7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 1/50
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 2/50
Picosun Oy Proprietary
Picosun
1. Picosun
2. Atomic Layer Deposition
3. ALD in Finland
4. Thin film materials and applications
5. SUNALE™ ALD process tools6. Co-operation partners
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 3/50
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 4/50Picosun Oy Proprietary
Picosun Worldwide
North AmericanHeadquarters
Picosun USA
Detroit, USA
Main Headquarters
Picosun Oy
Tietotie 3, 02150 Espoo, Finland
Factories: Kirkkonummi, Finland
Resales – Spain & Portugal
IZASA S.A.
Alcobendas, Spain
Resales – India
Specialise InstrumentsMarketing Company
Resales – Taiwan
Dual Signaltech
Omega Scientific
Resales – China
Beijing Honoprof
Cross-Tech Development Co., Ltd.
Resales – Japan
Altech Alt Co., Ltd.
Resales – Israel
B.G. Technical Support Ltd.
Resales – Russia
Scientific Equipment Ltd.Resales – France,Germany, UK, Ireland
EURIS
Resales – Italy
Nordtest Srl
Worldwide OEM agreement
Omicron Nanotechnology
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 5/50Picosun Oy Proprietary
Picosun Backgound
Background
Picosun Oy (Ltd) established in 2003
Pioneering ALD experience since 1974
A recognized need for an entry level ALD reactor and straight-forward transitionfrom R&D to production discovered
Mission
High quality R&D and production ALD tools for world wide markets
Stephen Industries Inc Oy is committed to the development of this kind of new
dimension of ALD technologyPresent situation
Picosun Oy manufactures SUNALE™ R- and P-series ALD process tools fornanotechnology applications
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 6/50
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 7/50
Picosun Oy Proprietary
Picosun Board of Directors
Board of Directors Ph.D. Tech. Tuomo Suntola, The inventor of ALD method
Professor, Ph.D Tech. Lauri Niinistö, one of the key persons in developing AtomicLayer Deposition processes and applications in Academia since late 1970s
Professor, Ph.D Jorma Routti, one of the founders of Finnish venture capital andone of Europe's leading technology experts
Picosun CEO, Kustaa Poutiainen
Picosun Managing director, Juhana Kostamo
Picosun CTO, Sven Lindfors
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 8/50
Picosun Oy Proprietary
The Inventor of ALD
The head of SEMI organization President and CEO Stanley T. Myers (left)presents the European SEMI 2004 award to Dr. Tuomo Suntola (right) at
Semicon Europa 2004 exhibition in Munich.
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 9/50
Picosun Oy Proprietary
Atomic Layer Deposition
1. Picosun
2. Atomic Layer Deposition
3. ALD in Finland
4. Thin film materials and applications
5. SUNALE™ ALD process tools
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 10/50
Picosun Oy Proprietary
Deposition Conditions
Deposition temperature
100 °C 200 °C 300 °C 400 °C 500 °C
Typical temperature
Sensitivesubstrates
Processes requiringa lot of activation energy
•Typical deposition pressure is 1 – 10 hPa (mbar)
•Substrate is heated to a selected deposition temperature
•Deposition pressure is adjusted with inert carrier / purge gas (N2 or Ar)
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 11/50
Picosun Oy Proprietary
Introduction of Precursors into
Reaction Chamber
Pulse A Purge Pulse B PurgeStep 1 Step 2 Step 3 Step 4
Precursor A
Precursor BInert gas
Pulsing cycle
Precursor sourcesReaction space Vacuum pump
Inert gas
3
2 4
1
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 12/50
Picosun Oy Proprietary
Step 1: Metal Precursor TMA is
Pulsed to the Reaction Space
OH OH OH OH OH OH
Al
CH3CH3
CH3
Surplustrimethyl aluminum (TMA)molecule
Trimethyl aluminum (CH3)3Al molecules react with the –OH groups on the substrate surface.
Chemisorption
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 13/50
Picosun Oy Proprietary
Step 2: The Reaction Chamber is
Purged with Inert Gas (e.g. N2)
O O
AlAl Al
CH3
C
H
HH
H
Surplus TMA molecules and methane CH4 moleculesreleased from surface reactions leave the reaction space.
