Precision Equipment Companyeuvlsymposium.lbl.gov/pdf/2009/pres/O_ET-02_Miura_Nikon.pdfNIKON...
Transcript of Precision Equipment Companyeuvlsymposium.lbl.gov/pdf/2009/pres/O_ET-02_Miura_Nikon.pdfNIKON...
Slide 12009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Nikon EUVL Development Progress UpdateNikon EUVL Development Progress Update
Takaharu MiuraKatsuhiko Murakami, Hidemi Kawai, Yoshiaki Kohama, Kenji Morita, Yukiharu Ohkubo
2nd Development DepartmentDevelopment HeadquartersPrecision Equipment Company
NIKON CORPORATION
Precision Equipment Company
NIKON CORPORATIONPrecision Equipment Company
Slide 22009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
OutlineOutline
Nikon EUVL roadmap
EUV1 Imaging / Overlay capability
EUVL technology readiness
EUV HVM tool
Summary
NIKON CORPORATIONPrecision Equipment Company
Slide 32009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura Slide 3
(nm)
Design Rule (ITRS)
2007 2010 20162013
16
22
32
45
6545 nm HP
DPHVM 32 nm HP
EUVLNA 0.25
Water Immersion
Water Immersion
Double Patterning
Double Patterning22 nm HP
EUVLNA >0.30
EUVL HVM
EUVL HVM
Nikon Lithography RoadmapNikon Lithography Roadmap
Resolution = kResolution = k11 NANAλλ
High NAEven EUVL
Shorter WavelengthArF=>EUVL
k1<0.25Double Patterning
EUV HVM Technology
Development
(Tool, source, resist, mask)
EUVL R&D
EUVL is the main candidate for ≤ 22 nm hp.
EUVL
NIKON CORPORATIONPrecision Equipment Company
Slide 42009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Cal. Year 2008 2009 2010 2011 2012 2013 2014ITRS2007
DRAM ½ pFlash ½ pMPU C. Hole
57 nm45 nm 73 nm
50 nm40 nm 64 nm
45 nm36 nm 56 nm
40 nm32 nm 50 nm
36 nm28 nm 44 nm
32 nm25 nm 39 nm
28 nm23 nm 35 nm
R&D programs
NikonExposure tool
Device
EUV1 NA 0.25
Collaboration
Nikon EUV Development RoadmapNikon EUV Development Roadmap
Early Process development
EUVA (Light source)
DRAM 22nm hp Preparation to HVM
EUV HVMNA>0.3
-Device process development-Improvement
For 22nm hp beyondDevelopment & Verification
Continuous collaborative work with customers NA0.25
SELETE (EUV Lithography and Mask Program)
Now
Learning for HVM
NIKON CORPORATIONPrecision Equipment Company
Slide 52009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
OutlineOutline
Nikon EUVL roadmap
EUV1 Imaging / Overlay capability
EUVL technology readiness
EUV HVM tool development
Summary
NIKON CORPORATIONPrecision Equipment Company
Slide 62009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Dynamic exposure- Imaging optimization
10 nm0.8 (OAI capability)
0.25, x1/4
26 x 33 mm2
Illumination SigmaOverlay
NA and Magnification
Field Size
Overlay exposure - Tool optimization
Device test chip patternexposures ongoing.
Sta
tic
expo
sure
Now
EUV1 Development StatusEUV1 Development Status
Customer evaluations & device pattern exposures on going.
NSR front
Learning for HVM
NIKON CORPORATIONPrecision Equipment Company
Slide 72009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Stable overlay performance achieved.
