GAN ICs and Wireless Charging Intro
Transcript of GAN ICs and Wireless Charging Intro
…personal
…portable
…connected
Dialog Semiconductor
Charging Technology Day
11 November 2016, London
© 2016 Dialog Semiconductor
Dialog Semiconductor – Charging Technology Day, 11 November 2016
Forward Looking Statement
2
This presentation contains “forward-looking statements” that reflect management’s current
views with respect to future events. The words “anticipate,” “believe,” “estimate, “expect,”
“intend,” “may,” “plan,” “project” and “should” and similar expressions identify forward-looking
statements. Such statements are subject to risks and uncertainties, including, but not limited to:
an economic downturn in the semiconductor and telecommunications markets; changes in
currency exchange rates and interest rates, the timing of customer orders and manufacturing
lead times, insufficient, excess or obsolete inventory, the impact of competing products and
their pricing, political risks in the countries in which we operate or sale and supply constraints.
If any of these or other risks and uncertainties occur (some of which are described under the
heading “Risks and their management” in Dialog Semiconductor’s most recent Annual Report)
or if the assumptions underlying any of these statements prove incorrect, then actual results
may be materially different from those expressed or implied by such statements. We do not
intend or assume any obligation to update any forward-looking statement, which speaks only
as of the date on which it is made, however, any subsequent statement will supersede any
previous statement.
Mark Tyndall
Senior Vice President, Corporate Development & Strategy
3 © 2016 Dialog Semiconductor
Dialog Semiconductor – Charging Technology Day, 11 November 2016
A New Power Technology
Agenda
Wireless Charging Introduction
Dialog Semiconductor – Charging Technology Day, 11 November 2016
GAN: A New Power Technology
5
• A semiconductor technology to be increasingly used
for power electronics
• GAN HEMT, enhancement mode power FETS, the
fastest & most efficient power transistors, critical to
power designs
• 10-100x faster switching speed, lower on resistance
• Smaller and lower cost power transistors
Smaller faster and more efficient
GAN: attractive volume market,
complementary to our current Power
Management & Power Conversion
technologies, opportunity to differentiate
So
urc
e
Dra
in
Gate
Silicon substrate
GAN
Dialog Semiconductor – Charging Technology Day, 11 November 2016
GAN, why now?
6
GaN
Transitioning to a standard foundry
• GAN transitioning from “boutique” or research
compound semiconductor fabs to mainstream
• Strategic partnership with TSMC for past 2 years,
Dialog’s first products in 2016
• 6 “ inch wafers, 650 volt process
• Not just a FET switch, pioneering together true
monolithic integration
• Qualifying above and beyond the highest reliability
standards
Dialog Semiconductor – Charging Technology Day, 11 November 2016
Dialog SmartGaNTM
&
Optimized
analog and logic
The world’s fastest
power switch
DA8801 Fully Integrated
GaN Half Bridge
Ga
N
GaN
7
Integration the Dialog way
Q
QSET
CLR
S
R
SmartGaNTM integration means ease of use, lower cost, and higher performance
Dialog Semiconductor – Charging Technology Day, 11 November 2016
Significant SAM Expansion For Dialog
8 2020 Dialog
Traditional SAM
2020 Dialog
SAM with
Integrated GAN
$8.3B
$9.8B
~ A $7 Billion
discrete market
today
~ 20% transition to Integrated
GAN solutions by 2020
Sources: IDC 2016, IHS 2015, Gartner 2015, GFK 2016, Dialog Internal
SmartGan™
SmartGan™
SmartGan™
SmartGan™
8
Dialog Semiconductor – Charging Technology Day, 11 November 2016
Smartphone Adapter Challenge
9
Higher power adapters, smaller form factor, maintaining BOM cost
Increasing Activity
Demands Trend
Multi-Core
Processors
Greater Battery Capacity
BUT
1500 mAh to >3000 mAh
More power (current)
required to charge
battery
Application
Processor
Maintaining the
adapter small form factor
for increased power rating
