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April 1999

FDS6961A

Dual N-Channel Logic Level PowerTrenchTMMOSFET

General Description Features

Absolute Maximum Ratings TA= 25oC unless other wise noted

Symbol Parameter Ratings Units

VDSS

Drain-Source Voltage 30 V

VGSS Gate-Source Voltage 20 V

ID Drain Current - Continuous (Note 1a) 3.5 A

- Pulsed 14

PD

Power Dissipation for Single Operation (Note 1) 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

TJ,T

STGOperating and Storage Temperature Range -55 to 150 C

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W

RJC

Thermal Resistance, Junction-to-Case (Note 1) 40 C/W

FDS6961A Rev.C

3.5 A, 30 V. RDS(ON)= 0.090 @ VGS= 10 VR

DS(ON)= 0.140 @ V

GS= 4.5 V.

Fast switching speed.

Low gate charge (2.1nC typical).

High performance trench technology for extremely low

RDS(ON)

.

High power and current handling capability.

SOT-23 SuperSOTTM-8 SOIC-16SO-8 SOT-223SuperSOTTM-6

These N-Channel Logic Level MOSFETs areproduced using Fairchild Semiconductor'sadvanced PowerTrench process that has beenespecially tailored to minimize the on-stateresistance and yet maintain superior switchingperformance.

These devices are well suited for low voltageand battery powered applications where lowin-line power loss and fast switching arerequired.

S1

D1

S2G1

SO-8

D2D2

D1

G2

FDS

6961

A

pin 1

1

5

7

8

2

3

4

6

1999 Fairchild Semiconductor Corporation

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Electrical Characteristics ( TA= 25OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS= 0 V, I D= 250 A 30 V

BVDSS/TJ Breakdown Voltage Temp. Coefficient ID= 250 A, Referenced to 25oC 25 mV/oC

IDSS Zero Gate Voltage Drain Current VDS= 24 V, VGS= 0 V 1 A

TJ

= 55C 10 A

IGSSF Gate - Body Leakage, Forward VGS= 20 V, VDS= 0 V 100 nA

IGSSR

Gate - Body Leakage, Reverse VGS

= -20 V, VDS

= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250 A 1 1.8 3 V

VGS(th)/TJGate Threshold Voltage Temp. Coefficient I

D= 250 A, Referenced to 25 oC -5 mV/oC

RDS(ON) Static Drain-Source On-Resistance VGS= 10 V, I D= 3.5 A 0.076 0.09

TJ =125C 0.11 0.155

VGS

= 4.5 V, ID= 2.8 A 0.107 0.14

ID(ON)

On-State Drain Current VGS

= 10 V, VDS

= 5 V 14 A

gFS Forward Transconductance VDS= 15 V, I D= 3.5 A 6 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS= 15 V, VGS= 0 V,f = 1.0 MHz

220 pF

Coss Output Capacitance 50 pF

Crss

Reverse Transfer Capacitance 20 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time VDS

= 15 V, ID= 1 A 3 6 ns

tr

Turn - On Rise Time VGS

= 10 V , RGEN

=6 11 22 ns

tD(off)

Turn - Off Delay Time 7 14 ns

tf Turn - Off Fall Time 3 6 ns

Qg Total Gate Charge VDS= 15 V, I D= 3.5 A, 2.1 4 nC

Qgs

Gate-Source Charge VGS

= 5 V 0.8 nC

Qgd Gate-Drain Charge 0.7 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current 1.3 A

VSD

Drain-Source Diode Forward Voltage VGS

= 0 V, IS= 1.3 A (Note 2) 0.73 1.2 V

Notes:

1. RJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC

is

guaranteed by design while RCA

is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDS6961A Rev.C

c. 135OC/W on a minimum

mounting pad.b. 125

OC/W on a 0.02 in

2

pad of 2oz copper.a. 78

OC/W on a 0.5 in

2

pad of 2oz copper.

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FDS6961A Rev.C

0 1 2 3 4 50

3

6

9

12

15

V , DRAIN-SOURCE VOLTAGE (V)

I

,DRAIN-SOURCECURRENT(A)

DS

D

3.5V

3.0V

4.0V

V = 10VGS6.0V

4.5V

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 0 25 50 75 100 125 1500.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (C)

DRAIN-SOURCEON-RESISTANCE

J

R

,NORMALIZED

DS(ON)

V = 10VGS

I = 3.5AD

Figure 3. On-Resistance Variation with

Temperature.

1 2 3 4 50

2

4

6

8

V , GATE TO SOURCE VOLTAGE (V)

I,DRAINCURRENT(A)

V =5.0VDS

GS

D

T = -55CJ

25C

125C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward VoltageVariation with Source Currentand Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0 3 6 9 12 150.5

1

1.5

2

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCEON-RESISTANCE

V = 3.5VGS

D

R

,NORMA

LIZED

DS(ON)

10V

4.5 V

6.0V5.0V

4.0 V

0.2 0.4 0.6 0.8 1 1.20.001

0.01

0.1

1

10

V , BODY DIODE FORWARD VOLTAGE (V)

I,REVERSEDRAINCURRENT(A)

-55C

V = 0VGS

SD

S

T = 125CJ

25C

2 4 6 8 100

0.06

0.12

0.18

0.24

0.3

V , GATE TO SOURCE VOLTAGE (V)GS

R

,ON-RESISTANCE(OHM)

DS(ON)

125C

25C

I = 3 .5AD

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FDS6961A Rev.C

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics

0.0001 0.001 0.01 0.1 1 10 100 3000.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENTTHERMALRESISTANCE

r(t),NORMALIZEDEFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t1 2

R (t) = r(t) * RR =135 C/W

JAJA

JA

T - T = P * R (t)JAAJ

P(pk)

t1t2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1c.Transient thermal response will change depending on the circuit board design.

