RGS00TS65D : IGBT - Rohmrohmfs.rohm.com/.../databook/datasheet/discrete/igbt/rgs00ts65d-e.pdf · 0...
Transcript of RGS00TS65D : IGBT - Rohmrohmfs.rohm.com/.../databook/datasheet/discrete/igbt/rgs00ts65d-e.pdf · 0...
Data Sheet
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
RGS00TS65D 650V 50A Field Stop Trench IGBT
*1 Pulse width limited by Tjmax.
lFeatures lInner Circuit
lOutline
VCES 650V TO-247N
IC(100°C) 50A
VCE(sat) (Typ.) 1.65V
PD 326W
1) Low Collector - Emitter Saturation Voltage
2) Short Circuit Withstand Time 8μs
3) Qualified to AEC-Q101
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Type
Packaging TubelApplications
Reel Size (mm) -General Inverter
Tape Width (mm) - for Automotive and Industrial Use
Basic Ordering Unit (pcs) 450
Packing Code C11
Marking RGS00TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter Symbol Value Unit
Collector - Emitter Voltage VCES 650 V
Gate - Emitter Voltage VGES 30 V
Collector CurrentTC = 25°C IC 88 A
TC = 100°C IC 50 A
Pulsed Collector Current ICP*1 150 A
Diode Forward CurrentTC = 25°C IF 56 A
TC = 100°C IF 30 A
Diode Pulsed Forward Current IFP*1 150 A
Power DissipationTC = 25°C PD 326 W
TC = 100°C PD 163 W
Operating Junction Temperature Tj -40 to +175 °C
Storage Temperature Tstg -55 to +175 °C
(1) Gate (2) Collector (3) Emitter
*1
*1 Built in FRD
(1)
(2)
(3)
(1) (2) (3)
1/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lThermal Resistance
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
VCE = 650V, VGE = 0V
Parameter SymbolValues
UnitMin. Typ. Max.
°C/W
°C/W
Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17
Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.46
- -
UnitMin. Typ. Max.
μA
mA
Parameter Symbol ConditionsValues
V
Collector Cut - off Current ICES
Collector - Emitter Breakdown
VoltageBVCES IC = 10μA, VGE = 0V 650 - -
Tj = 25°C
Tj = 175°C
10
5
- -
Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - -
Gate - Emitter Threshold
VoltageVGE(th) VCE = 5V, IC = 2.5mA 5.0 6.0
Collector - Emitter Saturation
VoltageVCE(sat)
IC = 50A, VGE = 15V
nA
7.0 V
VTj = 25°C - 1.65 2.10
Tj = 175°C - 2.15 -
±200
2/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
*2 Design assurance without measurement
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
pFOutput Capacitance Coes VGE = 0V - 134 -
Reverse Transfer Capacitance Cres f = 1MHz
Input Capacitance Cies VCE = 30V - 1568 -
- 23 -
Total Gate Charge Qg VCE = 300V - 58 -
nCGate - Emitter Charge Qge IC = 50A - 15 -
Gate - Collector Charge Qgc VGE = 15V - 24 -
Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 36 -
nsRise Time tr VGE = 15V, RG = 10Ω - 21 -
Turn - off Delay Time td(off) Tj = 25°C
IC = 50A, VCC = 400V - 37 -
- 115 -
Fall Time tf Inductive Load - 91 -
Turn - on Switching Loss Eon *Eon includes diode - 1.46 -
Reverse Bias Safe Operating Area RBSOA
IC = 150A, VCC = 520V
FULL SQUARE -VP = 650V, VGE = 15V
RG = 50Ω, Tj = 175°C
- 145 -
Fall Time tf Inductive Load - 147 -
nsRise Time tr VGE = 15V, RG = 10Ω - 33 -
Turn - off Delay Time
mJTurn - off Switching Loss Eoff reverse recovery - 1.29 -
Turn - on Switching Loss Eon *Eon includes diode - 1.97 -mJ
