IRFB20N50K

4/2/02

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SMPS MOSFETHEXFETPower MOSFET

VDSS RDS(on) typ. ID500V 0.21Ω 20A

Parameter Max. UnitsID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 AIDM Pulsed Drain Current 80PD @TC = 25°C Power Dissipation 280 W

Linear Derating Factor 2.2 W/°CVGS Gate-to-Source Voltage ± 30 Vdv/dt Peak Diode Recovery dv/dt 6.9 V/nsTJ Operating Junction and -55 to + 150TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw 10 N

Absolute Maximum Ratings

TO-220AB

Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

Benefits

Applications

Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage

and Current Low RDS(on)

Symbol Parameter Typ. Max. UnitsEAS Single Pulse Avalanche Energy ––– 330 mJIAR Avalanche Current ––– 20 AEAR Repetitive Avalanche Energy ––– 28 mJ

Avalanche Characteristics

Symbol Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 0.45RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WRθJA Junction-to-Ambient ––– 58

Thermal Resistance

PD - 94418

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Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 ––– V/°C Reference to 25°C, ID = 1mARDS(on) Static Drain-to-Source On-Resistance ––– 0.21 0.25 Ω VGS = 10V, ID = 12AVGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA

––– ––– 50 µA VDS = 500V, VGS = 0V––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30VGate-to-Source Reverse Leakage ––– ––– -100

nAVGS = -30V

Static @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by max. junction temperature.

ISD ≤ 20A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = 20A,

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Symbol Parameter Min. Typ. Max. Units Conditionsgfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 12AQg Total Gate Charge ––– ––– 110 ID = 20AQgs Gate-to-Source Charge ––– ––– 33 nC VDS = 400VQgd Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 22 ––– VDD = 250Vtr Rise Time ––– 74 ––– ID = 20Atd(off) Turn-Off Delay Time ––– 45 ––– RG = 7.5Ωtf Fall Time ––– 33 ––– VGS = 10V,See Fig. 10Ciss Input Capacitance ––– 2870 ––– VGS = 0VCoss Output Capacitance ––– 320 ––– VDS = 25VCrss Reverse Transfer Capacitance ––– 34 ––– pF ƒ = 1.0MHz, See Fig. 5Coss Output Capacitance ––– 3480 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHzCoss Output Capacitance ––– 85 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHzCoss eff. Effective Output Capacitance ––– 160 ––– VGS = 0V, VDS = 0V to 400V

ns

Symbol Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode)––– –––

showing theISM Pulsed Source Current integral reverse

(Body Diode) ––– –––

p-n junction diode.VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 20A, VGS = 0Vtrr Reverse Recovery Time ––– 520 780 ns TJ = 25°C, IF = 20AQrr Reverse Recovery Charge ––– 5.3 8.0 µC di/dt = 100A/µston Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

S

D

G

Diode Characteristics

20

80

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Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I D, D

rain

-to-

Sou

rce

Cur

rent

(A

)

5.0V

20µs PULSE WIDTHTj = 25°C

VGSTOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5VBOTTOM 5.0V

5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

0.0

0.1

1.0

10.0

100.0

I D, D

rain

-to-

Sou

rce

Cur

rent

(Α

)

TJ = 25°C

TJ = 150°C

VDS = 50V

20µs PULSE WIDTH

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

I D, D

rain

-to-

Sou

rce

Cur

rent

(A

)

5.0V

20µs PULSE WIDTHTj = 150°C

VGSTOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5VBOTTOM 5.0V

-60 -40 -20 0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T , Junction Temperature ( C)

R

, D

rain

-to-

Sou

rce

On

Res

ista

nce

(Nor

mal

ized

)

J

DS

(on)

°

V =

I =

GS

D

10V

20A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

100000

C, C

apac

itanc

e (p

F)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = C gs + C gd , C ds SHORTED

Crss = Cgd Coss = Cds + Cgd

1 10 100 1000 10000

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

Tc = 25°CTj = 150°CSingle Pulse

1msec

10msec

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-toDrain Voltage (V)

0.1

1.0

10.0

100.0

I SD

, Rev

erse

Dra

in C

urre

nt (A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

0 20 40 60 80 100 1200

4

8

12

16

20

Q , Total Gate Charge (nC)

V

, G

ate-

to-S

ourc

e V

olta

ge (

V)

G

GS

FOR TEST CIRCUITSEE FIGURE

I =D

13

21A

V = 100VDS

V = 250VDS

V = 400VDS

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Fig 10a. Switching Time Test Circuit

VDS

90%

10%VGS

td(on) tr td(off) tf

Fig 10b. Switching Time Waveforms

≤ 1 ≤ 0.1 %

+-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

The

rmal

Res

pons

e(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

25 50 75 100 125 1500

4

8

12

16

20

I ,

Dra

in C

urre

nt (

A)

D

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QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

RG

IAS

0.01Ωtp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20VVGS

25 50 75 100 125 1500

100

200

300

400

500

600

E

, S

ingl

e P

ulse

Ava

lanc

he E

nerg

y (m

J)A

S

IDTOP

BOTTOM

9.4A

17A

20A

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P.W.Period

di/dt

Diode Recoverydv/dt

Ripple ≤ 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

Fig 14. For N-Channel HEXFETS

• • !" • #$ %%• &

'# #' • () # • *#+ • ( , # '# !

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LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

- B -

1.32 (.052)1.22 (.048)

3X0.55 (.022)0.46 (.018)

2.92 (.115)2.64 (.104)

4.69 (.185)4.20 (.165)

3X0.93 (.037)0.69 (.027)

4.06 (.160)3.55 (.140)

1.15 (.045) MIN

6.47 (.255)6.10 (.240)

3.78 (.149)3.54 (.139)

- A -

10.54 (.415)10.29 (.405)2.87 (.113)

2.62 (.103)

15.24 (.600)14.84 (.584)

14.09 (.555)13.47 (.530)

3X1.40 (.055)1.15 (.045)

2.54 (.100)

2X

0.36 (.014) M B A M

4

1 2 3

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220 Part Marking Information

TO-220 Package OutlineDimensions are shown in millimeters (inches)

EXAMPLE: THIS IS AN IRF1010

LOT CODE 1789ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C"

INTERNAT IONALRECT IFIER

LOGO

ASSEMBLYLOT CODE

PART NUMBER

DATE CODEYEAR 7 = 1997WEEK 19LINE C

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.4/02