Dialog Semiconductor – Charging Technology Day, 11 November 2016
GAN Value Proposition: Mobile Adapters
10
Higher efficiency
• Cut power losses by ½, increase
efficiency to ~ 94%
Power density
• Wall adapters that are ½ the size
• More power in the same form
factor or shrink adapter size
Lower costs
• Integrates over 30 components monolithically
Complete Dialog solutions
• One supplier for all controllers and GaN, optimized for performance and cost
Shrink transformer
Eliminate discrete
switches
Shrink or eliminate
snubbing and filtering
Dialog Semiconductor – Charging Technology Day, 11 November 2016
The world’s first GaN power IC family
11
DA8801: Monolithic 650V Half Bridge
• Dialog DA8801 half bridge integrated IC sampling to key OEMs today
• Dialog’s GaN solutions are scalable to meet a wide range of increasing power
requirements
• From smartphones to computing to longer term server
DA8801
Smartphones &
Tablets Notebooks and PCs
Servers &
Infrastructure
25W (today) 45W (2017) 65W 100W – 1kW
Dialog Semiconductor – Charging Technology Day, 11 November 2016 12
Digital
Regulation
Controller Sync Rec
Controller
AC
(from the wall)
5V-12V OUT
• Additional GAN half bridge (#4) in active
clamp configuration, more than doubles
our IC $ content value in a portable
adapter
Complete Next Generation Adapter Platform
DA8801 Integrated GaN Half Bridge
Increased adapter content
(to the phone)
# 1 # 2
# 3
# 4
Dialog Semiconductor – Charging Technology Day, 11 November 2016
SmartGaNTM Wall-to-Battery Platform
13
GaN solutions are part of Dialog’s most complete power platform,
focused on smaller size, faster charging, and high efficiency
DA8801
GaN Power
IC
• The first
optimized
monolithic
half bridge
Smartphone adapter Smartphone USB Type-C
wire and
connector
Digital PSR
Controllers
• Digital
platform
High Efficiency
Handheld
Chargers
• Proprietary high
efficiency
chargers ICs for
smartphones and
tables
Rapid Charge
Controllers
94% efficient, 40% smaller, 15W/in3 98% efficient
>91% efficiency from wall to battery
• Meets
Qualcomm
QC, MediaTek
Pump
Express,
Samsung
AFC
Achieving absolutely best in class end to end efficiency
Dialog Semiconductor – Charging Technology Day, 11 November 2016
Conclusion: GaN is Ready
14
• GaN going mainstream, capacity becoming available
• GaN adds significant market SAM expansion to Dialog
• First SmartGaNTM solutions are available now from Dialog Semiconductor,
expected production start in 2HF 2017
With GaN
Without
GaN
a single ubiquitous wall
adapter for PC and smartphone
Mark Tyndall
Senior Vice President, Corporate Development & Strategy
15 © 2016 Dialog Semiconductor
Dialog Semiconductor – Charging Technology Day, 11 November 2016
Resonant Inductive Coupling Charging – Qi -
Why Energous? A disruptive RF wireless charging technology
16
VERSUS
• New uncoupled wireless RF charging, providing true wire-free mobile power
• Scalable (0.5watt to 10watt)
• Charging multiple devices over millimetres to meters
• Smallest footprint, miniature antennas on existing circuit board (no coils), cost effective
• Targeting both transmitter and receiver platforms
• IoT, wearables, PC, smartphones, headphone, automotive
10x10 mm 3x3 mm
QFN
Tiny QFN chip
and antenna
Many components
bulky coils
RF Charging
Dialog Semiconductor – Charging Technology Day, 11 November 2016
• Exclusive supplier of Energous WattUP ICs
• Leveraging Dialog’s world-class operations & sales
• Accelerating customer adoption
• Strategic investor $10M , full warrant coverage
• Further Dialog SAM expansion
• Complementary technologies driving further sales
– Dialog Bluetooth in receivers and transmitters
– Dialog power management (PMIC)
– Dialog AC/DC Rapid Charge in transmitter
Strategically Aligned Energous, key terms
17
Source: Statista, IDC, ABI, IHS, Gartner 2016
Million Units
Wireless Receivers
2018 TAM
…personal
…portable
…connected
…personal
…portable
…connected
© 2016 Dialog Semiconductor
18
Powering the Smart Connected Future
www.dialog-semiconductor.com
Dialog Semiconductor – Charging Technology Day, 11 November 2016