Topics in IC Design T-Coil - Seoul National University

27
Topics in IC Design T-Coil Deog-Kyoon Jeong [email protected] School of Electrical and Computer Engineering Seoul National University 2020 Fall (Compliment to Hyungrok Do)

Transcript of Topics in IC Design T-Coil - Seoul National University

Page 1: Topics in IC Design T-Coil - Seoul National University

Topics in IC Design

T-Coil

Deog-Kyoon Jeong

[email protected]

School of Electrical and Computer Engineering

Seoul National University

2020 Fall

(Compliment to Hyungrok Do)

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Introduction

β€’ Inductors produce peaking, thereby giving

bandwidth extension.

β€’ T-coil (Tee-Coil) produces even more bandwidth

extension by giving negative inductance.

Β© 2020 DK Jeong Topics in IC Design 2

Dot conventionSame direction : k > 0

Opposite direction : k < 0

𝐌 = 𝐀 π‹πŸπ‹πŸ|k| ≀ 1

|k| = 1 when inductors share all of

their magnetic flux.

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Introduction

β€’ Introduced by Ginzton in 1948 as part of distributed

amplifier.

Β© 2020 DK Jeong Topics in IC Design 3

[0] Ginzton, Proc IRE, 1948

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T-Coil

β€’ Common Source Amplifier

Β© 2020 DK Jeong Topics in IC Design 4

π’‡πŸ‘π’…π‘© = ΀𝟏 πŸπ…π‘Ήπ‘«π‘ͺ𝑳

Without T-Coil, 1

1 + 𝑠𝑅𝐷𝐢𝐿

With T-Coil,

[1] B. Razavi, ISSC Magazine, 2015

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β€’ When two zeros in the numerator are cancelled by two of the four

poles in the denominator, the second-order transfer function is

obtained.

β€’ Given RD and CL, what are CB, L, and M, assuming L1 = L2 = L

(symmetric T-Coil)?

β€’ Four equations must be satisfied with five variables (CB, L, M,

, πœ”π‘›). Out of numerous solutions, what is the best transfer

function that maximizes the bandwidth?

Β© 2020 DK Jeong Topics in IC Design 5

Symmetric T-Coil

𝑏4πœ”π‘›2 = π‘Ž2

𝑏3πœ”π‘›2 = π‘Ž22πœ”π‘› + π‘Ž1

𝑏2πœ”π‘›2 = π‘Ž2πœ”π‘›

2 + π‘Ž12πœ”π‘› + 1

𝑏1πœ”π‘›2 = π‘Ž1πœ”π‘›

2 + 2πœ”π‘›

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Symmetric T-Coil

β€’ Let k=M/L and simplify 4 equations.

Β© 2020 DK Jeong Topics in IC Design 6

2

2

1 1

4 1

12

1

2

1

1

2 1

B

L

L B

D

n

L

D L D

L

C k

C k

k LkC C

k R

k LC

R C k L R

k LC

2

2

2

2

2

22

2 2

1 44

4 1

4 1

16

16

D L

LB

n

D L

R CL

k

CC

R C

β€’ Then, determine that maximizes the bw.

[1] B. Razavi, ISSC Magazine, 2015

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Symmetric T-Coil

β€’ With the following 2nd order transfer function,

β€’ 3-dB BW with T-Coil is

which is maximized when .

β€’ Then

Β© 2020 DK Jeong Topics in IC Design 7

22 2 2 2

,

22

2 2

2 2

1 2 1 2 1

161 2 1 2 1

BW T Coil n

D LR C

,

3

12 2

2.828

BW T Coil n

D L

dB

R C

[1] B. Razavi, ISSC Magazine, 2015

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β€’ The maximum bandwidth solution is

𝐿 =3

8𝑅𝐷2𝐢𝐿 , 𝑀 =

1

3𝐿, 𝐢𝐡 =

1

8𝐢𝐿, πœ”π‘›=2 2/𝑅𝐷𝐢𝐿

which extends the bandwidth by 2.828.

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Symmetric T-Coil

Β© 2020 DK Jeong

BWER=2.828

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β€’ What are its input impedances Zin1 and Zin2?