O O O O
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 14/50
Picosun Oy Proprietary
Step 3: Non-metal Precursor H2O
is Pulsed to the Reaction Space
Chemisorption
O O O O O O
AlAl Al
CH3
O
H
H
Surplus water molecule
H2O molecules react with the TMA molecule fragmentsattached to the substrate surface.
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 15/50
Picosun Oy Proprietary
Step 4: The Reaction Chamber is
Purged with Inert Gas (e.g. N2)
O O O O O O
AlAl Al
OHOHOHOH
OH OH
Al
C
H
H H
H
Surplus H2O molecules and methane CH4 molecules releasedfrom the surface reactions leave the reaction space.
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 16/50
Picosun Oy Proprietary
Growth of Thin Film by Repeating
a Pulsing Cycle
O O O O O O
AlAl Al
OHOHOHOH
OH OH
Al+ 1 Å / cycle
Pulse A Purge Pulse B Purge
Repeat 1...n times
Heating Cooling
100 cycles 10 nm
(1 nm = 10 Å)
1000 cycles 100 nm
Linear growth
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 17/50
Picosun Oy Proprietary
ALD Film Growth Rate Vs.
Deposition Temperature
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 18/50
Picosun Oy Proprietary
Characteristic ALD
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 19/50
Picosun Oy Proprietary
ALD Precursors
_
Zr
O
C(CH3)3
C(CH3)3
O
4
_
Cl
Zr
Cl
Cl ClZr O
CH3
CH3
CH3H3C CH3Zr
4
Al
CH3
CH3 CH3
Inorganic Metalorganic Organometallic
Metal Halides:M−F, M−Cl, M−Br, M−I
Metal alkoxidesMetal β-diketonates
Metal dialkylamidosMetal amidinates
Metal alkyls
Metal cyclopentadienyls
Adv:
Thermal stabilityReactivity
Molecule size
Disadv:
By-productsVapor pressure
Adv:
Vapor pressure
Disadv:
Thermal stabilityReactivityMolecule size
Adv:
ReactivityThermal stabilityBy-productsVapor pressure
Disadv:
Availability
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 20/50
Picosun Oy Proprietary
Reactor Flow-type
Cross-flow ReactorPerpedicular flow Reactor”showerhead”
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 21/50
Picosun Oy Proprietary
Poisoning of Reactive Sites
By-products: ∼1014 molecules/cm2 vs. Precursor: ∼1017 molecules/pulse (0.5 mg/ 0.1 s pulse)K.-E. Elers, T. Blomberg, M. Peussa, B. Aicthison, S. Haukka, S. Marcus: Film Uniformity in Atomic Layer Deposition / Chem. Vap.
Deposition , 12 (2006) 13.
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 22/50
Picosun Oy Proprietary
Advantages of ALD
• Excellent film uniformity even on large substrates• Unique film step coverage compared to any other deposition technique
• Molecular range film thickness control due to self limiting growth mechanism
Amorphous aluminum oxide Al2O3
Mikrokemia Oy / University ofHelsinki
Polycrystalline strontium titanate SrTiO3
Insulator with a high dielectric constantUniversity of Helsinki
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 23/50
Picosun Oy Proprietary
Advantages of ALD
• Wide range of film materials available
• Highly repeatable film thickness• Extremely accurate composition control of mixed oxides, graded
layer and nanolaminates• Generally deposited films have less impurities than the films made
by other deposition techniques at the same deposition temperature• High density and low impurity level of the films enable excellent
physical and chemical properties• Lower deposition temperature can be used for sensitive substrates
than in CVD technique• Easy technique for wafer batch processing
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 24/50
Picosun Oy Proprietary
ALD in Finland
1. Picosun
2. Atomic Layer Deposition
3. ALD in Finland
4. Thin film materials and applications
5. SUNALE™ ALD process tools6. Co-operation partners
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 25/50
Picosun Oy Proprietary
Milestones of ALD in Finland
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 26/50
