AM01475V1 N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 · 1 Electrical ratings Table 1. Absolute...
Transcript of AM01475V1 N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 · 1 Electrical ratings Table 1. Absolute...
13
TAB
2
DPAK
D(2, TAB)
G(1)
S(3)AM01475V1
FeaturesOrder codes VDS RDS(on) max. ID PTOT
STD6N52K3 525 V 1.2 Ω 5 A 70 W
• 100% avalanche tested• Extremely high dv/dt capability• Very low intrinsic capacitance• Improved diode reverse recovery characteristics• Zener-protected
Applications• Switching applications
DescriptionThis MDmesh™ K3 Power MOSFET is the result of improvements applied toSTMicroelectronics’ MDmesh™ technology, combined with a new optimized verticalstructure. This device boasts an extremely low on-resistance, superior dynamicperformance and high avalanche capability, rendering it suitable for the mostdemanding applications.
Product status link
STD6N52K3
Product summary
Order code STD6N52K3
Marking 6N52K3
Package DPAK
Packing Tape and reel
N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 Power MOSFET in DPAK package
STD6N52K3
Datasheet
DS5919 - Rev 3 - September 2018For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage ±30 V
ID Drain current (continuous) at TC = 25 °C 5 A
ID Drain current (continuous) at TC = 100 °C 3 A
IDM (1) Drain current (pulsed) 20 A
PTOT Total dissipation at TC = 25 °C 70 W
IAR Avalanche current, repetitive or not-repetitive 2.5 A
EAS (2) Single pulse avalanche energy 110 mJ
dv/dt (3) Peak diode recovery voltage slope 12 V/ns
Tstg Storage temperature range-55 to 150 °C
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 1.79 °C/W
Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
STD6N52K3Electrical ratings
DS5919 - Rev 3 page 2/18
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdownvoltage ID = 1 mA, VGS = 0 V 525 V
IDSSZero gate voltage draincurrent
VGS = 0 V, VDS = 525 V 1 µA
VGS = 0 V, VDS = 525 VTC = 125 °C (1) 50 µA
IGSS Gate body leakage current VGS = ±20 V, VDS = 0 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
RDS(on)Static drain-source onresistance VGS = 10 V, ID = 2.5 A 1 1.2 Ω
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitanceVDS = 50 V, f = 1 MHz,VGS = 0 V -
670
- pFCoss Output capacitance 54
Crss Reverse transfer capacitance 10
Coss eq. (1) Equivalent output capacitanceVGS = 0 V,VDS = 0 to 420 V 40 pF
RG Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω
Qg Total gate charge VDD = 420 V, ID = 5 A,
VGS = 0 to 10 V(see Figure 15. Test circuit forgate charge behavior)
-
26
- nCQgs Gate-source charge 4
Qgd Gate-drain charge 15
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0to 80% VDSS.
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 260 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14. Test circuit forresistive load switching timesand Figure 19. Switching timewaveform)
-
10
- nstr Rise time 11
td(off) Turn-off delay time 31
tf Fall time 18
STD6N52K3Electrical characteristics
DS5919 - Rev 3 page 3/18
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current-
5A
ISDM (1) Source-drain current (pulsed) 20
VSD (2) Forward on voltage ISD = 5 A, VGS = 0 V - 1.5 V
trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure16. Test circuit for inductiveload switching and dioderecovery times)
-
206 ns
Qrr Reverse recovery charge 1.4 μC
IRRM Reverse recovery current 14 A
trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16. Test circuit forinductive load switching anddiode recovery times)
-
233 ns
Qrr Reverse recovery charge 1.7 μC
IRRM Reverse recovery current 15 A
1. Pulse width limited by safe operating area.2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Table 7. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSOGate-source breakdownvoltage ID = 0 A, IGS = ±1 mA ±30 - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need foradditional external componentry.
