Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류...
Transcript of Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류...
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Heinrich Rudolf Hertz
(1857 – 1894)
proved the existence of the
electromagnetic waves theorized
by James Clerk Maxwell's
electromagnetic theory of light.
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Guglielmo Marconi
(1874 – 1937)
1909 Nobel Prize in Physics
with Karl Ferdinand Braun
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Lee de Forest (1873 – 1961)Audion
Father of Radioelectronic amplifying vacuum tube
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Kilby (1958)
Noyce(1959)
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Jack St. Clair Kilby(1923 – 2005)
realization of the first integrated
circuit while working at Texas
Instruments (TI) in 1958.
2000 Nobel Prize in Physics
Robert Norton Noyce(1927 – 1990)
Mayor of Silicon Valley,
co-founded Fairchild
Semiconductor in 1957
and Intel Corporation in 1968
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종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m]
금속
은 1.59
반도체
탄소 3~60×10-5
구리 1.72 게르마늄 1~500×10-3
알루미늄 2.82 실리콘 0.1~60
텅스텐 5.6
부도체
유리 1010~1014
철 9.71 고무 1013~1015
니크롬 110 석영 7.5×1017
납 22 나무 108~1011
수은 98 황 1015
[예제]구리의밀도는 8.93g/cc이다.그리고구리의분자량은 63.5g/mole이다.
구리원자 1개당자유전자가 1개라면구리내의자유전자의밀도는얼마인가?
(답) 자유전자의 밀도는 단위 체적 안에 존재하는 자유전자의 수이다.
단위 체적이 몇 mole인지 계산하여 아보가드로 수를 곱해주면 된다.
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물질의 전기적 특성
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Octet rule
-an atom tends to bond with other atoms until it has eight electrons
in its outmost shell, similar to the stable electron configuration of
the noble gas elements
-exceptions: H; 2 Li; 2 Be;4 B;6
P, S; more than 8 electrons by incorporating d orbitals
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Ionic Bonds
Na + Cl Na+ Cl-
Li + F Li+ F-
Covalent Bonds
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Covalent Bonds in Silicon
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n-type semiconductor
전자가 캐리어(carrier)
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p-type semiconductor
정공(hole)이 캐리어(carrier)
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에너지 밴드 갭(Energy band gap)의 형성
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pn 접합의 공간전하영역(depletion region)
접합근처에는 전자와 정공이재결합하여 이온만 존재하는공간이 생김 (공간전하영역)
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pn 접합의 공간전하영역(depletion region)
접합근처에는 전자와 정공이재결합하여 이온만 존재하는공간이 생김 (공간전하영역)
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p-n Junction : Reverse Bias
공간전하영역이 넓어져전하이동이 불가능
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p-n Junction : Forward Bias
공간전하영역이 좁아져전하이동이 가능
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I-V characteristics of p-n junction
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LED: Light Emitting Diode
전자와 정공이재결합할 때 빛이 발생
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Bipolar Transistor Biasing
-Base는 폭이 좁음-Emitter에서 이동하는전자는 Base를 거쳐Collector로 이동
-Collector에 양의 전압-Base 전류에 의해Collector 전류 조절
-전류제어소자
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Current amplification
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Junction Transistor Biasing
-Gate의 전압에 의해channel의 폭이 조절되어전류가 조절됨
-전압제어소자
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MOS FET (Field Effect Transistor) 구조
강대원(姜大元, 1931-1992)
1960년, Martin Atalla와 공동으로MOSFET를 최초로 개발
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MOSFET Biasing
-Gate의 전압에 의해channel의 폭이 조절되어전류가 조절됨
-전압제어소자
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Transistor amplifier circuit
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Switching Circuit (NOT Gate)
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저항(Resistor)
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축전기(capacitor)
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트랜지스터(transistor)
![Page 41: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/41.jpg)
다이오드(diode)
![Page 42: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/42.jpg)
Photolithography process
![Page 43: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/43.jpg)
IC Manufacturing Process(Example)
![Page 44: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/44.jpg)
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![Page 48: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/48.jpg)
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반도체 소자 및 IC의 제작
1. 회로의설계2. Lithography 과정3. Etching 과정4. Metalization
5. Molding(Packaging)
6. Testing
![Page 50: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/50.jpg)
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Hynix
![Page 52: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/52.jpg)
10nm process
![Page 53: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/53.jpg)
![Page 54: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/54.jpg)
![Page 55: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/55.jpg)
OXIDATION
![Page 56: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/56.jpg)
![Page 57: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/57.jpg)
![Page 58: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/58.jpg)
DEVELOPMENT (lithography III)
![Page 59: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/59.jpg)
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ION IMPLANTATION(Doping Process)
![Page 61: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/61.jpg)
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METALLIZATION
![Page 63: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/63.jpg)
EDS TEST
![Page 64: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/64.jpg)
SAWING
![Page 65: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/65.jpg)
WIRE BONDING
![Page 66: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/66.jpg)
MOLDING
![Page 67: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/67.jpg)
FINAL TEST
![Page 68: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/68.jpg)
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Operational Amplifier (OP Amp 741)
![Page 71: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/71.jpg)
Digital gate의 개념
![Page 72: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/72.jpg)
2진수
디지털 Logic
-신호가 5.6V이상이면 1의 상태, 그렇치 않은 경우 0의 상태
![Page 73: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/73.jpg)
십진수 36은 2진수로는100100
1바이트는 8 비트이는 2진수 8자리이므로, 16진수 두 자리로 표현 가능.따라서 16진법이 많이 사용됨.
