Report - 0 37 S/0.37 mS/ μm I In0.53 GGa0.47 A MOSFET ith …...0 37 S/0.37 mS/μm I In0.53GGa0.47A MOSFET ith 5 h l d As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain

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