Overlay X
0
10
20
30
40
1 2 3 4 5 6 7 8 9 10 11 12 13 14Wafer #
Ove
rlay
(nm
)
mean+3s(X)3s
Overlay Y
010203040
1 2 3 4 5 6 7 8 9 10 11 12 13 14Wafer #
Ove
rlay
(nm
)
mean+3s(Y)3s
10Overlay X
0
10
20
30
40
1 2 3 4 5 6 7 8 9 10 11 12 13 14Wafer #
Ove
rlay
(nm
)
mean+3s(X)3s
Overlay Y
010203040
1 2 3 4 5 6 7 8 9 10 11 12 13 14Wafer #
Ove
rlay
(nm
)
mean+3s(Y)3s
Overlay Evaluation on Actual Device Structure Overlay Evaluation on Actual Device Structure
Layer 1 ← Layer 2 Layer 2 ← layer 3
Courtesy of Selete
NIKON CORPORATIONPrecision Equipment Company
Slide 82009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
NA 0.25 NA 0.25 Imaging SimulationImaging Simulation (Conv. vs. Dipole)(Conv. vs. Dipole)
Image Quality:Wavelength: 13.5 nm, NA: 0.25,Mask contrast: 1:100, DC-Flare: 11%
σ=0.8
σ=0.4
Conv.
Dipole
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
16 18 20 22 24 26 28 30 32 34 36 38
Half Pitch (nm)
Con
tras
t
Conv Dipole
NIKON CORPORATIONPrecision Equipment Company
Slide 92009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
25nm 24nm 23nm 22nmσ=0.8
25nm 24nm 23nm 22nm
21nm 20nm 19nm 18nm
Conv.
Dipole
σ=0.4
σ=0.8
Refer to “Next Step for Beyond 22nm Node Application Using Full Field Exposure Tool” by K. Tawarayama, et al, on Oct. 20.
NA 0.25 NA 0.25 ImagingImaging Data (Conv. vs. Dipole)Data (Conv. vs. Dipole)Courtesy of Selete
NIKON CORPORATIONPrecision Equipment Company
Slide 102009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
1010
Nikon EUV1 Lines (static exposures)*Ultimate resolution: 26nm HP 32/64 nm line-ends
CDmeas: 25.91nm
LWR: 7.05nm
Esize:17.8mJ/cm2
Vertica
l lines
through HP a
t
best dose/
focus
σ = 0.8
Measured 41nm(drawn 14nm on mask)
σ = 0.8σ = 0.8
NA0.25 Imaging data NA0.25 Imaging data Courtesy of Intel
Refer to poster presentation “Static Test Evaluation of EUV1 Full-Field Exposure Tool” by Y. Shroff, et al.
NIKON CORPORATIONPrecision Equipment Company
Slide 112009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
OutlineOutline
Nikon EUVL roadmap
EUV1 Imaging / Overlay capability
EUVL technology readiness
EUV HVM tool development
Summary
NIKON CORPORATIONPrecision Equipment Company
Slide 122009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Evaluation of EUV Technology ReadinessEvaluation of EUV Technology ReadinessReadiness classification for HVM implementation.Manufacturable solutions exist, and are being optimized.
Manufacturable solutions are known but needing further development.
Manufacturable solutions are not known. Not ready for HVM.
Slide 12
High NA. Fabrication and metrologyNA
EUV1 PO dataFlare
EUV1 PO dataWFEPOPOOpticsOpticsItem Issue Readiness Remarks
PlatformPlatform OverlayOverlay Optics stability Thermal control
Metrology stability Thermal control
Reticle stability Chuck and particle control
ImagingImaging CDU Focus and dose control
ThroughputThroughput PO and IU transmittance Reflectivity and total efficiency
StagesNew platformNo air fluctuation
CoOCoO Optics lifetime Modeling, contamination control
Optics consumable cost Cleaning and refurbishment
NIKON CORPORATIONPrecision Equipment Company
Slide 132009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
22 mm26 mm
WFE: 0.4 nm RMS (average)Min. 0.3nm RMS ~ Max. 0.5nm RMS
Optics: PO ReadinessOptics: PO Readiness
EUV1 PO performance reaching close to HVM requirements.