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Features of Symmetric T-Coil

Zin1

Under the maximum bandwidth

condition,

Zin1 = RD

Zin2 =

T-Coil is transparent.

CL is not seen.

Can be used for return loss (RL)

minimization.

Zin2

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β€’ What is the transfer function to the resistor node?

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Features of Symmetric T-Coil

VR

β€’ Under the maximum bandwidth

condition,

β€’ All-pass function with infinite

bandwidth!

β€’ Extra phase delay could be a

problem.

𝑉𝑅𝑉𝑖𝑛

𝑠 = βˆ’π‘”π‘šπ‘…π·π‘ 2 βˆ’ 2πœ”π‘›π‘  + πœ”π‘›

2

𝑠2 + 2πœ”π‘›π‘  + πœ”π‘›2

Β© 2020 DK Jeong

βˆ†βˆ… πœ” = βˆ’2 arctan[2πœ”π‘›πœ”

πœ”π‘›2 βˆ’ πœ”2

]

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β€’ With one less constraint (L1L2), more freedom for

design is utilized to extend the bandwidth at the cost

of higher design complexity.

β€’ Given RD and CL, what are CB, L1, L2 , and M?

β€’ Four equations must be satisfied with five variables

(CB, L1, L2 , M, πœ”π‘›, and = ΀𝟐 𝟐). Out of numerous

solutions, what is the best transfer function that

maximizes the bandwidth, πŽπŸ‘π’…π‘©,π‘»βˆ’π‘ͺπ’π’Šπ’?

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Asymmetric T-Coil

𝑏4πœ”π‘›2 = π‘Ž2

𝑏3πœ”π‘›2 = π‘Ž22πœ”π‘› + π‘Ž1

𝑏2πœ”π‘›2 = π‘Ž2πœ”π‘›

2 + π‘Ž12πœ”π‘› + 1

𝑏1πœ”π‘›2 = π‘Ž1πœ”π‘›

2 + 2πœ”π‘›

Β© 2020 DK Jeong

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Asymmetric T-Coil

β€’ No closed-form analytical solution was found.

β€’ So, first assume L1=L, L2=bL, M= mL, with constraint

of the coupling coefficient

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π‘˜ =𝑀

𝐿1𝐿2=

π‘š

𝑏< 1

Β© 2020 DK Jeong

[3] S.C.D.Roy, IETE Journal of Research, 2016

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Asymmetric T-Coil

β€’ b=1 (Symmetric T-Coil)

β€’ b=1, m=0.333 (k=0.333), 𝑳 = 𝟎. πŸ‘πŸ•πŸ“π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 𝟎. πŸπŸπŸ“π‘ͺ𝑳, πŽπ’= 2. πŸ–πŸπŸ–/𝑹𝑫π‘ͺ𝑳

β€’ b<1, what are m(k), 𝑳, π‘ͺ𝑩, πŽπ’? (using Mathematica)

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b=1.0, m= 0.333 (k=0.333), 𝑳 = 0.375π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.1250π‘ͺ𝑳, πŽπ’= 2.828/𝑹𝑫π‘ͺ𝑳

b=0.9, m= 0.378 (k=0.398), 𝑳 = 0.406π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.1074π‘ͺ𝑳, πŽπ’= 2.939/𝑹𝑫π‘ͺ𝑳

b=0.8, m= 0.412 (k=0.460), 𝑳 = 0.44πŸ’π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.091πŸ”π‘ͺ𝑳, πŽπ’= 3.062/𝑹𝑫π‘ͺ𝑳

b=0.7, m= 0.436 (k=0.521), 𝑳 = 0.49πŸπ‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.077𝟐π‘ͺ𝑳, πŽπ’= 3.202/𝑹𝑫π‘ͺ𝑳

b=0.6, m= 0.449 (k=0.580), 𝑳 = 0.55πŸ‘π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.063πŸ—π‘ͺ𝑳, πŽπ’= 3.367/𝑹𝑫π‘ͺ𝑳

b=0.5, m= 0.451 (k=0.638), 𝑳 = 0.635π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.051πŸ’π‘ͺ𝑳, πŽπ’= 3.572/𝑹𝑫π‘ͺ𝑳

