RHTVSAC0521N-S · Peak Pulse Power ( t. p =8/20μs ) P. PP. 65. Watts Peak Pulse Current ( t. p ......
Transcript of RHTVSAC0521N-S · Peak Pulse Power ( t. p =8/20μs ) P. PP. 65. Watts Peak Pulse Current ( t. p ......
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Features
■ 65Watts peak pulse power (tp = 8/20μs)
■ Bidirectional configurations
■ Solid-state silicon-avalanche technology
■ Low clamping voltage
■ Low leakage current
■ IEC 61000-4-2 ±15kV contact ±20kV air
■ IEC 61000-4-4 (EFT) 40A (5/50ns)
■ IEC 61000-4-5 (Lightning) 6A (8/20μs)
Applications
■ Microprocessor based equipment
■ Personal Digital Assistants (PDA’s)
■ Notebooks, Desktops, and Servers
■ Portable Instrumentation
■ Pagers Peripherals
Mechanical Data
■ DFN1006 package
■ Molding compound flammability rating: UL 94V-0
■ Packaging: Tape and Reel
■ RoHS/WEEE Compliant
Schematic & PIN Configuration
DFN1006
RHTVSAC0521N-S Transient Voltage Suppressing Device
For ESD/Transient Protection
2 / 4
Absolute Maximum Rating
Rating Symbol Value Units
Peak Pulse Power ( tp =8/20μs ) PPP 65 Watts
Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 6 A
ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact)
VESD 20
15kV
Lead Soldering Temperature TL 260(10seconds) ℃
Junction Temperature TJ -55 to + 150 ℃
Storage Temperature Tstg -55 to + 150 ℃
Electrical Characteristics
Parameter Symbol Conditions Min Typical Max Units
Reverse Stand-Off Voltage VRWM 5.0 V
Reverse Breakdown Voltage VBR IT=1mA 6.0 V
Reverse Leakage Current IR VRWM=5V,T=25℃ 1 uA
Clamping Voltage VC IPP=6A,tp=8/20μs 11 V
Junction Capacitance Cj VR = 0V, f = 1MHz 6 8 pF
Electrical Parameters (TA = 25°C unless otherwise noted)
Note:. 8/20μs pulse waveform.
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
V
I
RHONDA SEMICONDUCTOR CO.,LTD
Transient Voltage Suppressing Device
RHTVSAC0521N-S
For ESD/Transient Protection
3 / 4
Typical Characteristics
110
100
90
80
70
60
50
40
30
20
10
0
Per
cent
of
Rat
ed P
ow
er f
or
I pp
Ambient Temperature - TA (℃)
Figure 2: Power Derating Curve
0 25 50 75 100 125 150
Figure 1: Peak Pulse Power vs. Pulse Time
10
1
0.1
0.01
1 10
td – Pulse Duration - µs
Ppp
– P
eak P
uls
e P
ow
er
- P
pp(K
W)
0.1 100 1,000
65w 8/20µs waveform
Fig.3 Pulse Waveform-8/20μs Fig.4 Pulse Waveform-ESD(IEC61000-4-2)
0 5 10 15 20 25 30 0 30 60
Tri
gg
er a
nd
Cla
mp
ing
Vo
ltag
e(V
)
Time (μs) Time (ns)
100
80
60
40
20
0
120
Perc
e
n t of
I PP
e-t
100%IPP , 8μS
50%IPP, 20μS
Perc
ent o
f IPP
100%
90%
10%
30ns
60ns
tr 0.7 to 1ns
Fig.5 IEC61000-4-2 +8kV Contact Discharge
Time (ns)
Fig.6 IEC61000-4-2 -8kV Contact Discharge
Tri
gg
er a
nd
Cla
mp
ing
Vo
ltag
e(V
)
Time (ns)
RHONDA SEMICONDUCTOR CO.,LTD
Transient Voltage Suppressing Device
RHTVSAC0521N-S
For ESD/Transient Protection
4 / 4
Outline Drawing – DFN1006
Marking
Ordering information
Order code Package Base qty Delivery mode
DFN1006 10K Tape and reel
PB
RHONDA SEMICONDUCTOR CO.,LTD
Transient Voltage Suppressing Device
RHTVSAC0521N-S
For ESD/Transient Protection
RHTVSAC0521N-S