EUV1 PO: WFE and Flare PerformanceEUV1 PO: WFE and Flare Performance
Slide 13
8% / 8.5%6%EUV1 PO#215% / 16%10%EUV1 PO#1
Kirk flare(estimate/measure)Flare
2µm Kirk pattern in bright field
Mirror polishing status
NIKON CORPORATIONPrecision Equipment Company
Slide 142009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Optics: MetrologySupported by NEDO
CCD
PH
G
PO
Pinhole mask
Gratings
CCDCCD
PH
G
PO
Pinhole mask
Gratings
DTI (digital Talbot interferometry)Development work with Canon
EUV wavefront metrology system (EWMS)
Measured with EUV(EWMS)
Measured with visible lightCorrected with calculation
97.5 mλ RMS(1.32 nm RMS)
154.5 mλ RMS(2.09 nm RMS)
NIKON CORPORATIONPrecision Equipment Company
Slide 152009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Optics: High NA Imaging SimulationOptics: High NA Imaging SimulationDOF (22nm hp), Conv. DOF (22 nm hp), Dipole
DOF (16 nm hp), DipoleDOF (16 nm hp), Conv.
Simulation conditions: Aerial image simulation; Dipole (R=0.2), delta CD +/-10% of CD, Mask CD error +/-3% of CD, Mask contrast 1:100, Flare 8%
22 nm hp22 nm hp
16 nm hp16 nm hp
16nm hp can be achieved with NA>0.3 and off-axis illumination.
NIKON CORPORATIONPrecision Equipment Company
Slide 162009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Optics: NA vs. Number of MirrorsOptics: NA vs. Number of Mirrors
0.30 0.40 0.50
6 mirror system
8 mirror system
8 mirror system(center obscuration)
NA
M7
M8
M7
M8
Design examplesCD=k1λ/NA DOF=λ/NA2
K1
0.59
0.53
0.47
0.41
0.36
0.3016nm
DOF(nm)
840.65NA0.40
670.73NA0.45
540.81NA0.50
110
150
216
0.570.83
0.490.71NA0.30
0.410.590.83NA0.2522nm32nm45nmHP
K1
0.59
0.53
0.47
0.41
0.36
0.3016nm
DOF(nm)
840.65NA0.40
670.73NA0.45
540.81NA0.50
110
150
216
0.570.83NA0.35
0.490.71NA0.30
0.410.590.83NA0.2522nm32nm45nmHP
General issues:1. DOF reduction2. Flare increase3. Transmittance4. Obscuration5. Manufacturing difficulty
6 mirror system with NA >0.3 under study.
NA vs. number of mirrors
NIKON CORPORATIONPrecision Equipment Company
Slide 172009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
1. Long-life anti-oxidation capping layer
2. Carbon contamination modeling
3. Carbon-film suppression and removal using EUV+O2 in-situ cleaning-Oxygen gas introduction under EUV irradiation
can suppress carbon deposition onto mirrors.
4. Experimentation facilities- “New SUBARU” in Himeji (Univ. of Hyogo) - Currently shifted to new SLS facility “SAGA-LS”
in Kyushu for experiments.
CoOCoO: Contamination Control Strategy: Contamination Control Strategy
Zr filter
Folding mirror
Lord lock chamber
Irradiation chamber
Q-MS
SR-beam
Sample
Photo diode
InsideApparatus
SR-beam: SAGASAGA--LSLS BL18Light intensity:70mW/mm2
NIKON CORPORATIONPrecision Equipment Company
Slide 182009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
CoOCoO: : Carbon Carbon CContamination ontamination MModelingodeling
Carbon contamination growth rate depends on photon supply and contaminant material supply.
The lesser of two supplies determines the growth rate.Such a behavior was confirmed with experimental data using a synchrotron source.
rate-determinedby photon supply
ln E (E: illuminance, mW/cm2)
lnV
(V:g
row
th ra
te, n
m/s
)
rate-determinedby contaminant supply
higher pressure
V ∝ E
V = const.
