EMLAB 1 Enhancing One ‐ Dimensional FDTD. EMLAB 2 Pure Sine Wave Source.
EMLAB 1 전자회로 개요 1. 기초 이론 2.Diode 3.Transistor (MOSFET, BJT) 4.Differential...
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Transcript of EMLAB 1 전자회로 개요 1. 기초 이론 2.Diode 3.Transistor (MOSFET, BJT) 4.Differential...
EMLAB
1전자회로 개요
1. 기초 이론
2. Diode
3. Transistor (MOSFET, BJT)
4. Differential Amplifier
5. Frequency response
6. Feed back
7. Operational amplifier
8. Digital circuit (Logic, Memory, …)
9. Analog circuit
– Filters & tuned amplifier
– Oscillator
– Power amplifier
전자회로 1
전자회로 2
EMLAB
2
Two port network parameters
EMLAB
3
Two port network
Admittance parameters
1I 2I
1V
2V
22221212
12121111
S
S
IVyVyI
IVyVyI
2221212
2121111
VyVyI
VyVyI
The network contains No independent sourcesAdmittance parameter
EMLAB
4
The computation of the parameters follows directly from the definition
02
112
01
111
12
VV
V
Iy
V
Iy
02
222
01
221
12
VV
V
Iy
V
Iy
Measurement of Y-parameters
2
1
2221
1211
2
1
V
V
yy
yy
I
I
11y
212Vy
1I
+
-
1V
2I
-
2V22y
+121Vy
EMLAB
5Example Find the admittance parameters for the network
2221212
2121111
VyVyI
VyVyI
][2
3)
2
11( 1111 SyVI
2111, determine tousedCircuit yy
2I
1212 2
1
21
1VIII ][
2
121 Sy
2212 , determine tousedCircuit yy][
6
5
3
1
2
12222 SyVI
][2
1
65
53
32
312221 SyVII
Next we show one use of this model
EMLAB
6An application of the admittance parameters
2221212
2121111
VyVyI
VyVyI
212
211
6
5
2
12
1
2
3
VVI
VVI
221 4,2 IVAI
The model plus the conditions at theports are sufficient to determine theother variables.
21
21
4
1
6
5
2
10
2
1
2
32
VV
VV
22 4
1VI
][11
2
][11
86
13
2
2
21
AI
VV
VV
Determine the current through the 4 Ohm resistor
EMLAB
7Impedance parameters
2
1
2221
1211
2
1
I
I
zz
zz
V
V
11z
212Iz
1I
+
-
1V22z
121Iz
2I
+
-
2V
+-
2221212
2121111
IzIzV
IzIzV
01
221
01
111
22
II
I
Vz
I
Vz
02
222
02
112
11
II
I
Vz
I
Vz
+-
EMLAB
8
Find the Z parameters
Write the loop equations
)(42
)(42
1222
2111
IIjIjV
IIjIV
24
442
2221
1211
jzjz
jzjz
212
211
24
4)42(
IjIjV
IjIjV
Rearranging,
01
221
01
111
22
II
I
Vz
I
Vz
02
222
02
112
11
II
I
Vz
I
Vz
2221212
2121111
IzIzV
IzIzV
Example
EMLAB
9
2
1
2221
1211
2
1
V
I
hh
hh
I
V
hybrid parameter
2I
-
2V
)mho(22h
+
121Ih
11h
212Vh
1I
+
-
1V
2221212
2121111
VhIhI
VhIhV
01
221
01
111
22
VV
I
Ih
I
Vh
02
222
02
112
11
II
V
Ih
V
Vh
Q1KTC3198
ci
-ccr
+
1igm
r
1i
+
-be
EMLAB
10
221
221
DICVI
BIAVV
02
1
02
1
22
II
V
IC
V
VA
02
1
02
1
22
VV
I
ID
I
VB
-2V
+1I+
-1V
2I
DC
BA
Transmission(ABCD) parameter
2
2
1
1
I
V
DC
BA
I
V
EMLAB
11
2
2
11
11
1
1
I
V
DC
BA
I
V
3I
-2V
+1I+
-1V
2I+
-3V
3
3
22
22
2
2
I
V
DC
BA
I
V
11
11
DC
BA
22
22
DC
BA
3I1I+
-1V
+
-3V
TT
TT
DC
BA
22
22
11
11
DC
BA
DC
BA
DC
BA
TT
TT
Cascade of networks
EMLAB
12
Determine the transmission parameters
221
221
DICVI
BIAVV
02
1
02
1
22
II
V
IC
V
VA
02
1
02
1
22
VV
I
ID
I
VB
jAV
j
jV
1
11
1
12
jV
ICI
jV
2
112
1
0 when 2 I0 when 2 V
112 1
11
1
1
Ij
I
j
jI
jD 1
211 )1(1
2)
1||1(1 Ij
j
jI
jV
jB 2
Example
EMLAB
13
21
221
II
RIVV
221
221
DICVI
BIAVV
R
C
221
21
ICVjI
VV
10
1 R
1
01
Cj
CRjCj
CRjRCRj
CRjCj
RRR
Cj
R
DC
BA
1
21
1
1
10
1
10
1
1
01
10
1
2
Cascade of networks
EMLAB
14
MOSFET
EMLAB
15MOSFET 구조
• Insulator: Silicon dioxide or Polysilicon• Substrate: Single crystal silicon wafer• Gate: Electrode
EMLAB
16Channel Induced with Positive Gate-Source Voltage
tGS VV V) 3~1( tV
EMLAB
17
Gate 전압이 없을 때 pn-np diode 두 개가 붙어 있는 형태이어서 전류의 흐름이 없다 .
