MB39A107EV E1 - Fujitsu · 2004-05-20 · Output current2 2. Evaluation Board Specifications....

Fujitsu ASSP Product

1/20Power Management

MB39A107 Evaluation Board Rev1.0E

Rev 1.0EFebruary,2003

Evaluation board ManualEvaluation board Manual

MB39A107Battery Charger

MB39A107Battery Charger




1.1. Evaluation Board SpecificationsEvaluation Board SpecificationsThe MB39A107 evaluation board is a surface mounting circuit boardof the synchronous rectification type of down conversion circuit.The MB39A107 evaluation board can be set to one cell to four cells. The charging voltage and charging current are controlled from the power supply voltage such as AC adaptors. And, the MB39A107 is ahighly accurate, highly effective battery charger which suppliesthe current up to 4.5A.Moreover, the current amplifier which can set the offset voltage is built-in. The amplifier can be used for the current surveillance of the AC adaptor and the battery.

MIN TYP MAX Unit

12.6V setting 13.6 15 20 V

16.8V setting 17.8 19 25 V

12.6V setting 12.47 12.6 12.73 V

16.8V setting 16.63 16.8 16.97 V

12.6V setting 31 63 126 mV

16.8V setting 42 84 168 mV

SW3=OFF,SW4=OFF 4.3 4.5 4.7 A

SW3=ON,SW4=OFF 2.6 2.7 2.8 A

SW3=OFF,SW4=ON 0.29 0.41 0.53 A

4.6 4.8 5 A

13.1 13.5 13.9 V

Constant voltage 6 9.3 16.8 ms

Constant current 4 6.3 11.5 msSoft-start time

Output current1

Output ripple voltage

Item

Input voltage

UVComp Detect voltage (VCC=H to L)

Output voltage

Output current2

2. 2. Evaluation Board SpecificationsEvaluation Board Specifications




Current detection amplifier (Current Amp1) output pinOUTC1

MB39A107’s GND. This pin is common to GND pin. This pin is only used a monitor around MB39A107’s GND.

SGND

Battery charger system GNDGND

Mode control pin [When SW3=OFF, SW4=OFF]Suspend mode : Ichg ≅ 4.5A

[When SW3=ON, SW4=OFF]Resume mode : Ichg ≅ 2.7A

[When SW3=OFF, SW4=ON]Dead battery mode : Ichg ≅ 0.41A

MODE SW

Reference voltage output monitor pin VREF

Power supply control pin[When SW1=OFF]VCTL-1 = 0V to 0.8V : Standby mode VCTL-1 = 2.0V to VIN : Operation mode

CTL-1

Output voltage from DC/DC converter(EV board)Vo

Input voltage from DC power supply, AC-AdaptorVIN

DESCRIPTIONSPIN name

Current detection amplifier power supply control pin[When SW2=OFF]VCTL-2 = 0V to 0.8V : Standby mode VCTL-2 = 2.0V to VIN : Operation mode

CTL-2

+INE2 Charging current setting pin

VB Output circuit bias output pin

Charging current setting pin for fail safechg_ctl

3. 3. Pin DescriptionsPin DescriptionsFunction table of the Pin terminal




Function table of the DIP Switch4. 4. SwSw InformationInformation

• Connect VIN and GND pin to power supplies(e.g to AC Adaptor).• Put SW into the state of turning off all.

(1) Set up

(2) Confirmation Method•Turn on SW1 and SW2 turn on the power to VIN (power supply) while turned on. •IC operates normally if BATT=16.8V(Typ) is output. •Changing battery charge mode,SW3=OFF SW4=OFF : Suspned modeSW3=ON SW4=OFF : Resume modeSW3=OFF SW4=ON : Dead battery mode

5.5. Setup & Confirmation MethodSetup & Confirmation Method

*: The mode of note PC is shown.

