Superconductive Magnetoresistive Random-Access Memory (JMRAM)
description
Transcript of Superconductive Magnetoresistive Random-Access Memory (JMRAM)
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SUPERCONDUCTIVE MAGNETORESISTIVE RANDOM-ACCESS MEMORY (JMRAM)By
Charles Nathan Cardinell
Mentor
Nathan Newman
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Objective• To create a RAM that requires very little power• Resistive to Radiation Damage• Fast Switching
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Memory Comparision
FLASH DRAM SRAM JMRAM (projected)
Cell Size (μm^2) 0.04 0.03 0.3 <1.25
Read Time (ns) 10 - 50 10 1 <5
Write Time .1 - 100 ms 10 ns 1 ns <5 ns
Write Energy per Bit 10 nJ5 pJ (Requires
Refresh) 5 pJ 4 - 10 pJEndurance (read/write) 10^15/10^5 10^15 10^15 10^15
Non-Volatillitile Yes No No Yes
• JMRAM has a faster read/write time• JMRAM is low power• JRAM has high endurance
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Review of Magnetoresistive Random-Access Memory (MRAM)
• Non-Volatile• Data stored as a magnetic element
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Review of Superconductive Magnetoresistive Random-Access Memory (JMRAM)
• Uses Josephson Junctions• Faster then Normal MRAMs
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Growth of the JMRAM
• (Ultra-High Vacuum) UHV chamber
• 4 guns and targets• Large temperature range
• Vacuum to 10-9 Torr• Sapphire and Silica substrates
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Types of Devices
Shadow Mask
• Advantages• Cheap• Fast
• Disadvantages• Larger Device Area• Poorer Quality Films• Less Consistant
Processed
• Advantages• Multiple Device Sizes• Multiple Devices• Better Quality Films• Less Pin Holes
• Disadvantage• Expensive• More Chances for a mistake
to occur
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Processing of the JMRAM
Step #1: Reduced Working Area Etch
Step #2: Junction Definition Etch
Step #3: Silica Dioxide Deposition
Step #4: Via Etch
Step #5: Metal Liftoff
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Measuring the JMRAM
• Done in a shielded room
• Wide range of temperatures and magnetic fields
• Digital Systems Used
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Results
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NHP4-1 at 5.3K, Ic=34uA, Rn=8.3 Ohm.
mAConductance
mV
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Conclusions
JMRAM has the possibility to be used in a wide range of areas such as
• Satellites• Banks• Search Engines• Databases
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THANK YOUQuestions?