RF GaN Market - OIC · 2018-07-02 · – 2017 LTE deployment, companies, and countries mapping –...
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| Sample | www.yole.fr | ©2018 RF GaN Market Applications, players, devices, and technologies 2018–2023 RF GaN Market
Transcript of RF GaN Market - OIC · 2018-07-02 · – 2017 LTE deployment, companies, and countries mapping –...
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RF GaNMarket
Applications, players, devices, and technologies 2018–2023
RF GaN Market
강태영
oic
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REPORT OBJECTIVES
• Provide an overview of the RF GaN market.
• Analyze different players in different markets, along with their product range and technologies.
• Outline market access—market size evolution from 2017–2023 and technology split.
• Highlight the main technologies in the different applicative markets.
• Explain the needs of different RF markets and the corresponding impact on the needs for different technologies, along with geographical specificities.
RF GaN Market
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REPORT METHODOLOGY
Market segmentation methodology
Market forecast methodology
RF GaN Market
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REPORT METHODOLOGY
Technology analysis methodology Information collection
RF GaN Market
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TABLE OF CONTENTS (1/4)
• Acronyms…………………………………………………………………......6
• Companies cited in this report……………………………………………...7
• Report objectives………………………...……………………………….......8
• Revision of our last GaN RF report……………………...……………….......9
– What’s new?
– Market forecast comparison
• Executive summary…………………………………………………………..12
• GaN RF devices: applications overview……………………………………30
– Applications for GaN devices in RF electronic systems
– Radio frequency band range and applications
– GaN devices: applications roadmap
– RF power applications as a function of frequency and power
– Technology trend in different markets
– What is important for a power amplifier
– RF Power devices: technology breakdown
– RF GaN devices: market size forecast
– RF GaN devices: device number forecast
– RF GaN devices: market breakdown
– Market overview (1/2)
– Market overview (2/2)
• Wireless infrastructure………………….……………………………42
– Cellular technology development
– 2017 LTE deployment, companies, and countries mapping
– Global connections by technology
– 5G technology adoption: operator’s timeline
– Operator’s dilemma
– Cellular network structure
– Future cellular network structure and base stations
– Example of a cellular network mixed with small cells
– How to expand the network capacity?
– Macro cell base station circuit
– BTS power amplifier(1/3)
– BTS power amplifier(2/3)
– BTS power amplifier(3/3)
– Small cell base station circuit
– Why small cells?
– Repeater circuit
– Typical LTE base station and cell tower
– Remote radio head circuit
– Backhaul for Point-to-Point (PtP) and Point-to-Multipoints (PtMP)
– Wireless backhaul circuit
– 5G network requirements compared to 4G
– Key enabling technologies for 5G
– Main trend
– Enhanced mobile broadband
– New radio design
– Radio network evolution
– Future development in telecom base stations
– Base station type and number forecast
– Small cell forecast
– Estimated RF GaN device need in telecom
– Estimated total market for RF GaN device in telecom
– Conclusions
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TABLE OF CONTENTS (2/4)
• Defense………………………………………………………………………..84
– GaN technology’s development history
– GaN application potential in defense market
– Military radar
– Military RF applications and frequency bands
– GaN applications in radar systems (1/2)
– GaN applications in radar systems (2/2)
– GaN applications in EW/IED jammers
– GaN applications in electrical countermeasures
– GaN RF applications in military communications
– Market drivers for GaN RF in defense applications
– Military market impact on GaN industry
– Roadmap for RF transistor volume in defense applications
– Estimated total accessible market for GaN FET in defense
– Defense: GaN product scheme
– Conclusions
• Civil radar & avionics…………………………………………………………99
– Commercial/scientific radar
– Commercial avionics
– Land mobile
– Device development trend in land mobile PA
– Weather radar
– RF GaN transistor volume in NON-military RADAR applications
– RF GaN transistor market size in NON-military RADAR applications
• CATV market…………………………………………………………………………...107
– CATV: the basics
– Market drivers for GaN electronics in CATV (1/3)
– Market drivers for GaN electronics in CATV (2/3)
– Market drivers for GaN electronics in CATV (3/3)
– Evolution of DOCSIS 3.1
– CATV market in geographical terms
– HFC and FTTH comparison
– CATV market evolution:
RF GaN devices: estimated yearly Needs for CATV Market
RF GaN devices: estimated market size for CATV Market
– Conclusions
• Satellite communications market ……………………………………………………...121
– Where do we use GaN in satellite applications?