Stand-by

OFF

Operating

Operating

ON

Current detection amplifier power supply control

Operation Control

Function

CTL-22

CTL-11

NameSW

Suspend *Mode

Resume *Mode

Charging current model controlMode SW3

Suspend *Mode

Dead Battery * Mode

Charging current model controlMode SW4

Stand-by




6. 6. Parts Layout BlockParts Layout Block

Board parts block diagram




Board Layout

Top Side

Bottom Side

Inside GND(Layer 2)

Inside VIN(Layer 3)




7. 7. Circuit DiagramCircuit Diagram

GND

VoVIN

GND

VB

R7KOA15mΩ

NECuPA2752

R9KOA0Ω

D2ROHMRB053L-30

sumida 5.2uHCDRH104-100

KOA33mΩ

TDKC3216JB1E225K2.2uF/25V×2

C1 C2

Q1 L1 R8

VSYS

C3 C4

R28

R27

CTL-2

CTL-1

C5

D1DE5PC3

R10KOA0Ω

Q2

TDKC3216JB1E225K2.2uF/25V×3

FQ4JP3

TDK0.47u×2

C12TDK0.47uF

C11TDK0.1uF

C10TDK0.022uF

R30ssm47kΩ

R6ssm100kΩ

ssm200kΩ

ssm100kΩ

R29KOA0Ω

R5ssm200kΩ

UVCOMP13.5V

R4ssm33kΩ

R3ssm47kΩ

R2ssm180kΩ

R1ssm56kΩ

14.57/17.55

C13 C14

D3 D4

ssm100kΩ

R35ssm1kΩ

C19TDK10pF

SW1 SW2

30 29 1928 27 26 25 24 23 22 21 20

1 2 123 4 5 6 7 8 9 10 11

MB39A107C6

SGN

18 17 16

1513 14

R26

OUTC

VREF

+INE2

chg_ctl

C15TDK1.0uF

TDK0.1uF

R13KOA0Ω

R17ssm100kΩ

R23ssm100kΩ

R11ssm51kΩ

R12ssm51kΩ

R16ssm10kΩ

C7TDK6800pF

C8TDK6800pF

R24ssm10kΩ

C9TDK2200pF

R25ssm51kΩ

R14ssm47kΩ

R15ssm12kΩ

SW1 SW2 +INE2 IoOFF OFF 3.71V 4.50AON OFF 2.23V 2.70AON ON 0.34V 0.41A

R20ssm6.2kΩ

R19ssm10kΩ

R18ssm47kΩ

R21ssm18kΩ

R22ssm1.3kΩ

R32KOA0Ω

R31ssm100kΩ

R34ssm20kΩ

R33ssm30kΩ

C16TDK10pF

C17TDK10pF

C18TDK10pF

SW3 SW4

D5ROHMRB053L-30




Compnent Item Specification Vendor package Parts No. RemarkM1 IC MB39A107 FUJITSU FPT-30P-M04 MB39A107Q1,Q2 N-ch FET VDS=-30V,ID=8A(max) NEC SO-8 uPA2752D1 Diode VF=0.4V(max) at IF=2.5A SHINDENGEN SO-64 DEP5PC3D2 Diode VF=0.42V(max) at IF=3A ROHM PMDS RB053L-30D3,D4 Diode VF=0.45(max) at IF=100mA Origin SC-82 FQ4JP3D5 Diode VF=0.42V(max) at IF=3A ROHM PMDS RB053L-30L1 Inductor 10uH　35mΩ 4.4A SUMIDA SMD CDRH104Ｒ-100C1,C2 POSCAP 15uF(25V) SANYO 25TQC15M Not mountingC1,C2 Ceramic condenser 2.2uF(25V) TDK 3216 C3216JB1E225KC3,C4 POSCAP 22uF(20V) SANYO 20TQC22M Not mountingC3,C4,C5 Ceramic condenser 2.2uF(25V) TDK 3216 C3216JB1E225KC6,C11 Ceramic condenser 0.1uF(50V) TDK 1608 C1608JB1H104KC7 to C9 Ceramic condenser 2200pF(50V) TDK 1608 C1608JB1H222KC10 Ceramic condenser 0.022uF(50V) TDK 1608 C1608JB1H223KC12 Ceramic condenser 0.47uF(25V) TDK 3216 C3216JB1E474KC13,C14 Ceramic condenser 0.47uF(50V) TDK 3216 C3216JB1H474KC15 Ceramic condenser 1uＦ(25V) TDK 3216 C3216JB1E105KC16 to C17 Ceramic condenser Not mountingC18 to C19 Ceramic condenser 10pF(50V) TDK 1608 C1608JB1H100KR1 Resistor 56kΩ(0.5%) ssm 1608 RR0816P563D Not mountingR2 Resistor 180kΩ(0.5%) ssm 1608 RR0816P184D Not mountingR3 Resistor 