5--1

Semiconductor

Features 6A, 450V and 500V

rDS(ON) = 1.250 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedence Majority Carrier Device Related Literature

- TB334 Guidelines for Soldering Surface MountComponents to PC Boards

DescriptionThese are N-Channel enhancement mode silicon gatepower field effect transistors specifically designed for appli-cations such as switching regulators, switching converters,motor drivers, relay drivers, and drivers for high power bipo-lar switching transistors requiring high speed and low gatedrive power. These types can be operated directly from inte-grated circuits.Formerly developmental type TA17425.

Symbol

PackagingJEDEC TO-204AA JEDEC TO-220AB

Ordering InformationPART NUMBER PACKAGE BRAND

RFM6N45 TO-204AA RFM6N45

RFP6N45 TO-204AA RFP6N45

RFP6N50 TO-220AB RFP6N50

NOTE: When ordering, include the entire part number.

G

D

S

DRAIN(FLANGE)

SOURCE (PIN 2)GATE (PIN 1)

SOURCEDRAIN

GATE

DRAIN(FLANGE)

September 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.Copyright Harris Corporation 1998

File Number 1494.2

RFM6N45, RFP6N45,RFP6N50

6A, 450V and 500V, 1.250 Ohm,N-Channel Power MOSFETs

[ /Title(RFM6N45,RFP6N45,RFP6N50)/Subject(6A,450Vand500V,1.250Ohm, N-ChannelPowerMOS-FETs)/Author()/Key-words(HarrisSemi-conduc-tor, N-ChannelPowerMOS-FETs,TO-204AA,TO-220AB)/Creator()/DOCIN

5-2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise SpecifiedRFM6N45 RFP6N45 RFP6N50 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 450 450 500 VDrain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . VDGR 450 450 500 VContinuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 6 6 6 APulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15 15 15 AGate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 20 20 VMaximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 100 75 75 WLinear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 0.6 0.6 W/oCOperating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 oCMaximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TLPackage Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg

300260

300260

300260

oCoC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operationof the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise SpecifiedPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V450 - - VRFM6N45, RFP6N45

RFP6N50 500 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A (Figure 8) 2 - 4 VZero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 A

VDS = 0.8 x Rated BVDSS,VGS = 0V, TC = 125oC

- - 25 A

Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA

Drain to Source On Resistance(Note 2 ) rDS(ON) ID = 6A, VGS = 10V, (Figures 6, 7) - - 1.250 Drain to Source On-Voltage (Note 2) VDS(ON) ID = 6A, VGS = 10V - - 7.50 VTurn-On Delay Time td(ON) ID = 3A, VDD = 250V, RG = 50,

VGS = 10V, RL = 81(Figures 10, 11, 12)

- 15 45 ns

Rise Time tr - 40 80 ns

Turn-Off Delay Time td(OFF) - 190 300 nsFall Time tf - 60 100 ns

Input Capacitance CISS VGS = 0V, VDS = 25Vf = 1MHz, (Figure 9)

- - 1500 pF

Output Capacitance COSS - - 250 pF

Reverse Transfer Capacitance CRSS - - 200 pF

Thermal Resistance Junction to Case RJC RFM6N45 - - 1.25 oC/W

RFP6N45, RFP6N50 1.67 oC/W

Source to Drain Diode SpecificationsPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) VSD ISD = 3A - - 1.4 VDiode Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/s - 800 - ns

NOTES:2. Pulsed test: Pulse width 300s duty cycle 2%3. Repetitive rating: pulse width limited by maximum junction temperature.

RFM6N45, RFP6N45, RFP6N50

5-3

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASETEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vsCASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAINCURRENT

0 50 100 1500

TC, CASE TEMPERATURE (oC)

POW

ER D

ISSI

PATI

ON

MUL

TIPL

IER

0.2

0.4

0.6

0.8

1.0

1.2

25 50 75 100 125 150TC, CASE TEMPERATURE (oC)

I D, D

RA

IN C

URRE

NT (A

)

7

6

5

4

3

2

1

0

100 1000101VDS, DRAIN TO SOURCE VOLTAGE (V)

0.1

1

10

I D,

DR

AIN

CUR

RENT

(A)

OPERATION IN THIS AREAMAY BE LIMITED BY rDS(ON)

DC OPERATION

100W75W

TC = 25oC

VDSS (Max) 450V RFM6N45, RFP6N45VDSS (MAX) 500V RFP6N50

0 6 8 10 12 14

I D,D

RA

IN C

URRE

NT (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

12

42

10

8

6

4

2

0

PULSE DURATION = 80s

VGS = 5V

VGS = 4V

VGS = 6VVGS = 7 V to 10V

TC = 25oCDUTY CYCLE 2%

25oC

VDS = 20V80s PULSE TESTDUTY CYCLE 2%

I D(O

N), D

RA

IN T

O SO

URCE

CUR

RENT

(A)

10

6

2

0 2 4 6VGS, GATE TO SOURCE VOLTAGE (V)

14

0

125oC

-40oC

0 2 8 12 14ID, DRAIN CURRENT (A)

2.4

2.0

1.6

1.2

0.8

0.4

0

r DS(

ON),

DR

AIN

TO

SO

URCE

ON

RESI

STA

NCE

()

-40oC

25oC

VGS = 10VPULSE DURATION = 80sDUTY CYCLE 2%

4 6 10

125oC

RFM6N45, RFP6N45, RFP6N50

5-4

FIGURE 7. NORMALIZED DRAIN TO SOURCE ONRESISTANCE vs JUNCTION TEMPERATURE

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vsJUNCTION TEMPERATURE

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGENOTE: Refer to Harris Applications Notes AN7254 and AN7260FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

Typical Performance Curves (Continued)

1.5

2.5

0.5

-50 0 50 100 150TJ, JUNCTION TEMPERATURE (oC)

NO

RMAL

IZED

DRA

IN T

O SO

URCE

3.5

ON

RESI

STA

NCE

VGS = 10VID = 6A

1.5

1.0

0.5

-50 0 50 100 150TC, JUNCTION TEMPERATURE (oC)

VGS = VDSID = 250A

NO

RMAL

IZED

GAT

E

0

THR

ESHO

LD V

OLT

AGE

0 10 20 30 40 50

C, C

APAC

ITA

NCE

(pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1400

200

0

1000

600

CISS

COSS

CRSS

VGS = 0V, f = 1MHzCISS = CGS + CGDCRSS = CGDCOSS CDS + CGS

500

375

250

125

0

10

8

6

4

0

2

GATESOURCEVOLTAGE

IG(REF)IG(ACT)

0.75 BVDSS0.50 BVDSS0.25 BVDSS

VDD = BVDSSRL = 83

IG(REF) = 1.1mAVGS = 10V

V GS,

G

ATE

TO SO

URCE

VO

LTAG

E (V

)

20 80

DRAIN SOURCE VOLTAGE

IG(REF)IG(ACT)

V DS,

D

RA

IN T

O SO

URCE

VO

LTAG

E (V

)VDD = BVDSS

t, TIME (s)

Test Circuits and Waveforms

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

VGS

RL

RG

DUT

+

-

VDD

tON

td(ON)tr

90%

10%

VDS90%

10%

tf

td(OFF)

tOFF

90%

50%50%

10%PULSE WIDTH

VGS

0

0

RFM6N45, RFP6N45, RFP6N50