Chapter 1 Introduction

Electromagnetic simulation is a new technology to yield high accuracy analysis and design of complicated microwave and RF printed circuit, antennas, high speed digital circuits and other electronic components. IE3D is an integrated full-wave electromagnetic simulation and optimization package for the analysis and design of 3-dimensional microstrip antennas and high frequency printed circuits and digital circuits, such as microwave and millimeter-wave integrated circuits (MMICs) and high-speed printed circuit boards (PCBs). Since its formal introduction in 1993 MTT-Symposium, the IE3D has been adopted as an industrial standard in planar and 3D electromagnetic simulation. Much improvement has been achieved in the IE3D. The IE3D has become the most versatile, easy to use, efficient and accurate electromagnetic simulation tool.

The following chapters provide a tutorial on using the IE3D package. The focus is on the layout

editor MGRID, the schematic editor MODUA, and the pattern display post-processor PATTERNVIEW. Before the IE3D 9.0, the current display and pattern calculation are performed on CURVIEW. Starting from the IE3D 9.0, most of the functionality of CURVIEW are greatly improved and completely integrated into the object oriented graphic interface, the MGRID 9.0. Even though, we still offer the CURVIEW on the IE3D 9.0, we will eventually phase out the CURVIEW in later version. We will not discuss the user of CURVIEW in the IE3D 9.0 manual.

Before we start the actual examples, we will provide a brief introduction in the theory. For those

users we do not want to know the theoretical part of the IE3D, they can skip Sections 1 to 3 of this chapter. In fact, we also suggest those people who do not have much numerical simulation experience delay reading the following two sections until they get more knowledge from the next a few chapters.

Section 1. Basic Theory and Implementation.

The primary formulation of the IE3D is an integral equation obtained through the use of Green's functions. In the IE3D, we can model both the electric current on a metallic structure and a magnetic current representing the field distribution on a metallic aperture. For simplicity reason, the following discussion will focus on the formulation of electric current only. The magnetic current formulation is similarly obtained.

Figure 1.1 An incident field is applied to a metallic structure.

For a general electromagnetic scattering problem, we assume a conducting structure in a stratified

dielectric environment, shown in Figure 1.1. An incident field is imposed to the structure, inducing the

current distribution on it. The induced current will create the secondary field to satisfy the boundary condition on the metallic structure. For a typical conducting structure, the induced current is distributed in the conducting surface and the boundary condition is,

E( r ) = Zs( r ) J( r ), r ∈ S (1)

Where S is the conducting surface; E( r ) is the total tangential field on the surface; J( r ) is the current distribution on the surface; Zs( r ) is the surface impedance of the conductor.

When the structure is in a layered dielectric environment, we can write down the total field as,

E( r ) = Ei( r ) + ∫S G( r | r' ) · J ( r' ) ds' (2)

Where G( r | r' ) is the dyadic Green's function for the dielectric environment; Ei( r ) is the incident field on the conducting surface. G( r | r' ) satisfies the stratified dielectric boundary conditions except the boundary condition on the conductor S.

Substituting (2) into (1) yields the integral equation, Zs( r ) J( r ) = Ei( r ) + ∫S G( r | r' ) · J ( r' ) ds' (3)

The incident field and the surface impedance are provided. The Green's function can be derived. The unknown is the current distribution J( r ).

By assuming that the current distribution is represented by a set of complete basis functions, J( r ) = Σn In Bn( r ), n = 1, 2, ... (4) We obtain Zs( r ) Σn In Bn( r ) = Ei( r ) + Σn In ∫S G( r | r' ) · Bn( r' ) ds' (5)

By taking the Galerkin's procedure, we convert (5) into a matrix equation, ∫S ds Ei( r ) · Bn( r ) = Sn In { ∫S ds Zs( r ) Bm( r ) · Bn( r ) -

∫S ds ∫S ds' Bm( r ) · G( r | r' ) · Bn( r' ) } (6)

The above process is to enforce (5) with a complete set of test functions and the test functions are the same as the basis function. A complete set of basis functions consist of infinite number of terms. Therefore, equation (6) is an infinite dimensional problem, and we can only get approximated solution numerically. The approximation is to truncate the infinite series with finite terms. Mathematically, the truncation is a projection process. We project the actual solution in infinite dimensions to that of finite dimensions. If we choose the finite dimensions so that the major components of the actual solution are all in the finite dimensions, we should be able to get very good approximation. After the projection, equation (6) becomes an N by N matrix equation, [Zmn] [Im] = [Vm] (7) Where Zmn = ∫S ds Zs( r ) Bm( r ) · Bn( r ) - ∫S ds ∫S ds' Bm( r ) · G( r | r' ) · Bn( r' ) (8)