47kΩ(0.5%) ssm 1608 RR0816P473D Not mountingR4 Resistor 33kΩ(0.5%) ssm 1608 RR0816P333DR5 Resistor 200kΩ(0.5%) ssm 1608 RR0816P204DR6 Resistor 100kΩ(0.5%) ssm 1608 RR0816P104DR7 Resistor 15mΩ(1%) KOA SL1 SL1TTE15LOFR8 Resistor 33mΩ(1%) KOA SL1 SL1TTE33LOFR9,R10,R13 Jumper 0Ω KOA 3216 RK73Z1JR11,R12 Resistor 51kΩ(0.5%) ssm 1608 RR0816P513DR14 Resistor 47kΩ(0.5%) ssm 1608 RR0816P473DR15 Resistor 30Ω(0.5%) ssm 1608 RR0816P303DR16,R24 Resistor 330kΩ(0.5%) ssm 1608 RR0816P334DR25 Resistor 51kΩ(0.5%) ssm 1608 RR0816P513DR17,R23,R26,R28 Resistor 100kΩ(0.5%) ssm 1608 RR0816P104DR18,R30 Resistor 47kΩ(0.5%) ssm 1608 RR0816P473DR19 Resistor 10kΩ(0.5%) ssm 1608 RR0816P103DR20 Resistor 24kΩ(0.5%) ssm 1608 RR0816P243DR21 Resistor 18kΩ(0.5%) ssm 1608 RR0816P183DR22 Resistor 1.3kΩ(0.5%) ssm 1608 RR0816P132DR27 Resistor 200kΩ(0.5%) ssm 1608 RR0816P204DR29 Jumper 0Ω KOA 3216 RK73Z1JR31 Resistor 100kΩ(0.5%) ssm 1608 RR0816P104D Not mountingR32 Jumper 0Ω KOA 3216 RK73Z1J Not mountingR33 Resistor 30Ω(0.5%) ssm 1608 RR0816P303D Not mountingR34 Resistor 20kΩ(0.5%) ssm 1608 RR0816P203D Not mountingR35 Resistor 10kΩ(0.5%) ssm 1608 RR0816P103D Not mountingSW1 to SW4 DIP SW 4 poles MATSUKYU DMS-4HPIN Wiring terminal Mac-Eight WT-2-1

8. 8. Circuit Parts ListCircuit Parts List

16.812.6Vo[V]

Remove0R29 [Ω]

4cell3cellBattery

Resistor value at 3cell or 4cell




(1) Output voltage

　　　 Vo(V)= (R26+R27+R28)/R26 × 4.2 ≅ 16.8(V)

　　　　**1 Resistor R26-R28 connected with OUTD pin (pin 17) is recommended to use one　　　　　　　 to be able to ignored internal FET ON-resistance( 35Ω, 1mA) . 　　　　**2 In case of using 3cell Battery Mode, put Jumper on R29 allocation.

(2) Suspend mode charging current

Io max(A) = R18/(R18+R19+R20) ×VREF / (R8×25) ≅ 4.5(A)

(3) Resume mode charging current

Io (A) = R18//R21/(R18//R21+R19+R20) ×VREF / (R8×25) ≅ 2.7(A)

(4) Dead Battery mode charging current

IDEAD(A) = R18//R22/(R18//R22+R19+R20) × VREF / (R8×25) ≅ 0.41(A)

(5) Soft-Start Time

Constant voltage mode soft-start timets(s) = 0.42 × C10(µF) ≅ 9.2(ms)

Constant current mode soft-start timets(s) =R18/(R18+R19+R20) × VREF/10(µA) × C10(µF) ≅ 6.3(ms)

(6) Triangular wave oscillation frequency

fosc(kHz) = 23500/R30(kΩ) ≅ 500(kHz)

9.9. InitializationInitialization




10. 10. Reference DataReference Data(1)Conversion efficiency

IO vs. efficiency (Constant Voltage mode)

707274767880828486889092949698

100

0.01 0.1 1 10IO(A)

effic

ienc

y(%

)

19V

25V

17.5V

VO vs. efficiency (Constant Current mode)

707274767880828486889092949698

100

0 2 4 6 8 10 12 14 16VO(V)

effic

ienc

y(%

)

19V

25V

17.5V




(2) Dropping characteristicIBATT vs. VBATT(Vin=19V)

0

2

4

6

8

10

12

14

16

18

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IO(A)

VO(V

)

