3.1 .

1.

2. (MOS): -(Metel Oxide Semiconductor Field Effect Tra-nsister)

-TTL(Transistor Transistor Logic) (Emitter Coupled Logic) I2L(Integrated Injection Logic) TTL MOS PMOS( P-channel Metel Oxide Semiconductor) NMOS(N-channel Metel Oxide Semiconductor) CMOS(Complement Metal OxideSemiconductor) CMOS

SSI MSI LSI VLSI 1. SSI (Small Scale Integration ) : 10 (100) 2. MSI (Medium Scale Integration ) : 10 99 (100999) 3. LSI (Large Scale Integration ) : 100 9999 (100099999) 4. VLSI (Very Large Scale Integration) : 10000 (100000)

3.2 MOS

()

3.2.1 () 1. ( UTH ) (0.1V0.5V) UF UTH IF 0 UF = UTH IF UF UTH (0.3V0.7V) IF

2 UR IR IS

R

IRUBR

a(b)(c)

. UF UR

0t1 UFIF UF /R t1 UF URIF IR UR /Rtstt0.1IR( IS) ts tt tre=ts+tt

tre UF PNPN UF URPN P NN PIR IR UR /R ts PN tt IR ISPn

2. PNIF UF/RUFIF

3.2.2 PNPN3 NPN

3. uB 0PNiB IBS() UCC/Rc ,iC = ICS()UCC/Rc1. uB0PNiB0,iC 0,uCE UCC 2. uB0iC =iB

a iC uCE (a)IC UCE b (a)

1 ton ui-U1 +U2td tdiCiC90%tr ton =td + tr 2. toff ui+U2-U1ICSts 0.9ICS0.1ICStf toff =ts + tf tontoff

3.2.3 MOS. MOSMOSuGS NMOS

uGSUTMOSIDS0uDS UDDMOS (b) uGSUTMOSiDS=UDD/(RD + rDS)rDS MOS UDS=UDD rDS /(RD+rDS), rDSRDuDS 0VMOS (c)

. MOS NMOSMOS 1. uiMOSUDDRDCL1 = RDCL 2. uiMOSCLrDS2 rDSCL rDSRD

MOSrDSrCESRDRCMOSMOS MOSCMOS

CMOSCMOS

3.3 TTLCMOS

3.3.1 . (a)(b) UBuiTDQUQ( 3. 2V ) ui3.2VT uO = UCES 0.3Vui0.3V,TuOUQDQuO=2.5V+0.7V=3.2V

1. . IL IL

ILTIC =IRc+IL, IL IC IL IBS ILIb IBSTuO uce IbIBSILmax ILmax TuO(3.2V)ILIRcUQ

2.

Ic 0 IRc= IL + IQuo = 3.2V IRc =(UCC - 3.2V)/Rc ILIQIL IRcIQ 0IL IRc Rcu oIRc ILmax IRc (UCC - 3.2V)/Rc TIL T uo 0.3VIQ= 0, Irc = I L + Ic ILIcILIRc

3.3.2 TTL TTL(Transistor Transistor Logic)-

TTL TTLTTL

. TTL

T1R1 T2R2R3 T3T4T5R4R51. (1) TTL

(2) T1 T2T3T5 T3T4T5 (3.6V)UccR1T1T2T2T2R3 T5 (0.3V) T1ub1=ubc1+ube2+ube5 2.1VT2uc2 = uces2+ube50.3V+0.7V1V,T3T3T4ub4= ue3=uc2-0.7V=0.3V,T4

(0.3V)T1Ub1=0.3V+0.7V=1VT1T2T5T2T5T2T5 T2UCCR2T3T4(3.6V)

2. TTL (2) VOLVoLVOL0.3VVOL0.4V,VSL=0.4V (1) VOH VOHVOH3.6VVOH2.4VVSH=2.4V

(3) VO N VONVSL VONVON1.8VVON (4) VOFF VOFFVSH VOFF VOFF0.8VVOFF

(5) Ni Ni Ni258Ni (7) IiS : IIs IiSIiS1.6mA (6) NoNONo8

(8) IiHIiH IiH50A (9) tpd: tpd () tpdLtpdH tpd = ( tpdL+ tpdH )/2 tpd 10ns 40ns

(10) PICCUCC

PONPOFF PONPOFF

P =(PON + POFF)/2 P50mW,74H22mW

3. TTL TTLTTL74007420 7400 (a)7420 (b) UCCGNDNC

. TTL TTL(OC) (TS) (1) (a)TTL1. TTL

(2) TTL

TTL2474027402

(3) T1T1 TTL

TTL7451

2. (1) (OC) (Open Collector GateOC OCTTL

RLUCC

""

""

(2) (TS) (Three state Gate)TS !

1 n10 n

EN=1G1G2D1 EN=0G2G1D2

3.3.3 CMOS MOSTTL MOS

PPMOS NNMOS PMOSNMOSCMOS CMOSCMOS

. CMOS NMOSTNPMOSTPCMOS UDDTNUTNTPUTP UDDUTN +|UTP|5AUiUTNTNTP UoUDD BUi UTNTN UOCUiUDD /2TNTP UODUiUDD/2UOEUiUDD|UTP|TP TNUO0 Ui=0VTNTPUOUDDUi = UDDTNTPUO0V""

CMOS(W)

.CMOS NMOSPMOSCMOS PMOSNMOS ABTN1TN2TP1TP2F ABTN1 TN2TP1TP2F ""

. CMOS NMOSPMOSCMOSNMOSPMOS ABTN1TN2TP1TP2F AB TN1TN2TP1TP2F ""

x`. CMOS CMOSNMOSTNPMOSTP

. CMOS

MOSMOS

3.3.4 101001 10 01.

.

FABF = AB

3. 4

3.4.1 R-S R-SR-S. R-S 1. (a)(b) R0S1

2.

R-S "d"

RS0R + S = 1 () Q(n+1) QRS

.R-S 1.(a)(b) R=1,S=1 R=1,S=0,0 R=0,S=1,1R=0,S=0

R-S R-SRS

3.4.2

()

()

. R-SR-S(a)b 1. G1G2R-SG3G4

2 R=0, S=0G3G41 R=0, S=1G3G4101 R=1, S=0G3G4010 R=1S=1G3G40 C=0RS1 C=1RS R-S

R-S RS1 "" R-SCRSCRS3 R-SR-S C(C=1)

C1RS R-S R-S

. D R-SRS1R-S(a)D (b) (C=1)DR-SR-S0110

C=0DG3G41 C=1 D=0G41G300D=1G40G311 DD Q(n+1) = D D

DD! ""DD

D (a)(b) (C=0)D(C=1)D

D

D

DD DDD1D2D3

Q(n+1) = D1 D2 D3 D

. J-K R-S1

(2) (C=1)JK J=0,K=0 J=0,K=100 1 0JK =010 J=1,K=00 111 JK =101 J=1,K=101 10 JK =11 (1) (C=0)J-K

J-K J-KJ-K

J-K(a)(b) J-KR-S RDSD01()

() ()() ""

J-KJ-K

J-KJK

. T TJ-KJKTT(a)(b)

T=1 T=0

TT T(a)(b)T

3. 4. 3 TTLJK . 1. IE IE 2. IiL IiL J-KJK01

3. IiH (RDSDJKC)IiH

. 2. (t CPLHt CPHL) 01tCPLH10tCPHL tCPHLtCPLH 3. RDSD(t RLH t RHLt SLH t SHL) 001tRLH10tRHL101t SLH10tSHL 1. fmax fmax