge
Zoom In
Green: VdsBlue: Id
![Page 37: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/37.jpg)
PFC Waveform Comparison
37
Test condition: Input: 90 VAC, Output Voltage: 19.5 V, Output Current 7.69 A
NV611713.65 ns
IPD60R180P724.6 ns
Yellow: VdsBlue: Id
Yellow: VdsBlue: Id
![Page 38: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/38.jpg)
PFC Waveform Comparison
38
Input: 230 VAC, Output Voltage: 19.5 V, Output Current 7.69 A
NV6117 49.8 ns
IPD60R180P765.8 ns
Yellow: VdsBlue: Id
Yellow: VdsBlue: Id
![Page 39: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/39.jpg)
PFC Efficiency: GaN vs. Si
39
Room ambient , Ta=25:
Conclusion: GaN Power IC has much lower COSS, and faster turn-off, for higher efficiency
![Page 40: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/40.jpg)
LLC Waveform Comparison
40
Test condition: Input: 230 VAC, Output Voltage: 19.5 V, Output Current 7.69 A
Green: Vds Blue: Id Green: Vds Blue: Id
Zoom In on next page
Yellow: Low Side Gan VdsBlue: Resonant CurrentRed Low Side Driver
![Page 41: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/41.jpg)
LLC Waveform Comparison
41
Test condition: Input: 230 VAC, Output Voltage: 19.5 V, Output Current 7.69 A
GaN Power IC Si FET paralleled with 100pF added drain-source
Conclusion: For LLC, very big Si COSS result in losing ZVS in high-frequency application
Original (left) waveform uses GaN power IC (COSS = 61 pF)
If a Si FET is used (COSS = 381 pF), the board blows up immediately.To capture a waveform, an extra 100pF was added (drain-source) to the FET.
Losing ZVS
![Page 42: 基于氮化镓IC的150W 高效率高功率密度适配器设计 · 2019. 11. 25. · 基于氮化镓IC. 的. 150W. 高效率高功率密度适配器设计. 150W PFC+LLC using GaNFast](https://reader035.fdocument.pub/reader035/viewer/2022081620/6117a8b32e9e6f206608d4c0/html5/thumbnails/42.jpg)
42