First GaN membrane FBAR structures · AA transmission-14-13-12-11-10-9-8-7-6 6.285 GHz-12.372 dB...
Transcript of First GaN membrane FBAR structures · AA transmission-14-13-12-11-10-9-8-7-6 6.285 GHz-12.372 dB...
![Page 1: First GaN membrane FBAR structures · AA transmission-14-13-12-11-10-9-8-7-6 6.285 GHz-12.372 dB DB(|S(2,1)|) AA11 Resonance at 6.3 GHz was observed ; values for Q>1000 have been](https://reader034.fdocument.pub/reader034/viewer/2022050303/5f6bbae0eafbc63f083ceffe/html5/thumbnails/1.jpg)
GaN membrane supported series connection of two FBAR structures (test structures)
First GaN membrane FBAR structures(series connection of 2 FBARs)
The thickness of the membrane was 2.2µm
A. Muller, D. Neculoiu, D. Vasilache, D. Dascalu, G. Konstantinidis, A. Kosopoulos, A. Adikimenakis, A. Georgakilas, K. Mutamba, C. Sydlo, H.L. Hartnagel, A. Dadgar, “GaN micromachined FBAR structures for microwave applications”, Superlatices & Microstructures, 40, 2006, pp426-431
IMT-Bucharest and FORTH-Heraklion in the frame of the FP6 “AMICOM“ NoE
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GaN FBARs (1) 500 nm (GaN) +280nm (buffer) thin membrane supported
FBAR structure based on GaN micromachining
•50nm thin Mo metallization
•GaN/Si wafers from NTT AT Japan
Before membrane
manufacturing
Top view; bottom illumination
IMT and FORTH March 2008
Top view; top+ bottom illumination
Top view top illumination
Resonance at 4.6 GHz has been observed
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GaN FBARs (2)
300 nm (GaN) +200nm (buffer) thin membrane supported FBAR structure based on GaN micromachining
50nm thin Mo metallization
GaN/Si wafers from NTT AT Japan
IMT and FORTH, July 2008
Final structure (top and bottom view)
Mobility costs for common work in FORTH
labs have been supported by MIMOMEMS Project
![Page 4: First GaN membrane FBAR structures · AA transmission-14-13-12-11-10-9-8-7-6 6.285 GHz-12.372 dB DB(|S(2,1)|) AA11 Resonance at 6.3 GHz was observed ; values for Q>1000 have been](https://reader034.fdocument.pub/reader034/viewer/2022050303/5f6bbae0eafbc63f083ceffe/html5/thumbnails/4.jpg)
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5Frequency (GHz)
AA reflection
-12-11-10-9-8-7-6-5-4-3-2-10
DB(|S(1,1)|)AA11
DB(|S(1,1)|)AA
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5Frequency (GHz)
AA transmission
-14
-13
-12
-11
-10
-9
-8
-7
-6
6.285 GHz-12.372 dB
DB(|S(2,1)|)AA11
Resonance at 6.3 GHz was observed ; values for Q>1000 have been extracted from experimental data.
IMT and FORTH, July 2008
S parameter measurements
Potential applications for GaN FBARs working in the GHz frequency range:
-high Q filters for 4 G mobile phone technology
-integrated gas sensors
GaN FBARs (3)Mobility costs for
common work in FORTH labs have been supported
by MIMOMEMS Project
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- 340 nm (GaN) +200nm (buffer) thin membrane supported FBAR structure based on GaN micromachining - 50nm thin Mo metallization GaN/Si wafers from NTT AT Japan
IMT and FORTH
Top view with top illumination Bottom view with top illumination
ε=Δc/co=1.9*10-3Maximum deflection 2.7μm
WLI
XRD
6.3 GHz resonance on a GaN FBAR obtained by micromachining of GaN/Si
A. Müller, D. Neculoiu, G. Konstantinidis et al. “6.3 GHz Film Bulk Acoustic Resonator Structures Based on a Gallium Nitride/Silicon Thin Membrane” Electron Devices Letters , August 2009, pp799-801
Microwave characterization, deflection measurements, stress and material analysis could be performed in IMT with the new purchased equipments
Q=1130
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SAW resonators on GaN/Si with fingers and interdigits 250nm wide (up) and 150nm wide (down) patterned in IMT on the new “E-Line” equipment
PMMA 200nm thick metaization Ti/Au 100nm thick
GaN/ Si from Azzuro Magdeburg ( 1μm thin GaN layer)
GaN SAW structures manufactured using nanolithography
250nm
150nm 150nm
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5.8 6.3 6.8 7.3 7.4Frequency (GHz)
SAW_GAN_150 nm
-41
-40.5
-40
-39.5
-39
-38.5
-38
S21
Para
met
er [d
B]
7.062 GHz-40.612 dB
Best results reported up to now on GaN are at about 1 GHz
7 GHz rezonance on a SAW structure manufactured on GaN/Si
IMT- FORTH 20095.8 6.3 6.8 7.3 7.4
Frequency (GHz)
SAW_GaN
-40
-39
-38
-37
-36
-35
-34
ATE
NU
ATI
ON
[dB
]
6.982 GHz-39.177 dB
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AlN/Si SAW structure resonating at 5.03 GHz
4.6 4.8 5 5.2 5.4frequency, GHz
-70
-65
-60
-55
-50
-45
-40
S21,
dB
D. Neculoiu, A. Müller, G. Deligeorgis, A. Dinescu, A. Stavrinidis, D. Vasilache, A. Cismaru, G. E. Stan and G. Konstantinidis. Submitted to publication Electronic Letters
IMTBucharest-FORTH Heraklion 2009
AlN layer deposited at NIMP -Bucharest
Fingers and interdigits 250nm wide processed at IMT
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Reconfigurable band-stop filterIMT-LAAS
Photo of the manufactured reconfigurable band stop filter for 60GHz Experimental (Exp) and simulated (IE3D)
results for the reconfigurable band stop filter
A Takacs, et al Proc MME 2009
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Metallic nanostructures (process development)
The process combines : 2D and 3 D Electon Beam Litography in a PMMA bi-layer, metal depozition and lift-off
Metalic nanostructures for plasmonics and for nanoelectrodes
Metallic master for photonic crystals (φ << 100 nm)
Metallic master for high aspect ratio grating obtained by EBL in PMMA by-layer, metal deposition and lift-off
IMT-FORTH Heraklon Greece
Applications:-Plasmonics-Photonic crystals-Master for replication of polymeric optical structures
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Replication techniques for micro and nano-optical
components
resist
SiO2 Si
replica
polymer
mold
master
The techniques combine 2D and 3 D optical electon beam litography in a resist bi-layer, lift-off, and replication processes: cast molding, replica molding, nanoimprint.
a) b)Lenses in epoxy resin obtained by replica molding with a master obtained
by EBL in a) a thin layer of PMMA -950K layer; b) double PMMA layer (φ~150 nm, h ~200-300 nm).
Difraction grating line 8 µm
Difraction grating line 8 µm
Microfluidic channels in PDMS width ~ 250 nm
Antireflective layer obtained by replication of a metallic master (φ < 100 nm , H ~250 nm)