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Vm = ∫S ds Ei( r ) · Bn( r ) (9)

The solution of equations (7) to (9) is the current distribution coefficients. After the current distribution is solved, we can calculate the s-parameters, radiation patterns, RLC equivalent circuit of the structure and whatever other parameters of interest.

All moment method (or method-of-moment, MOM) formulations, no matter simple or complex, take

the form of equations (7) to (9). The differences are on the choice of basis functions and the Green’s function.

There are many choices for the basis functions and the dyadic Green’s function. Consideration on

the basis functions and the dyadic Green’s function is mainly related to efficient and accurate evaluation of the double surface integrals in (8). Section 2. Uniform and Non-Uniform Meshing Basis Functions.

For general purpose electromagnetic simulators, basis functions on a meshed structure is used. The matter is whether the mesh is uniform or non-uniform.

Uniform mesh is required for those simulators using the FFT to calculate the double surface

integrals in (8). For uniform grid based simulators, the layout is divided into a uniform grid. Then, a user draws the circuit based upon the grid points in layout as shown. The process is basically fitting your circuit into a uniform grid as shown in Figure 1.2. If your circuit can’t be fitted into a uniform grid, you have two choices. One choice is to cut the portion, which can’t be fitted, and ignore it. The other choice is to make the uniform grid finer in order to get a better approximation. For method of moment, making the grid twice as fine means that you are quadrupling the number of cells. Quadrupling the number of cells means the simulation time is about 16 times slower.

Certainly, uniform meshing imposes a biggest accuracy and efficiency limitation on uniform grid

based electromagnetic simulators. Uniform grid basis functions are still adopted by some other simulators because of the requirement of the FFT algorithm used in calculating the double surface integrals in (8).

In the IE3D, we adopt a triangular and rectangular mixed meshing scheme and apply the non-

uniform grid basis function on it. A non-uniform grid based simulator approaches a problem in a better way. A user draws a circuit on a layout editor first. Then, the simulator tries to fit a non-uniform triangular and rectangular mesh into the circuit. The procedure is that the simulator tries to create a non-uniform mesh to fit the circuit instead of trying to fit the circuit into a pre-defined uniform mesh. Shown in Figure 1.3 are two typical meshing schemes used in a numerical modeling. As you can see from the comparison between Figure 1.2 and Figure 1.3, the non-uniform grid meshing schemes are more flexible, efficient and accurate than the uniform meshing scheme. It creates much less cells than the uniform meshing.

Some people claimed that uniform grid based simulators are more accurate than non-uniform grid based simulators. This is actually a mis-leading concept.

First of all, non-uniform grid based simulators can approximate your actual structure more accurate

than uniform grid based simulators, because we do not need to ignore the irregular portion of the circuit. Even when a circuit can be fitted into a uniform grid, a uniform grid based simulator usually still

creates more cells and therefore more unknowns in the calculation. Mathematically, more unknowns normally may mean higher accuracy. However, such a rule may not apply in the case of uniform grid vs. non-uniform grid. Uniform grid yields more unknowns. However, it does not use all those unknowns in the critical region. It uses more cells everywhere. It does not concentrate on the region requiring more unknowns. On a non-uniform grid based simulator, we can create small cells on the region requiring more

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unknowns and use large cells in the region requiring less unknowns.

Figure 1.2 Uniform meshing creates large number of cells. (a) A microstrip bend

structure is drawn in a uniform grid layout. (b) The bend is changed in the data base in order to fit into a uniform grid. The cells inside the fitted structure are the cells used in the actual calculation. There are totally 83 cells created.

Figure 1.3 Non-uniform meshing is flexible, efficient and also accurate. (a) A coarse

non-uniform meshing of the structure in Figure 1.2 (a). No approximation is made in the shape of the structure. Total 8 cells are created. (b) Small edge cells are created on the edge in order to enhance accuracy. Total 29 cells are created. The small cells along edges of the structure are used to model the edge singularity of the current distribution.