Gate 에 약간의 (+) 전압을 가해주면 p-type 반도체에 있던 hole 들이 멀리 밀려나고 , gate 주변은 depletion 영역으로 된다 .
MOS operation : no Drain-Source bias
(1)
(2)
EMLAB
18
전하
전기장
전압
전자 흐름
MOS operation : with Drain-Source bias
(3) (4)
에너지 band
EMLAB
19
(3)
Gate 역할
source drain
EMLAB
20
ADStGSnD VVL
Wki /1
2
1 2
Large signal equivalent
Equivalent circuit
D
A
VvDS
Do I
V
v
ir
GGS
1
Early effect
EMLAB
21Small signal equivalent
dsDSDSgsGSGS VV ,
Small signal 들의 관계만 고려한 등가 회로
D
DSDDDS R
Vi
EMLAB
22
0 gGG iIi dDD iIi
dsDSV
gsGSV or
G
S
D
gsmD gI
gsgsmg
or
G
S
D
)(,
)(2)(2
1
)(2
1
22
2
tGSnmgsmD
gsgstGStGSn
tgsGSnD
VVL
WkggI
VVVVL
Wk
VVL
Wki
0Gi Di
DS
GS or
G
S
D
2)(2
1tGSn V
L
Wk
0gi di
GSV or
G
S
D
0GI DI
2)(2
1tGSnD VV
L
WkI +
DSV
ds
Bias point + small signal equivalent
),,( DDSGS IVVDC bias point :
EMLAB
23Small signal parameter extraction
gs
ds
EMLAB
24Equivalent circuits of MOSFET
oxnntGSnm CkVVL
Wkg ),(
D
Ao I
Vr
EMLAB
25
Heater cathode grid anode
Bipolar Junction transistor
진공관 (3 극관 ) 과 동작원리 같음 .
EMLAB
26Equivalent circuits of BJT
q
kTV
V
Ig T
T
Cm ,
1,,
m
em g
rg
r
C
Aoe I
Vrrr ,)1(
EMLAB
27
1V
2V
2I1I
2221
1211
yy
yy
MOSFET equivalent circuit : Admittance parameter
1I 2I
1V
2V
gsgsmg
or
G
S
D
0
21201221 )(,0
r
VVgIrVgIVI mm
2
1
02
1 100
V
V
rgI
I
m
1I 2I
1V
2V
121Vy
212Vy
11y 22y
0,0 1211 yy
EMLAB
28
1V
2V
2I1I
DC
BA
Admittance-to-ABCD parameter transform
2
2
1
1
I
V
DC
BA
I
V
2221212
2121111
VyVyI
VyVyI
2222121
2121111
IVyVy
VyIVy
2
2
22
12
1
1
21
11
1
0
0
1
I
V
y
y
I
V
y
y
1121122211
22
21
2
2
22
12
1121211
1
11
1
0101
yyyyy
y
y
I
V
y
y
yyyI
V
1121122211
22
21
11yyyyy
y
yDC
BA
EMLAB
29
Signal source
Load resis-tance
output im-pedance
inZ outZ
input im-pedance
SR
in
out LR
2
2
1
1
I
V
DC
BA
I
V
L
in
out
RB
AV
VA
1
1
2
22 IRV L
21221 VR
BAVBIAVV
L
ini outi
Amplifier spec. from ABCD parameters
L
L
L
L
in
inin
RD
C
RB
A
VRD
C
VRB
A
I
V
iZ
2
2
1
1
S
S
out
outout CRA
DRB
I
V
iZ
2
2
2222
22
111221
221
)()(
)(/
IDRBVCRADICV
BIAVR
IRVRVDICVI
BIAVV
SSS
SS
(1) Voltage gain
(3) Input impedance
(4) Output impedance
DCRI
I
i
iA
Lin
outi
1
1
2(2) Current gain 221221 DIICRIDICVI L
S
EMLAB
30The three basic MOSFET amplifier configurations.
