1

IGBT

1 2017129

2

1. 2. 3. 4. 5. SOASafe Operating Area6. 7. 8. 9. 10. IGBT

11. 802008324

B. Jayant Baliga, Fundamentals of Power Semiconductor Devices, Springer Science + Business Media, 2008.

3

IGBT

MOSFET200V

IGBTMOSFET

4

IGBT

P-

+P

MOSFET

N

+P

+N

1d

5

IGBT

MOS

SOA/300V

MOSFET

6

IGBT PiN

VG VDSVT MOSFET MOSFET PNP Tr PNP Tr

GV

CEI

CEV

MOSFET

7

IGBTRsP-

RS 0.7V NPN

RS

NPN Tr

IGBT PNP Tr PNP TrMOSFET

( )

( )NPNPNPRSNPN

E

RSEECB

ENPNCEPNPB

II

IIIIIIIII

+=

+====

1

,,1

1

2121

2211

NMOSFETNPN

PNP

RS

1CI

2EI

PNP

NPN

21 CB II =

2BI

RSI

1EI

1EI

8

=BVCEOP+N-P-

N-d1LP

V

PD

m LqN

Vd += 21

9

N-P-J2P-

MOSFETP-N+

DMOSDMOS

P+N-J1J2J1

AC DC

N1.52Ex. NDB10161017cm-31015m

10

IGBT

IGBT

)cm(103.1 2122

=

=qENdD CSBB

2J

1J

2J

1J

3J

3J

+P

P+N

N

2d

1d

1d

+P

P+N

NN

DB DB P+

11

PiNMOSFET PNPMOSFET

102103

12

IGBT PiNMOSFET

P-

+P

MOSFET

N

+P

+N

PiNCI

13

PiN MOSFET

( ) ( )

( ) ( )( )

( )

=

=

=

+

=

aLd

aa

M

kTqV

a

aa

a

TGOXns

CHC

aia

CF

LdeqkT

LdLd

qkT

V

eLd

LdLdLdF

VVZCLI

LdFnqWZDdI

qkTV

a

M

for 8

3

for 3

tanh25.01tanh

2ln2

2

2

4

PiN MOSFET

dd1/2WIGBTZMOSFET

14

Fd/LaPiN

1.E-03

1.E-02

1.E-01

1.E+00

0.1 1 10

d/La

Fd/

La

F

d/La1

15

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0.0 0.5 1.0 1.5 2.0 2.5

V F V)

J

C

A/cm

2

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

Ron,s

pm

cm

2

Jc(IGBT)

Jc(max)

Ron,sp(IGBT)

Ron,sp(ideal DMOS)

IGBTI-VPiNMOSFET

600V

IGBTTj =200Ron,sp MOSFET IGBT

16

IGBT MOSFET

ePNP

PNPh II

=

1

ePNP

ehE

I

III

=

+=

11

( )a

TPNP

Llcosh1

=

::aL

l

MOSFET

PNP

P-

+P

N

+P

+N

hI

eI

EI

CI

17

MOSFET

( )( )

( )TGOXnsCHCPNP

aia

CF VVZC

LILdFnqWZD

dIqkTV

+

=

1

2ln2

PiN MOSFET

NPiN

MOSFET

VFMOSFET VFPiNMOSFET

MOSFET IC MOSFETPiNMOSFET IC MOSFET

( ) CPNP I1

18

MOSFET2

MOSFETIeMOSFET:

( )2, 211

TGCH

oxns

PNPsatC VVL

ZCI

=

( )TGCH

oxns

PNPms VVL

ZCg

=

11

( )22 TGCH

oxnse VVL

ZCI =

msIGBT msMOSFET PNP0.5

19

MOSFETPNPPNP

N

( ) DCS

Da

TPNP qNVdWdl

Ll 2 ,

cosh1

11 ===

( )( )[ ] eCaD

S

a

a

PNP

e

CC

C

C

IVLqNLl

LlIdV

ddVdI

r 22 21coshsinh

11

=

==

l

20

IGBT

PNP

l

DW

l

P-

+P

N

+N

+P

21

IGBT

1d

P-

+P

N

+N

N

2d J1

J2

+P

N

PNP

J1

La

22

HLaaHLHL

DLLLp

dxpd === ,022

2

( )[ ]( )a

a

p

a

LdLxd

qDJLxp

1

1

coshsinh

2)( =

0

01

0)0( ,)0()()0( ,0)(

pJJJxpppdp

np

====

( )ap

a

xp

LdqDJLp

dxdpqDJ

10

0

tanh2

2

=

==

23

( )