Many people may have known that there is some edge singularity in the current density flowing on a

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microstrip line as shown in Figure 1.4. We try to use the roof-top functions to approximate the current distribution on the microstrip. A roof-top function is a ramp in the longitudinal direction and constant on the transverse direction. In a typical IE3D simulation, we use 1 to 5 cells in the transverse direction. People may wonder how could we get accurate results using just 1 to 5 cells since Figure 1.4 shows that we can not get high accuracy current density on the transverse direction even using many cells in the transverse direction. That is true for current density. In fact, no matter how many cells we use on the transverse direction, we still can’t get good accuracy for current density at the edges of the microstrip. However, we are able to extract the circuit or antenna parameters accurately even using few cells in the transverse direction. Why is it like that?

For a circuit designer, the most interesting parameters are the s-parameters (or y-, z-parameters).

These parameters are directly related to the total current across the transverse direction at a port. So, the parameter a circuit designer really cares about is the total current which is the integral of current density. For an antenna designer, another parameter of interest is the radiation pattern which is also a weighted integral of current density. As you can see, the parameters of interest to designers are the integral of current density instead of current density itself.

Figure 1.4

Surprisingly, MOM codes using roof-top functions are very accurate in predicting the total current

on the transverse direction even using 1 to 5 cells in the transverse direction. For fast simulation, the IE3D uses 1 cell in the transverse direction (see Figure 1.4b) and still gets reasonable accuracy. To get high accuracy, we use two small cells along the edge of the strip (see Figure 1.4c). For a uniform mesh in Figure 1.4d, the cells in the center area really do not play much role in improving the accuracy. A simulation based upon the uniform meshing in Figure 1.4d may not be as accurate as the one based upon the non-uniform meshing in Figure 1.4c because the small cells on the edges in Figure 1.4c better approximate the fast changing current density along the edge. A comparison between uniform and non-uniform meshing on practical examples will be discussed in Appendix M. Section 3. Open Boundary, Close Boundary and Periodic Boundary.

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Traditionally, MOM electromagnetic simulators are, according to their solution domains, divided into two groups: (1) Open boundary Green’s function formulations; (2) Close boundary Green’s function formulations.

Open boundary Green’s function formulations are for the modeling of antenna structures and large

layout structures without metallic enclosures. It is the exact boundary conditions for most antennas and many different RF and microwave circuits. Close boundary Green’s function formulations are for microwave circuits inside enclosures. Typical examples are microwave filters. For most of the enclosed microwave circuits, the enclosures do not change the circuit properties much. Open boundary Green’s function formulations normally can still be applied to yield high accuracy results. However, there are cases the metallic enclosures are critical to the performance of the microwave circuits. Typical examples are microwave filters with thick substrates. Normally, the thick substrate makes the power less concentrated on the traces. It is easier to radiate out of the circuit. For a circuit not at resonance, the radiation is normally small. However, when a circuit is at resonance, much of the power can be radiated. In fact, antenna is an example of power radiation at resonance. Antenna designers make use of resonance to get the power radiated out.

Another important high frequency application making use of resonance is filter. Most filters involve

multiple coupled resonances in order to get good performance for the pass-band and stop-band. Circuit designers make use of resonance to let power pass through a circuit with little loss at specific frequency range. They do not want the power to radiate out at the resonances. For such a case, a metallic enclosure can keep the power from radiating out. For a typical microstrip filter, the radiation is low even at resonance when the substrate is thin. However, when the substrate is too thick, the radiated power can be much higher than the transmitted power in the filter. Designers normally puts a metallic enclosure to prevent the radiation. If we apply an open boundary Green’s function based simulator to such a case, we may not be able to predict the performance of the thick-substrate filter very well because the open boundary Green’s function formulation will predict strong radiation, whereas the reality is that the enclosure prevents such a radiation.

Traditionally, open boundary Green’s function formulation is implemented with non-uniform

meshing, and close boundary Green’s formulation is implemented with uniform meshing. For this reason, microwave designers did not have good tools for flexible geometry modeling for structures inside an enclosure, even though flexible geometry modeling for open structures is available on the IE3D 7.0 and earlier versions.

