Glass 재료의세정및...
Transcript of Glass 재료의세정및...
-
Glass
:
: 2006. 2. 10
:
-
1. &
2. Surface Tech.
3. Glass
(1)
(2)
Glass
-
- Frost Etching
- Etching (Roughness & thickness)
-
, FPD ( Semiconductor, FPD cleaning Chemical)
TCE / System( Water based precise cleaning system substitution for TCE)
wafer/
( Wafer/Glass etching cleaning agent for Hydro fluoric acid)
( Aluminium precision etchant)
ALDC
( ALDC surface Treatment agent substitution for Nitric acid)
( Pickling inhibitor)
.
-
Surface Tech.
: (Oil & )
, ( )
- - 3 .
: , carbon particle
. .
: , ,
.
&
: . (),
(Anodizing),
(Chromate).
Substrate
MeOXOil
particle
-
(Alkali) :
: ,
, , .
(R-COO)3C3H5 + 3NaOH 3RCOONa() + C3H5(OH)3
(Emulsification) :
: (O/W), (W/O)
(Solvent) :
: . .
I.C (/25) Cl-
(/25)
SEM/EDS
( : 2/)
35 1,300~1,450 4,000
TCE 28 800~900 2820
1.3 130 90
Oil
(x30)
(x30)
(x30)
vs vs (sus304)
-
(x200) (x200)
KOH based solution
10 ~ 20 %
50 ~ 60
3 ~ 5 min
or
Wafer/Glass
glass (UV-Vis spectrum) glass
AfterBefore
40.422.9
Wavelength (nm)
400 500 600 700 800
Tran
smit
tan
ce (
%)
70
80
90
100
Before
After
-
: , ( HF, HNO3, HCl, H2SO4, )
, . ,
( : STS HF+HNO3) , (Substrate) inhibitor
(), accelator() . ,
(Me MeOx)
.
[ Eo(v) ]
Eo Eo
Sn2+ Sn4+ + 2e- + 0.15 v Al Cu3+ + 3e- - 1.66 v
Cu Cu2+ + 2e- + 0.337 v Cr Cr2+ + 2e- -0.60 v
Fe2+ Fe3+ + 3e- + 0.771 v Ni Cu2+ + 2e- - 0.23 v
Co2+ Co3+ + e- + 1.82 v Zn Zn2+ + 2e- - 0.763 v
Au Au3+ + 3e- + 1.50 v Pb Pb2+ + 2e- - 0.126 v
Substrate
Multi layer Oxide
Substrate
Oxidation
Ka
(Ka)
H2SO4 2.4X106
HF 1010
HBr 109
HCl 107
HNO3 200
HClO4 1010
-
Substrate
Metal Oxide
Substrate Etching
: . Etching
.
Acid activation
or Etching
Substrate : particle
, Etching
.
Thin Metal Oxide (MexOy)
Substrate
Substrate
Substrate
Particle
Substrate Substrate
Etching
-
Simulation
( )
(
)
(Beam projector
)
EDX
Sub
42Ni Alloy
Metal Oxide
(NiOx + FeOy)
Sub
Sub
Cr
Sub
Sub
Glass
(Cr, Ti)
Sub
-
GLASS GLASS
GLASS
SiO2 Substrate
OH OH OHOH
Hydrophilic
(HF)
Mechanism : 4HF(l) + SiO2(s) SiF4(g) + 2H2O3SiF4 + 3H2O 2H2SiF6(s) + H2SiO3(s)
(HF) HF Glass Etchant
(HF)
-
SEM
(x200)
HF Glass Etchant
Glass Image
Ra=0.01 Ra=0.005
H2SO4 based glass etchantH F
-
Glass Frost Etching process
Etching Before After
HCl based solution
20 ~ 30
10 ~ 20 s
HF vs HCl based frost etching
HCl based glass etchantH F
-
1966. 8 LG TV 40 . CRT, LCD, EL
OLED, PDP, LED wide screen(7:1870 X 2200mm) ,
.
Etching glass
FPD(Flat Panel Display)
HF & Organic Acid based Glass Etchant Glass
Etchant Glass (0.6 T)
10 % (55% HF) Organic Acid based
Glass etchant
30 30
100, 200, 300 min 100, 200, 300 min
(8,9)
1
-
HF vs Organic Acid based Etchant(Formula 1) Glass
Dipping Time
0 min
0.6 T
100 min
0.5 T
0.5 T
100 min
677
514
538
0.0 24.0 48.0 72.0 96.0 120.0[m]
0.50 m
-1.00
0.00
1.00
2.00
3.00
4.00
[m]
NanoFocus AG
Roughness
Profile
Ra=0.002
Ra=0.060
Ra=0.010
0.0 126.0 252.0 378.0 504.0 630.0[m]
3.00 m
-9.00
-3.00
3.00
9.00
15.00
21.00
[m]
NanoFocus AG
Roughness
Profile
0.0 126.0 252.0 378.0 504.0 630.0[m]
3.00 m
-9.00
-3.00
3.00
9.00
15.00
21.00
[m]
NanoFocus AG
Roughness
Profile
ImageThickness RoughnessEtchant
0.6T Glass
HF
Formula 1
-
Dipping Time
200 min
0.4 T
0.4 T
200 min
418
444
0.0 126.0 252.0 378.0 504.0 630.0[m]
8.00 m
-8.00
8.00
24.00
40.00
56.00
72.00
[m]
NanoFocus AG
Roughness
Profile
Ra=0.480
Ra=0.135
0.0 126.0 252.0 378.0 504.0 630.0[m]
4.00 m
-8.00
0.00
8.00
16.00
24.00
32.00
[m]
NanoFocus AG
Roughness
Profile
ImageThickness RoughnessEtchant
HF
Formula 1
HF vs Organic Acid based Etchant(Formula 1) Glass
-
Dipping Time
300 min
0.3 T
0.3 T
300 min
371
344
Ra=0.349
0.0 126.0 252.0 378.0 504.0 630.0[m]
4.00 m
-12.00
-4.00
4.00
12.00
20.00
28.00
[m]
NanoFocus AG
Roughness
Profile
Ra=0.076
0.0 126.0 252.0 378.0 504.0 630.0[m]
4.00 m
-8.00
0.00
8.00
16.00
24.00
32.00
[m]
NanoFocus AG
Roughness
Profile
HF
Formula 1
ImageThickness RoughnessEtchant
HF vs Organic Acid based Etchant(Formula 1) Glass
-
Frost etching :
: PDP, LCD,
Glass/Wafer
-
1. 1)
a. light oil(, ) > or type
b. medium oil(, ) -> or
c. heavy oil(, ) -> or
2) , , force control
2. 1)
a. : < <
b. , : <
c. ,
:
3. (Si-OH) ,
.
Etching rate .
4. SYSTEM ,
.