b=0.4, m= 0.440 (k=0.696), 𝑳 = 0.751π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.0396π‘ͺ𝑳, πŽπ’= 3.838/𝑹𝑫π‘ͺ𝑳

b=0.3, m= 0.414 (k=0.756), 𝑳 = 0.93πŸπ‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.0284π‘ͺ𝑳, πŽπ’= 4.215/𝑹𝑫π‘ͺ𝑳

b=0.2, m= 0.366 (k=0.818), 𝑳 = 1.25πŸŽπ‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.017πŸ–π‘ͺ𝑳, πŽπ’= 4.828/𝑹𝑫π‘ͺ𝑳

b=0.1, m= 0.280 (k=0.886), 𝑳 = 2.02πŸ–π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 = 0.007πŸ–π‘ͺ𝑳, πŽπ’= 6.176/𝑹𝑫π‘ͺ𝑳

Β© 2020 DK Jeong

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Practical Implementation

β€’ Coupling coefficient of greater than 0.7 is not

practical with on-chip spiral inductor.

β€’ So, b=0.4, m= 0.440 (k=0.696), 𝑳 = 0.751π‘Ήπ‘«πŸπ‘ͺ𝑳, π‘ͺ𝑩 =

0.0396π‘ͺ𝑳, πŽπ’= 3.838/𝑹𝑫π‘ͺ𝑳 is the practical limit.

Topics in IC Design 14Β© 2020 DK Jeong

[3] S.C.D.Roy, IETE Journal of Research, 2016

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Output at Resistor Load

With asymmetric T-coil and =΀𝟐 𝟐,

1) transfer function to RD?

2) impedance seen from either

side of the T-Coil?

Zin1 = ?

Zin2 = ?

Β© 2020 DK Jeong Topics in IC Design 15

VR

Zin1

Zin2

π‘½π‘Ήπ‘½π’Šπ’

𝒔 = ?

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T-Coil Design Flow

β€’ Design flow

– For given CL and RD, determine L1, L2, k, and CB.

– Design T-coil in a 3-D EM tool and extract S-parameter or circuit model.

– Perform circuit simulation including parasitic resistance and capacitance.

β€’ Parasitic RC

– If using top metal, a 100 pH of inductor has series resistance of 5 ~ 10 .

– Natural bridge capacitance is known to be 10 ~ 30 fF.

β€’ Realistic limitation

– k can’t be over +0.7 in the chip.

– Self-resonance limits large k and L.

Β© 2020 DK Jeong Topics in IC Design 16

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Eye Diagram Optimization

β€’ Maximally Flat Gain ( = 1/√2) vs Maximally Flat Phase Delay ( = 1)

β€’ Minimum Jitter Condition: Minimum phase delay variation

Β© 2020 DK Jeong Topics in IC Design 17

[4] W Bae, TVLSI, 2017

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Asymmetric T-Coil Simulation

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Ξ· = 3.04 as expected

Gain:

No T-coil

T-coil 1

T-coil 2

Phase delay:

No T-coil

T-coil 1

T-coil 2

CL = 200 fF, RT = 50

(BW = 15.92 GHz)

΢ = 1/√2, k = 0.45

L = 219 pH, b = 0.815

CB = 18.74 fF

Two T-coils :

1. Maximally flat gain @ k = 0.45

2. Maximally flat phase delay

around 1. (L = 200 pH)

Page 19: Topics in IC Design T-Coil - Seoul National University

Asymmetric T-Coil Simulation

Β© 2020 DK Jeong Topics in IC Design 19

CL = 200 fF, RT = 50

(BW = 15.92 GHz)

΢ = 1/√2, k = 0.45

L = 219 pH, b = 0.815

CB = 18.74 fF

Two T-coils :

1. Maximally flat gain @ k = 0.45

2. Maximally flat phase delay

around 1. (L = 200 pH)

No T-coil T-coil 1 T-coil 2

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Return Loss Reduction

β€’ Minimize Return Loss at TX driver and RX receiver.