The exciting thing is that close boundary Green’s function formulation and non-uniform meshing

are implemented into the IE3D 8.0. IE3D 8.0 users are offered with the maximum flexibility and capability with the non-uniform meshing for either open boundary, close boundary and periodic boundary condition. Periodic boundary condition is used to model large phase arrays. A unit-cell of periodic boundary condition allows users to investigate the effects of coupling in a large phase array. Section 4. IE3D Application Programs and Capability

The IE3D package consists of the five major application programs:

MGRID -------- Layout editor for the construction of a geometry, and post processor for current display and pattern calculation.

IE3D ----------- Electromagnetic simulator or simulation engine for numerical analysis. MODUA ------ Schematic editor for parameter display and nodal circuit simulation. PATTERNVIEW ------------- Post processor for radiation patterns. IE3DLIBRARY -------------- The object-oriented 2nd IE3D interface for easy construction of pre-defined structures. CURVIEW --- Post processor for display of current distribution and field distribution. It is being

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replaced by the MGRID 9.0’s post processing capability. MTRAN ------ Optional DXF converter.

To perform an electromagnetic simulation, a user starts from the layout editor MGRID. On MGRID,

a user draws a circuit as a group of polygons. After he finishes constructing the polygons and defining the ports, he can invoke the simulation engine IE3D to perform an electromagnetic simulation. The simulation result is saved into a file in the HP/EEsof compatible format. The simulation result can be imported into other popular commercial nodal network or circuit simulators such as the Touchstone® from HP/EEsof. The simulation result can also be displayed and processed by the schematic editor MODUA of the IE3D package. MODUA is a program similar to the Touchstone® except it does not have the big element library. MODUA does not need such a library because any simulation result files and pre-simulated geometry files from MGRID can be used as modules in MODUA. A user can also define lumped elements such as resistor, capacitor, inductor, mutual inductor, open circuit, short circuit and ideal connection.

One of the major advantages of electromagnetic simulation is that the field and current distributions

from a simulated structure are accessible to the users. Information on the current and field distribution in a structure can be valuable to circuit and antenna designers. On the IE3D, a user can optionally create the data file for the current distribution. Then, he can run the MGRID/CURVIEW program to display the current distribution, radiation pattern and near field. The PATTERNVIEW expands the radiation pattern post-processing capability. It allows comparison of radiation patterns from different frequencies of the same structure or different structures.

Some users may have a geometry constructed using other tools. The MGRID combining with the

optional DXF converter MTRAN allows a user to import geometry in AutoCAD DXF format. For geometry in CIF or GDSII format, a shareware was implemented into the MGRID to do the conversion. Complete bi-directional DXF, GDSII, GERBER and CIF conversion requires the optional LinkCAD converter. For more information on the MTRAN and LinkCAD, please contact Zeland Software, Inc. for more information.

The IE3D has a great advantage over other commercial electromagnetic simulation tools no matter

whether accuracy, efficiency, capability or usability is concerned. Table 1.1 shows the major capabilities of the IE3D. For any user who has access or knowledge on other electromagnetic simulators, he can do a comparison based upon Table 1.1. He will find the IE3D provides far more features and capabilities than other simulators.

Table 1.1 also serves as a quick reference to a user. If a user is not sure whether a feature is available

on the IE3D, he can, at any time, check Table 1.1 to see whether the feature is in the list. If it is in the list, he can use the key words to find out the feature from the index. Otherwise, he can still call technical support in Zeland Software, Inc. Section 5. Configuration of the User’s Manual

In this manual, we will discuss the window configuration for MGRID, MODUA and PATTERNVIEW in Chapter. The functionality of each item is briefly explained. The page number for which a menu item is used is also documented. Whenever you have difficulty to understand the functionality of a menu item, you can refer to Chapter 2 and find where the menu item is used. Chapter explains the basic input techniques by illustrating the construction of a simple microstrip bend. Chapter 4 discusses how we can ensure electrical connection between polygons in the layout editor MGRID, which uses double precision floating point numbers for best accuracy in describing the vertices of the polygons. We also discuss how we can construct 3D structures easily on the MGRID. In Chapter 5, we will discuss current distribution, pattern calculation, and full-wave electromagnetic optimization. In Chapter 6, we will discuss the procedures and the key points in importing geometry from CIF format. We also explain how to accurately model closely coupled structures such as MIM capacitors. We also demonstrate how to extract