SW3=OFFSW4=OFF

SW3=ONSW4=OFF

SW3=OFFSW4=ON




(3) Switching waveform

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (µs)

Vs(V) 2

1

0

Vs

OUT2

OUT2(V)10

5

0

OUT1OUT1(V) 20

10

0

VIN=19VSetting Io=2ASW3=OFFSW4=OFF

Constant voltage mode

Constant current mode

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (µs)

Vs(V) 2

1

0

Vs

OUT2

OUT2(V)10

5

0

OUT1OUT1(V) 20

10

0

VIN=19VSetting Vo=10VSW3=OFFSW4=OFF




(4) Soft-start/discharge operation waveform

CTL-2

OUTC1

CTL-1

0 2 4 6 8 10 12 14 16 18 20 (ｍs)

Vo(V)

15

10

5

0

OUTC1(V) 5

0

CTL-2(V) 5

0

VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF

Vo

CTL-1(V) 5

0 CTL-2

OUTC1

CTL-1

0 2 4 6 8 10 12 14 16 18 20 (ｍs)

Vo(V)

15

10

5

0

OUTC1(V) 5

0

CTL-2(V) 5

0


Vo

CTL-1(V) 5

0

CTL-2

OUTC1

CTL-1

0 2 4 6 8 10 12 14 16 18 20 (ｍs)

Vo(V)

15

10

5

0

OUTC1(V) 5

0

CTL-2(V) 5

0


Vo

CTL-1(V) 5

0 CTL-2

OUTC1

CTL-1

0 2 4 6 8 10 12 14 16 18 20 (ｍs)

Vo(V)

15

10

5

0

OUTC1(V) 5

0

CTL-2(V) 5

0


Vo

CTL-1(V) 5

0

CTL-2

OUTC1

CTL-1

0 2 4 6 8 10 12 14 16 18 20 (ｍs)

Vo(V)

15

10

5

0

OUTC1(V) 5

0

CTL-2(V) 5

0


Vo

CTL-1(V) 5

0

CTL-2

OUTC1

CTL-1

0 2 4 6 8 10 12 14 16 18 20 (ｍs)

Vo(V)

15

10

5

0

OUTC1(V) 5

0

CTL-2(V) 5

0


Vo

CTL-1(V) 5

0




Board Photograph

FET

11. 11. Parts Select MethodParts Select Method

InductorOutput Smoothing Condenser

Flyback Diode

Charging Current Setting Sense Resistor




Vin=25V(Max),Vo=16.8V,Io=4.5A,fosc=500kHz1．N-ch MOS FET(uPA2752(NEC) )

Main side VDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ(Typ), Qg=10nC(Typ)Synchronous rectification sideVDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ(Typ), Qg=10nC(Typ)

Drain current : Peak valueThe peak value of the drain current of FET should be in the rated current value of FET.When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula.

For 16.8V output

The parts selection method is written in the following.

Main side

Synchronous rectification side

Vin-Vo2L

ton

≥≥≥≥ 4.5+-62 ×××× 5.2 ×××× 10

25-16.8××××

500 ×××× 10 31

×××× 0.672

ID ≥≥≥≥ Io+

≥≥≥≥ 5.56A

Vo2L

toff

≥≥≥≥ 4.5+-62 ×××× 5.2 ×××× 10

16.8××××

500 ×××× 10 31

×××× (1-0.672)

ID ≥≥≥≥ Io+

≥≥≥≥ 5.56A




2．Inductor(CDRH104R-100 : SUMIDA)10µH(tolerance : ±30%)，rated current= 4.4A

L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.

Load current value which becomes continuous current condition.

Ripple current : peak valueThe peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula.

Ripple current : peak to peak valueWhen the peak to peak value of the ripple current is assumed to be ∆IL, ∆IL is obtained by thefollowing formula.