EMLAB
31Network parameter for basic MOS amplifiers
220
101221
11)(,0 I
gV
rgVrVgIVI
mmm
1I 2I
1V
2V
2
2
1
1
00
11
I
Vgrg
I
Vmom
Common source amplifier
gsgsmg
or
G
S
D
1I 2I
1V
2V
Common gate amplifier
gs
gsmg
or
G
S D22121
112221
)1(,
)(,0
IrVVrgII
VrVgIVII
oom
om
2
2
1
1
1011
1
I
Vrg
r
rgI
Vom
o
om
2
1
2
1
11
11
V
V
rg
r
rg
r
I
I
om
o
om
o
EMLAB
32
Common drain amplifier
1V
2Vgsmg or
GS
D
gs
1I 2I
221
21221
111
)]([,0
Ig
Vrg
V
rVVgIVI
mom
om
2
2
1
1
00
111
I
Vgrg
I
Vmom
Network parameter for basic amplifiers
EMLAB
33
Type Voltage gainInput imped-
anceOutput imped-
ance
Common source
Common gate
Common drain
)||( Lom Rrg
)||(/1
||
Lom
Lo
Rrg
Rr
Lo
om
Rr
rg
/1
1
LRB
AA
1
L
Lin
RD
C
RB
AZ
S
Sout CRA
DRBZ
om
Lo
rg
Rr
1
or
)1( omSo rgRr
mo gr
1||
Amplifier parameter for basic MOSFET amplifiers
EMLAB
34The three basic BJT amplifier configurations.
EMLAB
35
221221
12211
11,
11
)(,/
IVr
IIg
Vrg
V
rVgIVrVI
omom
om
1I 2I
1V
2V
2
2
1
1
11
11
I
V
r
grgI
V
o
mom
Common emitter amplifier
mg
or
E
B C
1I 2I
1V
2V
Common base amplifier
or
221211
1122211
)1(,
)()(
IrVVrgIrIrV
VrVgIVIIrV
oom
om
2
2
1
1
)1(0
1
1
1
1
01
I
V
rgr
r
rgI
V
r om
o
om
Network parameter for basic BJT amplifiers
r
B
ECmg
r
2
2
1
1
)1(1)1(
1
I
V
rgrr
rrr
rgrI
V
omo
o
om
em rrgr /)1(,/
EMLAB
36
Common collector amplifier
1V
2Vmg or
BE
C
1I 2I
22222
122
1
212211
21212211
)1(1
)1()1(,
)1(
1
])1[(,
)]([),(1
Ir
Vr
rVI
r
VrVI
r
VI
rIIVVIrV
rVVgIIVVVr
I
ooo
o
om
2
2
1
1
)1(
1
)1(
1)1()1(
1
I
V
r
r
r
r
I
V
o
o
r
2
2
)1(
1
)1(
1
1
I
V
r
rr
r
o
eo
e
EMLAB
37
Type Voltage gain Input impedance Output impedance
Common emitter
Common base
Common collec-tor
)||( Lom Rrg
)||(
||
Loe
Lo
Rrr
Rr
Lo
om
Rr
rg
/1
1
LRB
AA
1
L
Lin
RD
C
RB
AZ
S
Sout CRA
DRBZ
r
)1/(
)(
Loe
Loe
Rrr
Rrr
)||)(1( Lo Rrr
or
)||)(1( Somo Rrrgr
1
||
Seo
Rrr
Amplifier parameter for basic BJT amplifiers
EMLAB
38Ideal voltage amplifier
Signal source
Load
(Output impedance)
inR
outrA
1I
+
-
inoutR
inA
2I
+
-
out
inZ 0outZ
(input impedance)
0outRinR
SR
SR
• 입력 임피던스 : 무한대• 출력 임피던스 : 0
LR
Output impedanceinput impedance
LR
Feed back ratio → 0
Voltage gain
S
EMLAB
39Ideal current amplifier
Signal source
Load
(Output impedance)
inR outrG
ini
+
-
inoutR
iniG
outi
+
-
out
0inZ outZ
(input impedance)
SR
SR
• 입력 임피던스 : 0• 출력 임피던스 : 무한대
LR
Output impedanceinput impedance
LR
Feed back ratio → 0
Current gain
SI
SI
EMLAB
40Series of unilateral amplifiers (zero feed-back)
Signal source
Load
1,inR
1I
+
-
11,outR
11A
2I
+
-2
SR
SR
LR
LR
2,inR
2I
2,outR
22A
3I
+
-
3S
Sins
in
RR
R
1,
1,1 11
2,1,
2,2 ARR
R
inout
in
222,
3 ARR
R
Lout
L
Lout
L
inout
in
ins
inS RR
RA
RR
RA
RR
R
2,2
2,1,
2,1
1,
1,3