– Market drivers for GaN RF in SATCOM
– Market drivers for GaN electronics in V-SAT
– Future development in SATCOM market
– GaN implementation in VSAT T&R unit
– RF GAN devices: estimated yearly needs for V-SAT market (units)
– RF GaN devices: estimated yearly needs for SATCOM market (units)
– RF GaN devices: estimated Market size for VSAT market
– RF GaN devices: estimated Market size for SATCOM market
– Satellite communications: GaN RF product scheme
– Conclusions
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TABLE OF CONTENTS (3/4)
• RF energy………………………………………………………….…..130
– RF GaN device for RF energy
– Microwave ovens (1/2)
– Microwave ovens (2/2)
– Plasma lighting
– Estimated yearly needs for RF energy market
– Estimated yearly Market size for RF energy market
– Conclusions
• RF GaN HEMT technology overview………………………………………138
– RF components overview (1/2)
– RF components overview (2/2)
– Power and frequency regions for different semiconductors
– GaN HEMT DEVICE structure
– GaN / SiC / Si / GaAs: material properties
– GaN / SiC / Si / GaAs: power transistor comparison
– GaN’s Added values
– Advantages at the system level for PA, LNA, and RF switch
– GaN MMIC description
– Device life model and activation energy
– Reliability test of today and the difficulties
– GaN HBT for cellphone applications?
• Package for RF GaN……………………………………………………154
– Copper flange presentation
– RF power transistor design
– Why using copper instead of other materials?
– What does “pure copper flange” mean?
– Challenges to face to switch to copper substrate
– Die attach
– Welding for GaN
– Focus on die attach: materials
– Hermetic package
– Hermetic: definition
– Non hermetic: definition
– Construction of a typical RF ceramic package
– Construction of a typical LDMOS package
– Non hermetic plastic package
– RF non-hermetic package drivers
– RF non-hermetic package barriers
– RF package type and hermeticity
– From air cavity to over molded packages
– GaN device package as of 2017
– Driver for plastic package
– Device package trend in the future
– GaN RF packaging roadmap
– Conclusions
• GaN RF devices: industrial landscape………………………………………193
– Major GaN RF players and their device frequency range (1/2)
– Major GaN RF players and their device frequency range (2/2)
– Main GaN RF players and their target applications
– Market landscape
– Mapping: american players for power RF GaN-based devices (1/2)
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TABLE OF CONTENTS (4/4)
– Mapping: american players for power RF GaN-based devices (2/2)
– Mapping: european players for power RF GaN-based devices
– Mapping: asian players for power RF GaN-based devices
– Special focus on China
– Debating between IDM and fabless in the GaN industry
– Global Industrial supply chain GaN
– GaN RF Foundry technology comparison
– Estimate of GaN RF player market share
– Global industrial supply-chain
– RF power industry
– Conclusions
• Special focus on GaN RF technology…………………………………...……210
– Commercially available gan-on-sic devices vs. gan-on-silicon devices
– GaN RF substrate diameter evolution
– GaN-on-silicon vs. gan-on-sic: comparison
– GaN-on-SiC an GaN-on-Silicon market strategies
– Gan-on-sic and gan-on-silicon: Future development scheme
– Competition trend
– Forecast of GaN on SiC/Silicon market size comparison
– Where lies the opportunity?
• General conclusions…………………………………………………………221
RF GaN Market
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Biographies & Contacts
ABOUT THE AUTHORS
Hong LIN
Dr. Hong Lin has worked at Yole Développement since 2013 as a Technology & Market Analyst. She specializes in compoundsemiconductors and provides technical and economic analysis. Before joining Yole Développement she worked as an R&DEngineer at Newstep Technologies, heading up development of PECVD cold cathodes for nanotechnology-based visible and UVlamp applications. She holds a Ph.D. in Physics and Chemistry of Materials.
Zhen Zong
Zhen Zong works at Yole Développement as an Analyst for Power Electronics and Compound Semiconductors. He graduatedfrom INSA Lyon with an Engineering degree in Material Sciences, specializing in semiconductor devices and micro/nanotechnologies.