L ≥≥≥≥2(Vin‐‐‐‐Vo））））

Ioton

2 ××××(25-16.8））））4.5

×××× 0.672××××500 ×××× 10

13≥≥≥≥

≥≥≥≥ 4.90µµµµH

Io ≥≥≥≥2LVo

toff

2 ×××× 5.2 ×××× 1016.8 ××××

500 ×××× 101

3 ××××(1-0.672)-6≥≥≥≥

≥ 1.06A

Vin-Vo2L

ton

≥≥≥≥ 4.5 +-62 ×××× 5.2 ×××× 10

25-16.8××××

500 ×××× 10 31

×××× 0.672

IL ≥≥≥≥ Io+

≥≥≥≥ 4.05A

Vin-VoL

ton

=-65.2 ×××× 10

25-16.8××××

500 ×××× 10 31

∆∆∆∆IL =

≅ 2.12A

×××× 0.672




3． Charge pump Diode(FQ4JP3 : ORIGIN) VR = 30V, IO = 200mA, IFSM = 1AVF = 0.41V at IF=100mA

VR should be a value which satisfies the input voltage enough. →30VEfficiency is somewhat rising in low leak schottky barrier diode by the use but even if the signal diode isused, it is enough. The one of low VF is recommended to be used.Moreover, the condenser for charge pump use the one which is very bigger than the gate capacitance on main side FET. 0.1µF to 1µF is recommended to be used.

R8 = 　　　　　　　　　　　　　　　　　　　　　　　　

≅≅≅≅ 33.1(mΩΩΩΩ)

25 ×××× I1　　　　　　　　　　　　

+INE2 　　　　　　　　　　　　　　　　　　　　　　　　

= 　　　　　　　　　　　　　　　　　　　　　　　　25 ×××× 3.5　　　　　　　　　　　　

2.90　　　　　　　　　　　　　　　　　　　　　　　　

4． Charge Current Setting Sense Resistor(SL1TTE33LOF : KOA) 33mΩ

When the +INE2 terminal voltage sets charge current to 3.5A by 2.90V, R8 is obtained by the following formula.




For 12.6V output

Vin=20V(max),Vo=12.6V,Io=4.5A,fosc=500kHz1．N-ch MOS FET(uPA2752(NEC) )

Main side VDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ(Typ), Qg=10nC(Typ)Synchronous rectification sideVDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ (Typ), Qg=10nC(Typ)

Drain current : Peak valueThe peak value of the drain current of FET should be in the rated current value of FET.When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula.

Main side

Synchronous rectification side

Vin-Vo2L

ton

≥≥≥≥ 3.5+-62 ×××× 5.2 ×××× 10

20-12.6××××

500 ×××× 10 31

×××× 0.63

ID ≥≥≥≥ Io+

≥≥≥≥ 5.40A

Vo2L

toff

≥≥≥≥ 3.5+-62 ×××× 5.2 ×××× 10

12.6××××

500 ×××× 10 31

×××× (1-0.63)

ID ≥≥≥≥ Io+

≥≥≥≥ 5.40A




2．Inductor(CDRH104R-5R2 : SUMIDA)5.2µH(tolerance : ±30%)，rated current= 5.5A

L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.

Load current value which becomes continuous current condition.

Ripple current : peak valueThe peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula.

Ripple current : peak to peak valueWhen the peak to peak value of the ripple current is assumed to be ∆IL, ∆IL is obtained by thefollowing formula.

L ≥≥≥≥2(Vin‐‐‐‐Vo））））

Ioton

2 ××××(20-12.6））））4.5

×××× 0.63××××500 ×××× 10

13≥≥≥≥

≥≥≥≥ 4.14µµµµH

Io ≥≥≥≥2LVo

toff

2 ×××× 5.2 ×××× 1012.6 ××××

500 ×××× 101

3 ××××(1-0.63)-6≥≥≥≥

≥≥≥≥ 897.0mA

Vin-Vo2L

ton

≥≥≥≥ 4.5 +-62 ×××× 5.2 ×××× 10

20-12.6××××

500 ×××× 10 31

×××× 0.63

IL ≥≥≥≥ Io+

≥≥≥≥ 5.40A

Vin-VoL

ton

=-65.2 ×××× 10

20-12.6××××

500 ×××× 10 31

∆∆∆∆IL =

≅≅≅≅ 1.79A

×××× 0.63




All Rights Reserved.The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU

sales representatives before ordering.The information and circuit diagrams in this document are presented as examples of semiconductor device

applications, and are not intended to be incorporated in devices for actual use.Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams.FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and

other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.).

CAUTION:Customers considering the use of our products in special applications where failure or abnormal operation may

directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.

MB39A107EVB

EV board part No. EV board version No.

MB39A107EV Board Rev 1.0

Note

12. 12. Ordering InformationOrdering Information

MB39A107EV E1 - Fujitsu · 2004-05-20 · Output current2 2. Evaluation Board Specifications....

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