1E-5
1E-4
1E-3
1E-2
1E-1
1 10 100 1000 10000E , illuminance [mW/cm2]
V, g
row
th ra
te [n
m/s
]
C6F14C10H22
Experimental data in SLS(contaminant: 5e–5 Pa)
NIKON CORPORATIONPrecision Equipment Company
Slide 192009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
0.98
0.99
1.00
1.01
0 50 100
Dose/ (J/ mm2)
Refle
ctan
ce re
lative
cha
nge
CH:4e-6Pa without O2
CH:4e-6Pa with O20.99
1.000 50 100
Dose/(J/mm2)
Ref
lect
ance
rela
tive
chan
ge
Cleaning
Hexadecane Oxygen
Mitigation
Ru capping layer
CoOCoO: Carbon Contamination Control: Carbon Contamination Control
Carbon contamination deposition is suppressed by O2 injection.Deposited carbon can be removed by O2 injection.
NIKON CORPORATIONPrecision Equipment Company
Slide 202009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Higher durability to Oxidation
Cap1 Nb2O5 -0.19 ×10-2
2 TiO2 -0.07 ×10-2
3 Cr2O3 0.43 ×10-2
4 CeO2 0.53 ×10-2
5 V2O5 0.59 ×10-2
6 Rh2O3 1.12 ×10-2
7 Mn2O3 2.48 ×10-2
8 RuO2 2.67 ×10-2
9 WO3 2.73 ×10-2
10 C 3.55 ×10-2
(∆R/Ro)/(1kJ/mm2)
9x10-4Pa, H2O 1000J/mm2
0.92
0.94
0.96
0.98
1.00
1.02
1.04
0 500 1000 1500
Dose/(J/mm2)
Rel
ativ
e re
flect
ance
CTiO2V2O5Cr2O3Mn2O3Nb2O5RuO2Rh2O3CeO2WO3
Irradiationchamber
Q-MS
SR-beam
Mirror chamberCarbon coat mirrors
CoOCoO: Anti: Anti--oxidation Capping Layeroxidation Capping LayerNew SUBARU synchrotron facility
Mo/Si multilayer
Capping layerSupported by NEDO
In EUV irradiation test of oxide materials, Nb2O5 and TiO2 showed good durability to oxidation.
NIKON CORPORATIONPrecision Equipment Company
Slide 212009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
CoOCoO: : UVUV Dry Carbon CleaningDry Carbon Cleaning
Before cleaning After cleaning
0%
10%
20%
30%
40%
50%
60%
70%
-80 -60 -40 -20 0 20 40 60 80
Con1ミラー短軸方向の位置 [mm]
反射
率
洗浄前 洗浄後
-
Ref
lect
ivity
Position on mirror [mm]
● : Before cleaning■ : After cleaning
Contaminated mirror recovered its initial reflectivity after UV dry cleaning.
