Nanotechnology in NEC FRL

Jun’ichi Sone

Fundamental Research Labs NEC Corporation

Chemistry

Molecular Electronics NEMS

MechanicallyStrong Material

Nanotechnology

Quantum Devices

MolecularEngineering

Atom-

Molecular

Manipulation

Expectation of Nanotechnology

Miniaturization of Semiconductor Devices Molecular Engineering Atom Molecular Manipulation DNA-Protein Manipulation

Expectation of new technology domain and new market

Carbon Nanotube

Fuel Cell

Nanobio Devices

Lifescience

DNA

Protei

n

Manipulatio

n

Sem

icon

duct

or

min

iatu

riza

tion

Electronics

Mechanics

Nanotechnology Vision

2000S D

,f

8nm

S D

,f

8nm

S D

,f

8nm

S D

,f

8nm

Nanotechnology Basic technology

30nm50nm

Nano Material Characterization

3D NanostructureFabrication

Size::1

0nm

5nm

Nano Pattern Fabrication

1nm2010

Fuel Cell

100nm

?§Œä“d‹É

ƒ^ƒ“ƒpƒN?¿DNA

?§Œä“d‹É

ƒ^ƒ“ƒpƒN?¿DNA

TerabitMemory

Quantum bit Devices

QuantumComputer

NanotubeElectron Devices

NEMS Electron Devices

Nano-bio Devices

Next generation lithography

(70～ 100nm)Next generation SOC Devices(70～ 100nm)

Device Physics

Roadmap Technology

Field EmissionDisplay

Sem

icond

uctor

Break

throu

gh D

evices

CNT (carbon nanotube)Interdisciplinary

New Devices

AtomSwitch

3. Pursuing of semiconductorminiaturization limit and

exploring breakthrough devicesNanofabrication technology

Pursuit of miniaturization limit in Si MOSFET operation

Quantum bit devices for Q-computing

YEAR

MP

U g

ate

len

gth

(n

m)

Updated version of ITRS2000

1. Roadmap for Si-LSIs

Gate length reduction to realize higher Performance in MOSFET

Issues

Nanofabrication technology

Quantum Effect Increase of leakage current due to tunneling current

8nm MOSFET demonstration

Leading edge of R & D

1990 2000 2010 202010

100

1990 2000 2010 202010

100

~100nm technology(ASUKA Pj)

Current development phase

The world smallest 10nm pattern using originally developed

high-resolution resist.

Nanofabrication technology

10nm-width resist patternexposed by electron beam

4-methyl-1-acetoxycalixarene

(MC6AOAc)

CH3

OCOCH3

CH2[ ]6

CH3

OCOCH3

CH2[ ]6

I-V characteristics (room temperature) SEM imageof an 8-nm gate region

Exploring miniaturelized Si-MOSFET operation limit

Demonstration of 8-nm-gate MOSFET operation

Ultra-low power device enabling 1-bit operation by a single electron (5~6 orders of magnitude lower energy consumption compared to MOSFETs)

Demonstration of RT operation in single electron devices with islands of sub-10nm

Metallic Single Electron Devices

-4 -2 0 2 4

0.00

0.05

0.10

0.15 V=2 mVT=4.2 K

Dra

in C

urr

en

t (n

A)

Gate Volatage (V)

Schematic view of a single electron device Gate control characteristics

Si substratesource drain

Al/AlOx/Al tunnel junctions

island

Gate

Quantum ComputingQuantum Computing

1

0

0> + 1>

P=12

P=12

1>

0>

Observation

Superposition

Single quantum bit

?

C-ComputingQ-Computing

2N states can be represented by N q-bits (36 billion by N=60)

Operation by keeping wave-function nature (Super parallel)

Issues: Integration, Long life of quantum bit states

Single Cooper-pair BoxSingle Cooper-pair Box

GateGate

SQUIDSQUID

Multi-qubit operation, scaling Increase possible # of elementary gate operation (Q > 103)

The first solid state qubit demonstrated (1999 Nishina Award)

Riken Project funding (starting October, 2001)

The first solid state qubit demonstrated (1999 Nishina Award)

Riken Project funding (starting October, 2001)

Utilizing quantum mechanical principle to revolutionize the

concept of computing

Next steps:

Possible high-speed computing Possible high-speed computing applicationsapplications Decoding (factoring), Date search, NP complete problems (?)