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lumped element equivalent circuit and enhance the accuracy of the equivalence. Chapter 7 discusses mixed electromagnetic and circuit simulation and optimization including distributed and lumped elements. Chapter 8 focuses on the modeling and simulation of aperture structures using magnetic current modeling. Chapter 9 discusses the applications of the IE3D in signal integrity. We will discuss how to extract lumped element RLC models in SPICE format, and how to find the time transient responses of the circuits. Chapter 10 discusses the modeling of filter structures. Chapter 11 discusses modeling of wire antennas and other RF antennas. The last chapter, Chapter 12 focuses on accuracy and efficiency enhancement. Chapter 13 will discuss modeling of antenna arrays. The important feature “Simulate and Find Excitation” will be discussed there. Chapter 14 will discuss the modeling of open and boxed structures. Chapter 15 will focus on differential structures. Appendices discuss some important issues which are not discussed in the formal context of the manual. Table 1.1 Major capabilities of the IE3D Electromagnetic Simulator

FUNCTIONALITY AND

CAPABILITY GENERAL

SPECIAL CAPABILITY OR EXPLANATION

Microstrip Circuits Yes Multiple dielectrics, lossy and finite ground plane

Stripline Circuits Yes Accurate modeling of finite strip thicknessCo-planar Waveguide (CPW) Yes Finite thickness, lossy ground, finite or

infinite ground plane Slot-line Structures Yes Magnetic current modeling for infinite

ground plane and electric current modeling for finite ground plane.

Suspended Stripline and Other Multi-layer Planar Circuits

Yes No limit on the number of dielectric and metallic layers

High Speed Digital Packaging and Signal Integrity

Yes RLCG equivalent circuit extraction in SPICE format, simulation of SPICE file in frequency domain for verification and confirmation

Printed Circuits on Lossy Silicon Substrate Yes IE3D’s Green’s functions include all the loses in the dielectrics and metals.

HTS Superconductor Circuits Yes Modeling of skin effect and high dielectric permittivity

Coaxial Circuits and Shielded Strip-line Circuits

Yes modeling of any multiple conductor transmission line systems of arbitrary cross-section shape

Microstrip Antennas Yes Edge fed, probe-fed, proximity coupled fed and aperture coupled fed, no limitation on number of feeds and vertical pins.

Wire Antennas Yes Dipoles, loop antennas, cylindrical helix and conical helix antennas, quadrifilar antennas. It provides more accurate modeling than the typical wire antenna algorithms.

RF Antennas Yes Inverted antennas, spiral antennas and any other antennas with planar and 3D metallic structures

Plane-wave Incident and RCS Problems Yes Calculate monostatic and bistatic radar cross-section (RCS)

3D Capability Yes Vertical and conical via holes, airbridges,

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3D interconnect, no limitation on the shape and configuration of a 3D structure

Arbitrarily Shaped Structures Yes No limitation on the shape and orientation of planar and 3D structures, meshing structure efficiently without limited by uniform grids

Open Structures Yes Capture all the radiation and coupling effects

Closed Structures Yes Electric and magnetic walls emulating enclosures. Exact boxed Green’s functions are implemented in the IE3D 8.0 for precise modeling of enclosed structures.

Periodic Structures Yes Periodical walls to emulating periodical structures such as infinite array. Exact periodic Green’s functions are implemented into the IE3D 8.0 for precise modeling of periodic structures.

Number of Ports and Port Location No limit Offer different de-embedding schemes for different situation: extension schemes for high accuracy, localized for highly packed circuits, differential feed for structure without an infinite ground plane. no limitation on port location and orientation.

Lumped Elements and Layout Level Simulation

Yes Lumped elements defined in both the layout and schematic editors, s-parameter files incorporated for mixed EM and nodal simulation

Electromagnetic Optimization Yes Automatic adjusting the location of polygon vertices to fine tune structures

Mixed Electromagnetic and Network Optimization

Yes The MGRID+MODUA+IE3D allows mixed electromagnetic and network simulation and optimization.

Back Simulation Yes Users are allowed to extract the effect of a geometry portion out of a simulation to yield the simulation result of the major part of interest

Number of Conductor Layers No limit A user can define as many conductor layers as he likes

Different Conductor Property in a Circuit Yes

A user can define the conductor as normal conductor, HTS superconductor, or thin film resistor

Metallic Thickness Modeling Yes The actual geometry of a thick metallic structure can be modeled, taking into consideration of the skin effect

Number of Dielectric Layers No limit General formulation and implementation of Green’s functions for unlimited number of dielectric layers

Complex Dielectric Constant (εr ), Permeability (μr) and Conductivity (σ )

Yes Complex εr, μr and σ available for both the dielectric layers and the metallic strips.