RF GaN Market
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Aethercomm, Alcatel-Lucent, Ampleon, Anadigics, AT&T, Bell Laboratory, Cisco, China Mobile,
China Telecom, China Unicom, Cree, Dynax, Dowa, EADS, Epigan, Ericsson, Eudyna, Freiburg/
Univ. Ulm/Fraunhofer IAF, Filtronic, Freescale, Fujitsu, Global Communication Semiconductors,
Hittite/Keragis, Huawei, II-VI Inc, IMEC, IMECAS Infineon, Intel, IQE, KDDI, KT, LG Plus, Lockheed
Martin, M/A-COM, Microsemi, Mitsubishi Chemical, Mitsubishi Electric, Motorola, NEC, Nitronex,
Norstel, Nokia Networks, Northrop Grumman, NTT, NTT DOCOMO, NXP, OMMIC, Powdec,
Qorvo, Qualcomm, RFHIC, RF Lambda, RFMD, Samsung, SICC, SiCrystal, SK Telecom, Softbank,
Sprint, STMicroelectronics, Sumitomo Electric, Enkris Semiconductor, Raytheon, TankeBlue, Telstra,
Thales, Thales III-V Lab, T-Mobile, Toshiba, Triquint, UMS, Unity Wireless, Verizon, Vodafone, WIN
Semiconductors, Wolfspeed, and ZTE...
LIST OF COMPANIES MENTIONED IN THIS REPORT
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RF POWER DEVICES: MARKET SIZE FORECAST
Overall market size increases from $380Mto $1.3B.
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DIFFERENT SEGMENT OF MARKET
Different markets and drivers for RF
Power development are presented
and explained.
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RF POWER TRANSISTOR DESIGN
Standard package used for LDMOS device.
We present here an example of RF device for base-station application.
Standard design of the module uses a substrate (called substrate or flange depending on the players, or even heatsink if no other heatsink is used).
Window frame and lid are made of ceramics (high thermal conductivity and electrical isolation).
Die attach material and process depend on material used for substrate.
die
Cap (Ceramic)
Ceramic frameEpoxy glue
Lead
Metal flange
Soldered or
sintered region
Package Opening side–
Optical View
Wire
bondingCu/Mo/Cu
substrate
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GAN RF PACKAGING ROADMAP
Both materials and design are evolving in RF power package
2016 2020 2025 and beyond
Flange Mateiral
Die attach
B CA
Package Case
MateiralA B C
B
A C
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BUSINESS MODE COMPARISON
IDM vs. Foundry
• Today leading players are IDMs, people would love
to have a production line inside of the company in
order to have better control of the process and
yield.
• However in the future, with the maturity of the
technology and the pressure of production
capacity, we might be seeing more foundries.
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RF POWER INDUSTRY
Supply chain and events
LDMOS foundry, enter GaN on
Si power business in 2016
GaN foundry
TriQuint
and RFMD
merged in
2014
US Department
of Defense
investment in
GaN
technology
Former TriQuint
employeesAcquired by
ADI in 2017Acquired by
ADI in 2015
Nitronex acquired
by MACOM in
2014
Licensed GaN on Si
for power application
IR acquired by
Infineon in 2014
MACOM sues Infineon
for GaN on Si IP
Ericsson’s
LDMOS
business
MACOM was licensed GaN on SiC
from GCS but later ended.
GaN foundry
GaN foundry
Partnership
NXP and Freescale
merged in 2015
Former
NXP RF
power unit
becomes
Ampleon
LDMOS
foundry
GaAs foundry
GaAs foundry
Joint
Venture
Acquired
in 2008
GaN on Si
power foundry
GaN on Si
packageGaN Power
LDMOS
GaAs
+
GaN RF
RF GaN Market
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GLOBAL INDUSTRIAL SUPPLY-CHAIN
Different business model exist in the RF power market.
Wafers Epiwafers
A
F
E
C
H
O
I
K
M
X
L
Z
Y
J
W
GPure device foundries
V
6
7
8
11
5
4
10
9
B
D
1
2
U
T
13
14
15
16
17
18
*non-exhaustive list
12
P
Q
R
S
19
*There’s no direct supply
correspondence between
different columns!
N
Material providers Devices SystemsPA Modules
Microsemi
Fabless
design
house3
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GAN ON SILICON & GAN ON SIC COMPARISON
The comparison of GaN-on-Si and GaN-on-SiChas been one of the most concerned questions in GaN RF industry.
GaN
On
SiC
GaN
On
Silicon
RF GaN Market