Turn - off Switching Loss Eoff reverse recovery - 1.85 -
td(off) Tj = 175°C
Turn - on Delay Time td(on)
μs
VCC ≦ 360Vμs
VGE = 15V, Tj = 150°CShort Circuit Withstand Time tsc
*2 6 - -
VCC ≦ 360V
VGE = 15V, Tj = 25°CShort Circuit Withstand Time tsc 8 - -
3/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
Diode Forward Voltage VF
IF = 30A
VTj = 25°C - 1.45 1.90
Tj = 175°C - 1.55 -
ns
Diode Peak Reverse Recovery
CurrentIrr
IF = 30A- 7.1 - A
Diode Reverse Recovery Time trr - 103 -
-
trr - 242 -
Diode Reverse Recovery Energy Err - 15
- μJ
Diode Peak Reverse Recovery
CurrentIrr
IF = 30A- 9.8 -
Diode Reverse Recovery Energy Err - 113
- μC
μC
Diode Reverse Recovery
ChargeQrr - 1.3
A
μJ
Diode Reverse Recovery Time
Diode Reverse Recovery
ChargeQrr - 0.4 -
ns
4/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lElectrical Characteristic Curves
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
0 200 400 600 800
Tj≦175ºC
VGE=15V
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175
Tj≦175ºC
VGE≧15V
0.01
0.1
1
10
100
1000
1 10 100 1000
TC= 25ºC Single Pulse
10µs
100µs
Fig.2 Collector Current vs. Case Temperature
Colle
cto
r C
urr
ent
: I C
[A
]
Case Temperature : TC [ºC]
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
Colle
cto
r C
urr
ent
: I C
[A
]
Collector To Emitter Voltage : VCE[V]
Fig.1 Power Dissipation vs. Case Temperature
Pow
er
Dis
sip
ation :
PD [
W]
Case Temperature : TC [ºC]
Fig.3 Forward Bias Safe Operating Area
Colle
cto
r C
urr
ent
: I C
[A
]
5/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lElectrical Characteristic Curves
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14
VCE= 10V
Tj= 25ºC
Tj= 175ºC
0
1
2
3
4
25 50 75 100 125 150 175
IC= 100A
IC= 25A
IC= 50A
VGE= 15V
0
15
30
45
60
75
90
105
120
135
150
0 1 2 3 4 5
Tj= 175ºC
VGE= 20V
VGE= 12V
VGE= 10V
VGE= 8V
VGE= 15V
0
15
30
45
60
75
90
105
120
135
150
0 1 2 3 4 5
Tj= 25ºC
VGE= 20V
VGE= 15V
VGE= 12V
VGE= 10V
VGE= 8V
Fig.5 Typical Output Characteristics
Colle
cto
r C
urr
ent
: I C
[A
]
Collector To Emitter Voltage : VCE[V]
Fig.6 Typical Output Characteristics
Co
llecto
r C
urr
en
t :
I C [
A]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Colle
cto
r C
urr
ent
: I C
[A
]
Gate To Emitter Voltage : VGE [V]
Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature
Colle
cto
r T
o E
mitte
r S
atu
ration V
oltage
: V
CE
(sa
t) [V
]
Junction Temperature : Tj [ºC]
6/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lElectrical Characteristic Curves
0
5
10
15
20
5 10 15 20
Tj= 25ºC
IC= 100A
IC= 25A
IC= 50A
0
5
10
15
20
5 10 15 20
Tj= 175ºC
IC= 100A
IC= 25A
IC= 50A
1
10
100
1000
0 10 20 30 40 50 60 70 80
tf
VCC=400V, VGE=15V RG=10Ω, Tj=175ºC
Inductive load
td(off)
td(on)
tr
1
10
100
1000
0 10 20 30 40 50
tf
td(off)
td(on)
tr
VCC=400V, IC=50A VGE=15V, Tj=175ºC
Inductive load
Colle
cto
r T
o E
mitte
r S
atu
ration V
oltage
: V
CE
(sa
t) [V
]
Gate To Emitter Voltage : VGE [V]
Colle
cto
r T
o E
mitte
r S
atu
ration V
oltage
: V
CE
(sa
t) [V
]
Gate To Emitter Voltage : VGE [V]
Sw
itchin
g T
ime [ns]
Collector Current : IC [A]
Fig.12 Typical Switching Time vs. Gate Resistance
Sw
itchin
g T
ime [ns]
Gate Resistance : RG [Ω]
Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage
Fig.11 Typical Switching Time vs. Collector Current
7/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lElectrical Characteristic Curves
0.01
0.1
1
10
0 10 20 30 40 50 60 70 80
Eoff
VCC=400V, VGE=15V RG=10Ω, Tj=175ºC
Inductive load
Eon
1
10
100
1000
10000
0.01 0.1 1 10 100
Cies
f=1MHz VGE=0V Tj=25ºC
Coes
Cres
0.01
0.1
1
10
0 10 20 30 40 50
Eoff
Eon
VCC=400V, IC=50A VGE=15V, Tj=175ºC
Inductive load
0
5
10
15
0 10 20 30 40 50 60
IC=50A Tj=25ºC
200V
300V
400V
Fig.13 Typical Switching Energy Losses vs. Collector Current
Sw
itchin
g E
nerg
y Losses [m
J]
Collector Current : IC [A]
Fig.14 Typical Switching Energy Losses vs. Gate Resistance
Sw
itchin
g E
nerg
y Losses [m
J]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance vs. Collector To Emitter Voltage
Capacitance [
pF
]
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
Gate
To E
mitte
r V
oltage :
VG
E [V
]
Gate Charge : Qg [nC]
8/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lElectrical Characteristic Curves
0
5
10
15
20
0 10 20 30 40 50 60
Tj= 175ºC
Tj= 25ºC VCC=400V diF/dt=200A/µs
Inductive load
0
0.1
0.2
0.3
0.4
0.5
0.6
0 10 20 30 40 50 60
VCC=400V Tj= 175ºC
Inductive load
RG=10Ω
RG=20Ω
RG=50Ω
0
30
60
90
120
150
0 0.5 1 1.5 2 2.5 3 3.5
Tj= 175ºC
Tj= 25ºC
0
100
200
300
400
0 10 20 30 40 50 60
VCC=400V diF/dt=200A/µs
Inductive load
Tj= 175ºC
Tj= 25ºC
Fig.17 Typical Diode Forward Current vs. Forward Voltage
Forw
ard
Curr
ent
: I F
[A
]
Forward Voltage : VF[V]
Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current
Revers
e R
ecovery
Tim
e : t
rr [ns]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current
Revers
e R
ecovery
Curr
ent
: I r
r [A
]
Forward Current : IF [A]
Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current
Revers
e R
ecovery
Energ
y Losses : E
rr [m
J]
Forward Current : IF [A]
9/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lElectrical Characteristic Curves
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
D= 0.5 0.2 0.1
0.01 0.02 0.05
Single Pulse
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
D= 0.5 0.2 0.1
0.01
0.02
0.05
Single Pulse
Fig.21 IGBT Transient Thermal Impedance
Tra
nsie
nt T
herm
al Im
pedance
: Z
thJC [ºC
/W]
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
Tra
nsie
nt T
herm
al Im
pedance
: Z
thJC [ºC
/W]
Pulse Width : t1[s]
t1
t2
PDM
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
t1
t2
PDM
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
C1 C2 C3 R1 R2 R34.727m 49.61m 75.08m 254.6m 191.9m 13.50m
C1 C2 C3 R1 R2 R31.266m 10.51m 49.06m 492.7m 364.8m 312.7m
10/11 2016.07 - Rev.A
www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Data SheetRGS00TS65D
lInductive Load Switching Circuit and Waveform
VG
D.U.T.
D.U.T.
IF
diF/dt
Irr
trr , Qrr
Fig.23 Inductive Load Circuit
Fig.24 Inductive Load Waveform Fig.25 Diode Reverce Recovery Waveform
tr
toff
10%
90%
tf td(on)
td(off)
Gate Drive Time
VCE(sat)
10%
90%
ton
VGE
IC
VCE
Eon
10%
Eoff
11/11 2016.07 - Rev.A
R1102Bwww.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative and verify the latest specifica-tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
12)
13)
N o t e s