Picosun Oy Proprietary
Early ALD Reactors
Sven Lindfors and his ALD reactor in 1978
E l f ALD R
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 27/50
Picosun Oy Proprietary
Examples of ALD Reactors
Designed in Finland
F-950 ALD reactor
Microchemistry Ltd.Developed in 1990’sfor flat panel production
PULSAR™ 2000/3000 ALD reactors
designed by Microchemistryowned by ASM International, Inc
MC 120 CAT ALD reactor
Acquired by Picosun OyDeveloped in early 1990’sfor R&D of heterogeneouscatalysts (e.g. US6534431)
E l f ALD R t
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 28/50
Picosun Oy Proprietary
Examples of ALD Reactors
Designed in Finland
SUNALE™ ALD process tools from Picosun
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 29/50
Picosun Oy Proprietary
Materials and Applications
1. Picosun
2. Atomic Layer Deposition
3. ALD in Finland
4. Thin film materials and applications
5. SUNALE™ ALD process tools
6. Co-operation partners
E l f Thi Fil M t i l
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 30/50
Picosun Oy Proprietary
Examples of Thin Film Materials
Deposited with ALD• Metal nitrides e.g. TiN, NbN- wear-resistant coatings
- diffusion barriers- superconductor
• Metal oxides e.g. Al2O3, TiO2, SnO2, ZnO, HfO2- coatings against corrosion (nanolaminates)- diffusion barriers- gas sensors
- capacitors for integrated cicuits- gap fill in read heads for hard disks- thin films for optics
• Metals e.g. Ru, Ir, Pt- electrical conductors- nucleation and adhesion layers- metallization in integrated circuits • Metal sulfides e.g. ZnS
• - light emitting materials
Typical thickness of a thin film depending on an application 1 nm – 100 nm
I t l i d ith
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 31/50
Picosun Oy Proprietary
polysilicon
k ≅ 9 (HfSiOx:N) ?
Reference: Solid State Technology, November 2007
transistor
Intel microprocessors made with
45 nm design features
Al O grown by ALD from TMA
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 32/50
Picosun Oy Proprietary
Electrical breakdown strength is9 - 10 MV / cm
90 – 100 V / 100 nm0.9 – 1.0 V / nm
Atomic Layer Deposition of AlOx for Thin Film Head Gap ApplicationsJ. Electrochem. Soc., Volume 148, Issue 9, pp. G465-G471 (September 2001)Ajit Paranjpe, Sanjay Gopinath, Tom Omstead, and Randhir Bubber
Hitachi Global Storage Technologies
TDK10 - 20 nm
Al2O3 grown by ALD from TMA
and H2O
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 33/50
Picosun Oy Proprietary
Al2O3 and ZnO and is proposed for use as charge dissipative layers
HERRNLANN Cari F. ; DELRIO Frank W. ; MILLER David C. ; GEORGE Steven M. ; BRIGHTVictor M. ; EBEL Jack L. ; STRAWSER Richard E. ; CORTEZ Rebecca ; LEEDY Kevin D. ;Sensors and actuators. A, Physical (Sens. actuators, A Phys.) ISSN 0924-4247Source / Source2007, vol. 135, no1, pp. 262-272
Large Force Electrostatic MEMS Comb DriveMEMS actuator
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 34/50
Picosun Oy Proprietary
SUNALE™ ALD Process Tools
1. Picosun
2. Atomic Layer Deposition
3. ALD in Finland
4. Thin film materials and applications
5. SUNALE™ ALD process tools
6. Co-operation partners
SUNALE™ ALD Process Tool
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 35/50
Picosun Oy Proprietary
SUNALE™ ALD Process Tool
Features• Extremely versatile processing capabilities
packed in compact, handy and lightweight
structure• Highly customizable reactor structure with
variety of source, reaction chamber andwafer transfer options
• Uniform and ultra-conformal film depositionon 2-8’’ planar substrates, 4’’ wafer batches(25 wafers), 3D objects, powders andthrough porous substrates
• Process temperatures up to 500°C• Precursor sources for gaseous, liquid and
solid chemicals. Heated precursor sourcetemperature up to 200°C.
