Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.
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Transcript of Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.
![Page 1: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/1.jpg)
Introduction to Wafer fabricationProcess
Presented byAsst.Prof. Dr. Rardchawadee Silapunt
![Page 2: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/2.jpg)
Outlines
Clean room 1
Wafer Fab Process
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Outlines
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Clean room 1
![Page 4: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/4.jpg)
Clean Room @ TMEC
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![Page 5: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/5.jpg)
It took time to install cleanroom
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PLAY MOVIE
![Page 6: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/6.jpg)
Outlines
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Wafer Fab Process
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Processing line @ TMEC
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Furnace
Plasma CVD
PhotolithographyCleaning Process
Implanter
Dry EtchingSputtering
Metrology
Down to 0.5μm Technology
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Overview to Lithography process
What is Lithography Process?
The word come from the Greek “Lithos” and “Graphia”
Lithos = Stones , Graphia = to write
It means “ Writing on stones”.
In Semiconductor, stones are Silicon wafers and our patterns are written with a light-sensitive polymer called “Photoresist”
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Overview to Lithography process
9 Steps of Lithography process.
1. Wafer preparation
2. Coat with Photoresist
3. Prebake, Softbake
4. Align and Exposure
5. Post-Exposure Bake (PEB)
8. Etch or Implant
6. Development
7. Postbake, Hardbake
9. Photoresist strip
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Photolithography Problem
Light Diffraction is occur during photolithography process.
OPC patterns are used to reduce the error in photolithography process.
(a) (b)
(c) (d)
Without OPC With OPC
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How to patterning circuit
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Wafer
Processing - Film Deposition - Photolithography- Etching- Implantation
Integrated Circuit (IC)
![Page 12: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/12.jpg)
Processing line
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p-type wafer
p-type
Silicon Wafer
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Processing line
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Film Deposition
Initial oxidation: O2/H2 (Thickness: 420 nm)
p-type
SiO2
![Page 14: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/14.jpg)
Processing line
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p-type
Photoresist (PR)
Coater Stepper Developer
Photolithography
![Page 15: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/15.jpg)
PR is made up of a resin R, the photoactive compound M, the solvent S, and component appears during exposure which are exposure products P.
The exposure products generated by the reaction of M with UV light.!!
Applying Beer’s Law, the absorption coefficient is then,
M0 = initial PAC concentration (non-exposed)A = bleachable absorption coefficients of Dill parametersB = Non-bleachable absorption coefficients of Dill parameters
Other non-bleachable components of the PR such as dye are added to B
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Photoresist Characteristic
Processing line
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T(0)
T(∞)
Where several assumptions are made in solving this differential equation and I x t is the
optical dose. If D is the resist thickness, the Dill parameters can be measured by:
is the initial slope of the transmittance vs dose curve
is transmittance at theair-resist interface
Two transmittance curves for Kodak 820 resist 365 nm. The curves are for a convection oven post-apply bake of 30 minutes at the temperatures shown
T(0) is the transmittance of the unexposed resist, and
T(∞) is the transmittance of the completely exposed resist
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Processing lineDill Paramaters of Photoresist
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Simulation of Plasma Etching
Processing line
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Etching
p-type
Dry etch oxidePhotoresist (PR)
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Processing line
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Etching
Isotropic Etch Directional Etch Vertical Etch
Directionality of Etcing Process
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Processing line
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Etching
Wet Etching
Two Kinds of Etching Method
Dry Etching- by Wet chemical solution- Isotropic etching
- by Plasma- Anisotropic etching
Vertical E/R ~ Horizontal E/R Pure Chemical Reaction High
Selectivity CD Loss or Gain
Vertical E/R >> Horizontal E/R Ion assisted Relatively low
Selectivity No CD bias
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Processing line
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Implantation
p-type
Photoresist (PR)
n-well implantation : Phosphorus
![Page 21: Introduction to Wafer fabrication Process Presented by Asst.Prof. Dr. Rardchawadee Silapunt.](https://reader035.fdocument.pub/reader035/viewer/2022062423/56649f225503460f94c3b716/html5/thumbnails/21.jpg)
CMP removes material from uneven topography on a wafer surface until a flat (planarized) surface is created.
CMP combines the chemical removal effect of an acidic or basic fluid solution withthe "mechanical" effect provided by polishing with an abrasive material.
Processing line
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Chemical Mechanical Planarization (CMP)
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Processing line
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How to patterning a CMOS !!!
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