Β© 2020 DK Jeong Topics in IC Design 20

β€’ Effect of Large ESD Capacitance is removed.

[5] M.Kossel, JSSC, 2008

[6] M.S.Keel, EOS/ESD, 2015

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TX Optimization

Β© 2020 DK Jeong Topics in IC Design 21

Cp 200 fF

Ct 50 fF

Ce 100 fF

RT, Z0 50 Ξ©

No T-coil k = 0.5, L = 200 pH, b = 0.3

Z0CpbLL

Ce

Cc

CtRT

Channel

Vin

Vout

Zout

k = -0.25, L = 250 pH, b = 0.4

56Gb/s eye diagram

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Example: ESD Diode Isolation

Β© 2020 DK Jeong Topics in IC Design 22

[7] J.Kim, ISSCC, 2015

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Example: ESD Separation

Β© 2020 DK Jeong Topics in IC Design 23

[8] C.Y.Lin, IEEE Transactions on Electron Devices. 2013

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Example: Double T-Coil

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[9] G.Steffan, ISSCC, 2017

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Example: Coil with 4 ports

Β© 2020 DK Jeong Topics in IC Design 25

[10] J Kim, JSSC, 2019

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References

26Topics in IC DesignΒ© 2020 DK Jeong

[0] E. Ginzton et. al, β€œDistributed Amplification,” Proc. IRE, vol. 36, pp. 956–969, Aug.

1948.

[1] Razavi, Behzad, "The bridged T-coil [a circuit for all seasons]." IEEE Solid-State

Circuits Magazine 7.4 (2015): 9-13.

[2] Paramesh, Jeyanandh, and David J. Allstot. "Analysis of the bridged T-coil circuit

using the extra-element theorem." IEEE Transactions on Circuits and Systems II:

Express Briefs 53.12 (2006): 1408-1412.

[3] Dutta Roy, Suhash C. "A Theoretical Investigation into the Limits of Bandwidth

Enhancement with the Asymmetrical Bridged T-Coil Network." IETE Journal of

Research 62.3 (2016): 379-386.

[4] Bae, Woorham, Borivoje Nikolić, and Deog-Kyoon Jeong. "Use of phase delay

analysis for evaluating wideband circuits: An alternative to group delay analysis."

IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25.12 (2017):

3543-3547.

[5] Kossel, Marcel, et al. "A T-Coil-Enhanced 8.5 Gb/s High-Swing SST Transmitter in

65 nm Bulk CMOS With β‰ͺ-16 dB Return Loss Over 10 GHz Bandwidth." IEEE

Journal of Solid-State Circuits 43.12 (2008): 2905-2920.

[6] Keel, Min-Sun, and Elyse Rosenbaum. "CDM-reliable T-coil techniques for high-

speed wireline receivers." 2015 37th Electrical Overstress/Electrostatic Discharge

Symposium (EOS/ESD). IEEE, 2015.

Page 27: Topics in IC Design T-Coil - Seoul National University

References

27Topics in IC DesignΒ© 2020 DK Jeong

[7] Kim, Jihwan, et al. "3.5 A 16-to-40Gb/s quarter-rate NRZ/PAM4 dual-mode

transmitter in 14nm CMOS." 2015 IEEE International Solid-State Circuits

Conference-(ISSCC) Digest of Technical Papers. IEEE, 2015.

[8] Lin, Chun-Yu, Li-Wei Chu, and Ming-Dou Ker. "Robust ESD protection design for

40-Gb/s transceiver in 65-nm CMOS process." IEEE transactions on electron

devices 60.11 (2013): 3625-3631.

[9] Steffan, Giovanni, et al. "6.4 A 64Gb/s PAM-4 transmitter with 4-Tap FFE and 2.26

pJ/b energy efficiency in 28nm CMOS FDSOI." 2017 IEEE International Solid-

State Circuits Conference (ISSCC). IEEE, 2017.

[10] Kim, Jihwan, et al. "A 112 Gb/s PAM-4 56 Gb/s NRZ reconfigurable transmitter

with three-tap FFE in 10-nm FinFET." IEEE Journal of Solid-State Circuits 54.1

(2019): 29-42.