Thin Dielectric Layers Yes Tested for thin dielectric layers down to 0.1 microns in MMICs.

High Dielectric Constant Material Yes Tested for dielectric constant up to 1000 in

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HTS circuits MIM Capacitors Yes Optionally meshing the coupling plates

into small cells for accurate modeling; aligning the meshing on both plates; automatic creation of meshed MIM capacitor with or without vias.

Spiral Inductors Yes Easy one-step construction of rectangular and circular spiral inductor, modeling of finite thick metal traces, modeling of air-bridges, modeling of lossy ground plane

Interactive Graphic Input of Geometry Yes Flexible mouse input and keyboard input of polygon vertices, strong 2D and 3D geometry checking

Convenient Geometry Editing Yes Copy, move, polygon and vertex elevation, automatic cutting of overlapped polygons, digging holes in geometry, polygon connectivity checking, etc.

3D Structure Display in Geometry Editing Yes 3D display is a great help to 3D geometry editing

Automatic Generation of Geometry Yes One step iconized constructions of vias, wire-bonds, circles, rings, curve-structures, spheres, fans, conical and cylindrical helix antennas, cylindrical tubes, probe-feed proximity, slots, etc.

Parameter Display Yes Data list, linear graph and Smith Chart display of S, Y, Z-parameters and VSWR

Comparison of Results Yes Display multiple simulation and measurement results simultaneously

Curve-fitting and Interpolation Yes Curve-fitting simulation data to yield smooth result

Nodal Circuit Simulation Yes Connect two or more s-parameter modules or lumped elements together using idealized connection

Calculation of Port Information with Loading

Yes The MODUA allows a user to calculate the voltage, current and waves at all the ports under different excitation and load conditions.

Equivalent Circuit Extraction Yes Calculate RLCG equivalent circuit for transmission line model, find the parameter values for equivalent circuit created by users

Frequency Dependent Equivalent Circuit Extraction

Yes The MODUA allows extraction of frequency dependent equivalent circuit extraction.

3D Current Distribution Display Yes Display 2D vector current, 3D current density animation, 3D average current density display

3D radiation pattern display yes 3D pattern, 3D mapped pattern, 2D pattern and 2D polar pattern for both linear and circular polarized antennas, axial ratio display, display of radiation parameters such as directivity, radiated power

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Radiation Parameter Frequency Response Display

Yes The PATTERNVIEW allows display of frequency response display of radiation parameters

Radiation Pattern Phase Display Yes The PATTERNVIEW allows displaying the phase of a pattern.

Radiation Pattern Comparison Yes The PATTERNVIEW allows comparison of radiation patterns at different frequencies and from different structures.

Radiation Patterns of Loaded Antennas Yes The IE3D allows users to calculate the radiation patterns of antennas with lumped elements.

Pattern Optimization Yes The IE3D 7.0 allows optimization of radiation patterns and parameters.

Pattern Rotation Yes You can rotate the patterns from CURVIEW or PATTERNVIEW. This feature is very important for wireless applications because rotation of antennas are frequently encountered.

Real Ground Effect on Pattern Yes The CURVIEW and PATTERVIEW allow the users to add the effects of the real ground to the pattern.

Pattern Merging Yes The PATTERNVIEW allows merging of radiation patterns from individual radiators. This feature allows calculation of radiation pattern from a very large structures divided into smaller sub-structures for field simulation.

3D Near Field Display Yes Display Ex, Ey and Ez or any combination of the components

Save High Quality Bitmap File Yes Save colorful current distribution, radiation pattern or near field pictures in bitmap files.

Display Current and Field with Different Excitation and Load Conditions

Yes Easy investigation of circular polarization, antenna with integrated source.

S-parameter HP/EEsof ® Compatible Yes RLCG Equivalent Circuit SPICE Compatible Yes GDSII, DXF, GERBER and CIF Bi-direction Conversion

Yes* CIF and GDSII built-in, DXF, GERBER optional

Time-Domain Simulation Yes* Use together with the MDSPICE simulator from Zeland Software, Inc.

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