Quantum bit deviceQuantum bit device

1m

Carbon Nanotube(CNT)New Applications

Features of CNT

Applications　Fuel Cell for Mobile Application

Field Emission Display Application

2002 Benjamin Franklin Medal to Dr.S.Iijimafor the discovery of carbon nanotube and the contribution

to the progress of nanotechnology

Benjamin Franklin MedalPhysics Award January 2002

Carbon nanotube

Dr.Sumio Iijima

Features of Carbon nanotubeElectrical properties

Transistor,Wiring,FED

Metal Semiconductor

Metalic or Semiconducting conduction depending on chiralitiesAppearance of Quantum Effect due to 1-d structureHighly-Effective Electron Emission

Chemical:Adsorption, Storage, CatalystsChemical modification, Composites

Fuel cellsSensors

Mechanical:Super strong structure Due to C-C bonds Composite materials

Nanotechnology

ElectronEmission

Flat Panel DisplayMicrowave Tube

Chemistry

Adsorption MaterialSensor, Catalyst

Electronics

Transistor, Sensor,Interconnection,

Quantum bit

Composite Material

Electrical conducting PlasticsReinforced Material

Carbon Nanotube

Energy

Fuel Cell, Gas Storage

Lithium Ion Battery,Super Capacitor

AFM, STMManipulationNanomachine

Application of Carbon Nanotube

SW Carbon Nanohorn aggregates

Single wall carbon nanohorns

Single Wall Carbon Nanohorns

Iijima, S. et al. Chem. Phys. Lett. 309, 165 (1999).

Mobile Fuel Cells using Carbon NanohornsMobile Fuel Cells using Carbon Nanohorns

TEM images of CNHPrinciple of a Fuel Cell

Ultra-High Electrical Energy Capacity 10 times higher than Li battery

Nano-structure suitablefor supporting catalyst

Fuel Cartridge

Cell

Mobile Fuel Cell

CH3OH H+

e

O2CH3OH H+

e

O2CH3OH H+

ee

eeeeeeee

CNH

Pt catalyst

O2

H2O

Fuelair

Polymerfilm

20% increase in output electrical energy by using carbon nanohorn

CO2

Polymer electrolytemembrane

H2 O2

Gas diffusionelectrodes

Comparison of Fuel Cell Output

Nanohorn

Conventional carbon

material

H2/O2 Cell at RT

20% increase of current density by using carbon nanohorn electrodes

0 100 200 3000

200

400

600

800

1000 RT

Furnace black

SWNH

Cel

l vo

ltag

e (m

V)

Current density (mA/cm2)

TEM images of Nanohorn with Pt catalyst

Carbon nanohornConventional carbon material (acetylene black)

※ Black particles : Pt catalyst

・ Finer Pt catalyst is dispersed homogeneously on the surface of carbon nanohorns・ Finer particles have better catalyst capability

Prototype of carbon-nanohorn fuel cell JST, Sansouken, NEC

6. Exploring Interdisciplinary New Devices

Nanobio devices “Fusion of electronics and biotechnolo

gy”NEMS devices “Fusion of electronics and mechanics

Schematics of NEMS nanobio devices

Nanobio devices

High-precision separation : Artificial gel

制御電極

ProteinDNA

Control electrode

DNA

2.75m

Nano wineglass made of Diamond-like-Carbon

Demonstration of three-dimensional nanostructure fabrication

(collaborated with Himeji Inst. Technol. & SII Inc.:Nikkei BP award)

3-D nanostructure fabrication By FIB-CVD

Nanobio devices, NEMS(nano-scale electro-mechanical sysytem),

Electro-mechanical switches

Fabrication of three-dimensionalnanostructures

Focused-ion-beam chemical-vapor-deposition

Nano-coil

2.75m

New market, New industry Nanotechnology

FIB excited chemical reaction(3-dimensional nanostructure)

EB lithography with calix-arene resist(2-dimensional nanopattern)

Beam fabrication

Top down

Bottom upSelf assembled organic membrane

Fine particle DNA

C60

Self assembledChemical reaction

Chemical modification Carbon nanotube(Diameter ~1nm

Smoothness in atomic level)