SUNALE™ ALD Process Tool
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 36/50
Picosun Oy Proprietary
SUNALE™ ALD Process Tool
Features
• Up to six precursor sources allow widevariety of processes from basic oxidesand nitrides to advanced nanolaminatesand graded layers
• Professional ALD software installed inuser-friendly touch panel PC• Optional substrate loader, vacuum
pump, ozone delivery system andnitrogen generator can be bought
together with the ALD process tool
SUNALE™ ALD Process Tool
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 37/50
Picosun Oy Proprietary
SUNALE™ ALD Process Tool
Precursor Source Options• Picosolid™ Basic heated source system for low vapor
pressure liquids and solids• Picosolid™ Booster heated source system for very low
vapor pressure liquids and solids• Picohot™ heated source system for low vapor
pressure liquids• Picosolution™ source for high vapour pressure liquids
• Picosolution™ source system with ventilated cabinet• Picozone™ ozone delivery system• Picogases™ source system with ventilated cabinet• Picogases ™ connection
• Hot feed-throughs into theprocess chamber
• Rising temperature profile• High-speed ALD valves• Efficient purging
SUNALE™ ALD Process Tool
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 38/50
Picosun Oy Proprietary
SUNALE ALD Process Tool
Loader Options• Picoloader™ Lift pneumatic elevator• Picoloader™ Handyman manual loader with a load
lock and a gate valve• Picoloader™ Semi-Pro automatic loader with a load
lock and a gate valve• Picoloader™ Autopilot cassette-to-cassette loader• Customized systems integrated with UHV cluster tools
and robots
Picoloader™ Semi-Pro automatic loader
SUNALE™ ALD Process Tool
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 39/50
Picosun Oy Proprietary
SUNALE ALD Process Tool
Software and Electronics Options• Basic entry-level software and electronics for 2
sources operated with a touch panel PC• Advanced multisource software and electronics for up
to 6 sources operated with a touch panel PC• Separate control cabinet electronics system and a
touch screen for customized multisource systems
• High-precision control of pulse timings• Recipes for nanolaminates and graded layers• Integrated pulse monitor• Data storage and export/import options on CF for
recipes and trend charts• Standard electronics components for easy
maintenance
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 40/50
Picosun Oy Proprietary
Heated source for solid and liquid precursors- Integrated particle filter for solid powders- Replaceable cartridge for powder and liquids inside the source (no need to
disassemble the source between different precursors)
Gas flow perpendicular to the substrate[i], [ii]
- Enables uniform film deposition with challenging precursor chemistries- Enables higher growth rate than tangential flow (cross-flow) reactor
Isolated reaction chamber mounted inside a vacuum chamber- Metal-metal sealing surface and pressure control keeps all process gases inside the
reaction chamber and no condensation occurs in the vacuum chamber walls- Ensures that no corrosion occurs on the vacuum chamber walls- No maintenance needed for the vacuum chamber- Makes easy maintenance for the reaction chamber
Hot-wall reaction chamber
- The walls are at the same temperature as the substrate- Prevents secondary reaction routes inside the reaction chamber that would result in
the loss of self-limited growth mechanism of ALD- Ensures the best particle performance and long maintenance cycles
Four separate source lines and inlets with separate MFCs and PTs
- Prevents cross-contamination and reaction between different precursors before theyenter the reaction chamber
- Innovative PT setup with SW comprises pulsing monitoring (easy start-up of new
precursor)
IMPORTANT SPECS FOR THE TOOL AND PROCESS FUNCTIONALITY!!!
Important Design Specs
S f
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 41/50
Picosun Oy Proprietary
Software and hardware interlocks of hazardous chemicals- Gas sensors to detect possible NH3 and O3 leaks- Gas cabin for safe handling of high pressure gases and safe purging of gas lines- TMA (trimethyl aluminium) cabin for pyrophoric chemicals- Normally closed pneumatic valves (all valves closed if the pneumatic line burns)
Software and hardware interlocks for hardware
- Software based pressure monitoring of the vacuum chamber with interlock limits- Hardware interlock of the vacuum chamber over pressure- Hardware interlock for overheating (touch safety: ∼60 °C) of outer vacuum chamber
wall- Earthquake support legs of the reactor- Emergency Off (EMO) buttons- Hardware interlock of pneumatic lift crash
Automatic opening of the reaction chamber controlled with a touch panel
- No need to touch the reaction chamber lid when the reactor is heated
Reaction chamber mounted inside a cold-wall vacuum chamber
- Prevents possible injuries by burning hands or equipment on the hot reaction
chamber lid- Isolated reaction chamber ensures that all hazardous chemicals stay inside the
reaction chamber and no condensation occurs on cold vacuum chamber walls
IMPORTANT SPECS FOR SAFETY!!!