0.1 0.2 0.5 1 2 5 10 3010

20

50

100

200

500

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF)

DS

Ciss

f = 1 MHz

V = 0 VGS

Coss

Crss

0.1 0.2 0.5 1 2 5 10 30 500.01

0.05

0.1

0.5

1

2

5

10

30

V , DRAIN-SOURCE VOLTAGE (V)

I,DRAINCURRENT(A)

RDS(O

N)LIMIT

D

A

DC

DS

1s

100ms

10ms

1ms

10s

V =10V

SINGLE PULSE

R = 135C/W

T = 25CJA

GS

A

100us

0.01 0.1 0.5 10 50 100 3000

5

10

15

20

25

30

SINGLE PULSE TIME (SEC)

POWER(W)

SINGLE PULSER =135 C/W

T = 25CJA

A

0 1 2 3 40

2

4

6

8

10

Q , GATE CHARGE (nC)

V

,GATE-SOURCEV

OLTAGE(V)

g

GS

I = 3.5AD V = 5VDS

10V

15V

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SOIC(8lds) PackagingConfiguration: Figure 1.0

ComponentsLeader Tape1680mm minimum or210 empty pockets

Trailer Tape640mm minimum or80 empty pockets

SOIC(8lds) Tape Leader and TrailerConfiguration: Figure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SOIC (8lds) Packaging Information

Standard(no flow code)

L86Z F011

Packaging type

Reel Size

TNR

13" Dia

Rail/Tube

-

TNR

13" Dia

Qty per Reel/Tube/Bag 2,500 95 4,000

Box Dimension (mm) 343x64x343 530x130x83 343x64x343

Max qty per Box 5,000 30,000 8,000

D84Z

TNR

7" Dia

500

184x187x47

1,000

Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774

Weight per Reel (kg) 0.6060 - 0.9696 0.1182

F63TN Label

ESD Label

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sampleF63TNLabel

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 2500

D/C2: QTY2: CPN:N/F: F (F63TNR)3

F852NDS9959

SOIC-8 Unit Orientation

F852

NDS

9959

Pin 1

Static DissipativeEmbossed Carrier Tape

F63TNRLabel

Antistatic Cover TapeESD Label

ELECTROSTATICSENSITIVE DEVICES

DO NOT SHIPOR STORE NEAR STRONG ELECTROSTATICELECTROMAGNETIC,MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE

PT NUMBER

PEEL STRENGTHMI N_________ _____gms

MAX_____________gms

CustomizedLabel

Packaging Description:SOIC-8 parts are shipped in tape. The carrier tape ismade from a dissipative (carbon filled) polycarbonateresin. The cover tape is a multilayer film (Heat ActivatedAdhesive in nature) primarily composed of polyester film,adhesive layer, sealant, and anti-static sprayed agent.These reeled parts in standard option are shipped with2,500 units per 13" or 330cm diameter reel. The reels aredark blue in color and is made of polystyrene plastic (anti-static coated). Other option comes in 500 units per 7" or177cm diameter reel. This and some other options arefurther described in the Packaging Information table.

These full reels are individually barcode labeled andplaced inside a standard intermediate box (illustrated infigure 1.0) made of recyclable corrugated brown paper.One box contains two reels maximum. And these boxesare placed inside a barcode labeled shipping box whichcomes in different sizes depending on the number of partsshipped.

F852

NDS

9959

F852

NDS

9959

F852

NDS

9959

SO-8 Tape and Reel Data and Package Dimensions

July 1999, Rev. B

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1998 Fairchild Semiconductor Corporation

Dimensions are in millimeter

Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SOIC(8lds)(12mm)

6.50+/-0.10

5.30+/-0.10

12.0+/-0.3

1.55+/-0.05

1.60+/-0.10

1.75+/-0.10

10.25min

5.50+/-0.05

8.0+/-0.1

4.0+/-0.1

2.1+/-0.10

0.450+/-0.150

9.2+/-0.3

0.06+/-0.02

P1A0 D1

P0

F

W

E1

D0

E2B0

Tc

WcK0

T

Dimensions are in inches and millimeters

Tape SizeReel

OptionDim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

12mm 7" Dia7.00177.8

0.0591.5

512 +0.020/-0.00813 +0.5/-0.2

0.79520.2

2.16555

0.488 +0.078/-0.00012.4 +2/0

0.72418.4

0.469 0.60611.9 15.4

12mm 13" Dia13.00330

0.0591.5

512 +0.020/-0.00813 +0.5/-0.2

0.79520.2

7.00178

0.488 +0.078/-0.00012.4 +2/0

0.72418.4

0.469 0.60611.9 15.4

See detail AA

Dim A

max

13" Diameter Option

7"Diameter Option

Dim AMax

See detail AA

W3

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim Dmin

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mmmaximum

0.5mmmaximum

Sketch C (Top View)

Component lateral movement

Typicalcomponentcavitycenter line

20 deg maximum

Typicalcomponentcenter line

B0

A0

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SOIC(8lds) Embossed Carrier TapeConfiguration: Figure 3.0

SOIC(8lds) Reel Configuration: Figure 4.0

SO-8 Tape and Reel Data and Package Dimensions, continued

July 1999, Rev. B

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SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

SO-8 Tape and Reel Data and Package Dimensions, continued

September 1998, Rev. A

9

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TRADEMARKS

ACExCoolFET

CROSSVOLTE2CMOSTM

FACT

FACT Quiet Series

FAST

FASTr

GTOHiSeC

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

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Quiet Series

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