NIKON CORPORATIONPrecision Equipment Company
Slide 222009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
OutlineOutline
Nikon EUVL roadmap
EUV1 Imaging / Overlay capability
EUVL technology readiness
EUV HVM tool development
Summary
NIKON CORPORATIONPrecision Equipment Company
Slide 232009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Specification EUV1 EUV HVMField Size 26 x 33 mm2 26 x 33 mm2
NA and Magnification 0.25, x1/4 >0.3, x1/4
Flare 10 % 5 %
Overlay 10 nm <3 nm
Throughput 5-10 WPH@10W IF,5mJ/cm2
100 WPH@180W IF,10mJ/cm2
EUV Development ScenarioEUV Development Scenario
Basic R&D Learning (Now) Common Platform
ImprovementVerification
FeedbackEUV1Collaborative programs with
customers
EUV HVM(EUV3)
- High throughput and good OL platform
- PO: NA>0.3- Light source:
>180W IF- Maximum optical transmittanceHi-NA3
Small field
Slide 23
EUV1First full-field tool
NIKON CORPORATIONPrecision Equipment Company
Slide 242009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
0
20
40
60
80
100
120
8 9 10 11 12 13 14
# of Mirror
EU
V p
ower
at I
F (W
)
15mJ/cm210mJ/cm25mJ/cm2
50wph
0
10
20
30
40
50
60
70
8 9 10 11 12 13 14
# of Mirror
EU
V p
ower
at I
F (W
)
15mJ/cm210mJ/cm25mJ/cm2
20wph
0
20
40
60
80
100
120
140
160
180
200
8 9 10 11 12 13 14
# of Mirror
EU
V p
ower
at I
F (W
)
15mJ/cm210mJ/cm25mJ/cm2
100wph
Total Number of Mirrors vs. Throughput
Condition;Mirror reflectance: 64%
Shot number: 76 shots
Key issues:Source power improvementOptics efficiency improvement
Throughput EvolutionThroughput Evolution
NIKON CORPORATIONPrecision Equipment Company
Slide 252009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Throughput: HighThroughput: High--efficiency RET efficiency RET
+ Easy- Power loss- Degrade uniformity on reticle
+ No power loss+ No uniformity change on reticle
- Manufacturability
Source
Fly’s eye 1Fly’s eye 2 (Pupil plane)
Pupil apertureConventional fly’s eye mirror with pupil aperture
(EUV1)
RET fly’s eye mirror system (HVM)
Reticle
Reticle
Intensity distribution in pupil
RET Fly’s eye
Source
Fly’s eye 1 Fly’s eye 2 (Pupil plane)
Specially designed RET fly’s eye mirror system minimizes photon loss.Small etendue of source is preferable.
Different concepts under study.
NIKON CORPORATIONPrecision Equipment Company
Slide 262009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Up to EUV Source WS, May 2009
Grazing incidenceMultilayerMultilayerCollector mirror
< 1.3 mmPossible ~ 0.5 mm
(~100 um)210 um (1/e2)Plasma size
500W@plasma50W@IF, duty 100%Increased CE to 3-4%1 hour run
60W@IF burst, CE=2.5%4 hours runMagnetic field DMTDouble pulse
100W @IF 1ms burst, CE=3.0%51 hours run20W@IF, duty 80% 400ms on
EUV power*
-13kWCO2
12 kWCO2
Drive laser power
12 kHzDemonstrated 40 kHz Feasibility of 100 kHz
100 kHz50 kHzRep. rate
DPPSn, Rotating disc
LPPSn, Droplet
LPPSn, Droplet
Type
Philips/XtremeGIGAPHOTONCYMER
* Estimated IF power based on a transmissibility of a collector mirror.
EUV Light Source Status
System integrated performance with long term operation must be demonstrated. Joint requirement: >115W@IF(5mJ/cm2), >180W@IF(10mJ/cm2)
NIKON CORPORATIONPrecision Equipment Company
Slide 272009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
Reticle Particle ProtectionReticle Particle Protection
RSP
1. Reticle in Cassette (RC) in Carrier (RSP200).2. Cassette protects the reticle in load locks.3. Top cover stays with reticle during in-tool handling. 4. Reticle remains in RC in library to protect against vacuum accidents
and contamination.
Reticle
Top Cover
Bottom Cover
Cassette (Reticle Cover)
Dual Pod Concept by Canon and Nikon
SEMI standardization completed.
NIKON CORPORATIONPrecision Equipment Company
Slide 282009 EUVL Symposium @Prague, Czech Republic October 20, 2009 T. Miura
EUVL HVM Development IssuesEUVL HVM Development Issues
Optics improvement− NA, WFE, flare, RET, distortion
Throughput improvement− Optical transmittance− Mirror contamination control− High speed platform
CoO issue− Consumable cost and lifetime
Overlay improvement− Thermal stability, heat rejection
and cooling− Mask and chuck (OPD and IPD)
Facility issues− Light source utility and space