H 2 1 2 < 1. Rekombinasjon via tilstand i bandgapet.
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Transcript of H 2 1 2 < 1. Rekombinasjon via tilstand i bandgapet.
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h21
2 < 1
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Rekombinasjon via tilstand i bandgapet
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Spreading of a ’spike’ of electrons by diffusion
t1 < t2 < t3
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Dn
(cm2/s)
Dp
(cm2/s)
μn
(cm2/Vs)
μp
(cm2/Vs)
Si 35 12.5 1350 480
Ge 100 50 3900 1900
GaAs 220 10 8500 400
Diffusjonskonstanter og mobiliteter ved 300 K i intrinsiske materialer (jfr ’Streetman’ Table 4-1)
0.0259 V
0.0256
0.0259
0.0260
0.0263
0.0250
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Current entering and leaving a volume ΔxA
Kontinuitetslikningen!!
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= p0 + δp(x)
δp(x)
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RIE
CFC
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Deponering av Al via sputtering
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Deplesjonsone
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-V0
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+-
W
Figure 5.15 (a): Minority carrier distributions on the two sides of the transition (depletion) region for a forward-biased junction. The figure provides also
definitions of distances xn and xp measured from the transition (depletion) region edges.
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I = Ip + In = konstant
W
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Avalanche (Lavin) gjennombrudd
Figure 5.21: Electron-hole pairs generated by impact ionization; (b) a single ionizing collision by an incoming electron and (c) primary, secondary and tertiary collisions.
(b) (c)
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Ge Si GaAs GaAsP
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(Diffusjon)
Rekombinasjon & generasjon
Jeppson
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Vakuumnivå
Schottky kontakt på n-type halvledere
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Schottky kontakt på p-type halvledere
Vakuumnivå
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Ohmske kontakter
n-type
m < s
p-type
m > s
Figure 5.43
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Figure 5.42
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