![Page 74: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/74.jpg)
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American Standard Code for Information Interchange; ASCII, 7bit encoding
![Page 77: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/77.jpg)
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[예제] de Morgan 정리 를 증명해 보자.
A B
0 0 1 1
1 0 0 0
0 1 0 0
1 1 0 0
이것도 증명해 보라.
![Page 79: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/79.jpg)
A A
0 1
1 0
NOT-gate (CMOS)
NOT-gate
![Page 80: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/80.jpg)
A B Output
0 0 1
0 1 0
1 0 0
1 1 0
NOR-gate
A B Output
0 0 0
0 1 1
1 0 1
1 1 1
OR-gate
NOR-gate
![Page 81: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/81.jpg)
NAND-gate
A B Output
0 0 1
0 1 1
1 0 1
1 1 0
A B Output
0 0 0
0 1 0
1 0 0
1 1 1
NAND-gate
AND-gate
![Page 82: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/82.jpg)
Examples
![Page 83: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/83.jpg)
Digital computer
![Page 84: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/84.jpg)
A B Output
0 0 0
0 1 1
1 0 1
1 1 0
![Page 85: Heinrich Rudolf Hertz - KNUbh.knu.ac.kr/~ilrhee/lecture/modern/chap3.pdf · 2017-11-13 · 종류 물질 비저항[10-8Ω-m] 종류 물질 비저항[Ω-m] 금속 은 1.59 반도체](https://reader033.fdocument.pub/reader033/viewer/2022042803/5f4a30a1135af11cf2350f2e/html5/thumbnails/85.jpg)
Half adder
Full adder
1
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4 bit adder
2진법: 1111+1111=1111010진법: 15+15=30
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1 bit memory
Set Reset Q -Q
1 0 1 0
0 1 0 1
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Clock Data Q
1 1 1
1 0 0
D Flip Flop
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4 bit register
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CCD(Charged Coupled Device)
1969: Boyle, Smith
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Willard Boyle(1924 –2011), George Smith (1930- )
2009년노벨물리학상
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-입사하는 빛을 전하로 바꾸고,
이를 디지털 컨버터(digital converter)에 전달하는 장치
-CCD는 p형 반도체 위에 산화층과 전극을 구성한 것
-전극의 배열(array)이 2차원의 전면을 덮고 있다. 3개의 전극이
하나의 픽셀(컬러 영상에서 적색, 녹색, 청색의 필터와 함께)을 구성
-입사 빛으로 광전효과에 의해 전자 생성.
-전극에 +전압을 인가하면 생성된 전자들이 전극 쪽으로 이동
-p형 반도체의 정공들은 밑으로 밀려 전극 아래에는 전자들만
존재 하는 양자우물(quantum well)형성.
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-각 전극에서 생성된 전자들을 디지털 컨버터로 이동.
-디지털 컨버터는 이 전자들을 모아 디지털 신호로 바꾸어 영상을 구성
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Light Emitting Diode
나카무라 슈지(노벨상 수상자)
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FET
MOSFET을최초로개발한한국인
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Microprocessor
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정류기 IC
증폭기 IC
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