== 1cosh

12 1

2

0

1

ap

ad

S LdDJLpdxqQ

P-

+P

N

+N

+PIGBT

0p

x

PiN

0x=00x=0

pn

pn

1d

p

24

pn

pn

=

=

=

+

+

ai

D

p

aNP

D

iN

NNP

Ld

nN

qDJL

qkTV

Nnp

pp

qkTV

12

2

00

0

tanh2

ln

,ln

V 8.0+NPV

ACCJFETCHMOSFET

MOSFETMNPIGBT

VVVVVVVV

++=++= +

,

25

N

0d1

( )( )( ) dx

dppq

kTqp

JxEpn

pn

pn

1)(

+

+

=

)()( xpxn =

( )( )( )

+

+

+

=apn

pn

aapn

pM L

dLd

Ld

qkTV 111 sinhln

2tanhlncosh

2

np JJJ +=

:V 1.0MV

26

MOSFET

MOSFET

JFET

( )( )TGoxns

CellCHPNPCH VVC

WJLV

=

1

( ) ( )( )0

0

221

WXLWWXJV

PG

CellPPNPJFETJFET

+=

( ) ( )( )TACCGoxnA

CellPGPNPACC VVC

WXLJKV

= 21

IGBT::

P:0

Cell

P

WWX

JFET VJFET

JFET W0

VJFET JFET

27

P-

+P

N

+N

+P

2hI eI1hI

SR

1J

3J

2J

Ie MOSFET Ih1J1J2

Rs J3

Rs Vbi

NPN

PNPNPN = 1

28

PNP

PNP TrT

NPNP Tr

J1N NDB

/ N

( )aT Llcosh1

=

Ih1 Rs

=

DB

AE

N

nE

nE

pBE N

NWL

DD

N

N

29

NPN

NPN Tr

P+P-J3

P+P-P+N+P-N+

N+MOSFET N+

MOSFETP+

IGBT

30

P+

( )21 ESPESBPNPCellbi

CL LRLRWVJ

++=

( )

( )

Cell

CLCL

ESPESBPNP

bi

SPNP

biCL

hPNPhC

biSh

ESPESBS

ZWIJ

LRLRZV

RVI

IIIVRI

ZLRLRR

=

+==

==

+=

+

+

21

21

1

21

::

P-

+P

N

+P

2EL 1EL

EL

+N

CellW

SBR

1hI

+SPR

1ESB LR

31

P+

P-

+P

N

+P+N

N

P-

+N

+P

+P

P+N+P-

32

P-

N

+P+N +N

+P

+P

1hI2hIeI

2

1/2

33

N VT

P-

N

+P+N

+P

P- VT

34

0

200

400

600

800

1,000

1,200

1,400

0 200 400 600 800 1,000 1,200 1,400

tox

JC

L

(A/cm

2)

4

APoxT NtV

( )TGoxnsoxCH

CH VVZtLR

=

35

IGBT

+

=WG

GPNPCh LL

LII 1GLWL

P-

1hI1hI

+=

G

WG

ESBPNP

bi

LINCL

LLL

LRZV

I

1

,

ZLRR ESBS 1=

( ) GESBPNPbi

WG

LINCLLINCL LLR

VLLZ

IJ

1

,,

=+

=

36

IGBT

( )[ ] ( )[ ]122, ln42

EWWWWGSBPNP

biCIRCL LLLLLLR

VJ+

=

GL

P-

1hI

1hI

WL

( )( )2

22

1 44

WG

WWGPNPCh LL

LLLIJ+

+=

== 1

ln221 EW

WSBL

LLSB

S LLLRdr

rRR W

EW

( )( )[ ] ( )[ ]122

2

,

ln48

EWWWWG

WG

SBPNP

biCIRCL

LLLLLLLL

RVI

++

=

37

IGBT

CIRCLSQCL JJ ,, 21 CDCD II

49

/

1CI

21.0 CI

1t

2CI

2t11.0 CI tt

PNP

2121 ttII CC >