Safety
Examples of Processes Our Customers Have
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 42/50
Picosun Oy Proprietary
Examples of Processes Our Customers HaveTested with SUNALE™ ALD Process Tools
1) TMA + H2O Al2O3
2) AlCl3 + H2O Al2O3
3) Ta(OEt)5 + H2O Ta2O5
4) TaCl5 + H2O Ta2O5
5) TiCl4 + H2O TiO2
6) Ti(OiPr)4 + H2O TiO2
1) T. Pilvi, M. Kemell, T. Hatanpää, H. Su, J. Pearson, S. Nenonen, M. Leskelä, and M. Ritala, ALD of Ir on Microchannel Plates for X-ray Optic Applications, Presentedat AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.2) T. Aaltonen, Atomic Layer Deposition of Noble Metal Thin Films, Doctoral dissertation, University of Helsinki, Faculty of Science, Department of Chemistry, April 2005.
7) Ir(acac)3 + O2 Ir(1,2
8) Ir(MeCp)(CHD) + O2 Ir(2
9) RuCp2 + O2 Ru(2
10)ZnEt2 + H2O ZnO11)(Ga(NMe2)3)2 + H2O Ga2O3
12)TEMAH + H2O HfO2
E l f Fil R lt
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 43/50
Picosun Oy Proprietary
Examples of Film Results
Al2O3 from TMA and H2O, 100 mm Si-wafer
• Deposition temperature: 300°C
• Thickness: 47.2 nm• 1-σ non-uniformity (100 * ave. / stdev.): 0.21 %
TiO2 from TiCl4 and H2O, 100 mm Si-wafer
• Deposition temperature: 300°C
• Thickness: 117 nm
• 1-σ non-uniformity (100 * ave. / stdev.): 0.6 %
ZnO from DEZ and H2O, 100 mm Si-wafer
• Deposition temperature: 300°C
• Thickness: 28.1 nm
• 1-σ non-uniformity (100 * ave. / stdev.): 0.94 %
E l f Fil R lt
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 44/50
Picosun Oy Proprietary
Examples of Film Results
Al2O3 from TMA and H2O
• Deposition temperature: 300°C
• Al2
O3
thickness: 80 nm
• Trenches: 94 µm deep, 7-7.2 µm wide, aspect ratio > 12
• 100 % conformality within SEM measurement precision
• SEM-pictures: Courtesy of VTT, Finland
Batch Reactor Results
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 45/50
Picosun Oy Proprietary
Batch Reactor ResultsThickness and RI Variation Between Slots
This figure depicts how there is hardly any difference in thickness and RI valuesbetween slots. There are five data points in each slot number.
0
1020
30
40
50
60
0 5 10 15 20 25Slot number
T h
i c k n e s s [ n m
]
1
1,2
1,4
1,6
1,8
2
R e
f r a c t i v e i n d e
x
ThicknessRI
Batch Reactor Results
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 46/50
Picosun Oy Proprietary
a a s sRun to Run Repeatability
This figure depicts repeatability between runs. Each data point is an average of 5 pointsof single wafer. All data points represent the same slot of batch.
0
10
20
30
40
50
60
0 1 2 3 4 5 6 7 8 9 10Batch number
A v e r a g e t h i c k n e s s
[ n m ]
1
1,2
1,4
1,6
1,8
2
R e
f r a c t i v e i n d e
x
ThicknessRI
Batch Reactor Results
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 47/50
Picosun Oy Proprietary
Batch Reactor ResultsParticle Level
These figures depict the total particle level for Al2O3 process at a customer site. In eachdeposition the thickness of the Al2O3 film was 50 nm. All the data points represent thesame slot of the batch.
Batch Reactor Results
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 48/50
Picosun Oy Proprietary
Film Uniformity in a Batch Chamber
0.3 %< 2 %Batch to Batch
1.0 %< 2 %WithinBatch
0.6 %< 1 %WithinWafer
MeasuredData
Specification
Uniformity: 1σ, STD, 9 points in each wafer (100 mm)
SUNALE™ ALD Process Tools
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 49/50
Picosun Oy Proprietary
SUNALE™ ALD Process Tools
1. Picosun
2. Atomic Layer Deposition
3. ALD in Finland4. Thin film materials and applications
5. SUNALE™ ALD process tools
6. Co-operation partners
Networking with Co-Operation Partners
7/21/2019 ALD Introduction Picosun Ald Review
http://slidepdf.com/reader/full/ald-introduction-picosun-ald-review 50/50
Picosun Oy Proprietary
New
Source chemicalsThin film materials
ProcessesApplications
TEKNILLINEN KORKEAKOULU
Partnering Companies
Universities Research Institutes
Customer Companies
Top Related