STD6N52K3Electrical characteristics
DS5919 - Rev 3 page 4/18
2.1 Electrical characteristics curves
Figure 1. Safe operating area
ID
10
1
0.1
0.01 0.1 1 100 VDS(V) 10
(A)
Opera tion in
this
a rea is
Limite
d by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C Tc=25°CSingle pulse
AM08855v1
Figure 2. Thermal impedance
GC20460
100
10-1
10-2
10-5 10-4 10-3 10-2 10-1
K
tp (s)
Figure 3. Output characteristics
ID
6
4
2
0 0 10 VDS(V) 20
(A)
5 15 25
8
10
5V
6V
7V
VGS=10V
AM08856v1
Figure 4. Transfer characteristics
ID
3
2
1
0 0 4 VGS(V)8
(A)
2 6
4
5
6
7 VDS=15V
AM08857v1
Figure 5. Gate charge vs gate-source voltage
VGS
6
4
2
0 0 Qg
8
10
10
VDD=420V ID=5A
30
12
3
DS 350
250
150
50
AM08858v1 VDS
Figure 6. Static drain-source on resistance
RDS(on)
1.1
1.0
0.9
0.80 2 ID(A)
(Ω)
1 3
1.2
1.3
1.4
4
AM08859v1
VGS =10V
STD6N52K3Electrical characteristics curves
DS5919 - Rev 3 page 5/18
Figure 7. Capacitance variations
C
1000
100
10
1 0.1 10 VDS(V)
(pF)
1 100
Ciss
Coss
Crss
AM08860v1
Figure 8. Output capacitance stored energy
Eoss
1.5
1.0
0.5 0 0 100 VDS(V)
(µJ)
400
2.0
200 300
2.5
3.0
500 600
3.5
4.0
AM08861v1
Figure 9. Normalized gate threshold voltage vstemperature
VGS(th)
1.00
0.90
0.80
0.70 -75 TJ(°C)
(norm)
-25
1.10
75 25 125
AM08862v1
ID =50µA
Figure 10. Normalized on resistance vs temperature
RDS(on)
2.0
1.5
1.0
0.5
-75 TJ(°C)
(norm)
-25 75 25 125
2.5
0
AM08863v1
VGS=10V
Figure 11. Source-drain diode forward characteristics
VSD
0 2 ISD(A)
(V)
1 53 4 0.3
0.4
0.5
0.6
0.7
0.8
0.9TJ=-50°C
TJ=150°C
TJ=25°C
6 7 8
AM08865v1
Figure 12. Normalized V(BR)DSS vs temperature
V(BR)DSS
-75 TJ(°C)
(norm)
-25 75 25 125 0.90
0.95
1.00
1.05
1.10
AM08864v1
STD6N52K3Electrical characteristics curves
DS5919 - Rev 3 page 6/18
Figure 13. Maximum avalanche energy vs temperature
EAS
0 40 TJ(°C)
(mJ)
20 100 60 80 0
10 2030 40
120 140
50 60 7080 90
100 110
ID=2.5A VDD=50 V
AM08866v1
STD6N52K3Electrical characteristics curves
DS5919 - Rev 3 page 7/18
3 Test circuits
Figure 14. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 15. Test circuit for gate charge behavior
AM01469v1
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST100 Ω
100 nF
D.U.T.
+pulse width
VGS
2200μF
VG
VDD
Figure 16. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 17. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 18. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 19. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STD6N52K3Test circuits
DS5919 - Rev 3 page 8/18
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
STD6N52K3Package information
DS5919 - Rev 3 page 9/18
4.1 DPAK (TO-252) type A package information
Figure 20. DPAK (TO-252) type A package outline
0068772_A_25
STD6N52K3DPAK (TO-252) type A package information
DS5919 - Rev 3 page 10/18
Table 8. DPAK (TO-252) type A mechanical data
Dim.mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
STD6N52K3DPAK (TO-252) type A package information
DS5919 - Rev 3 page 11/18
4.2 DPAK (TO-252) type E package information
Figure 21. DPAK (TO-252) type E package outline
0068772_type-E_rev.25
STD6N52K3DPAK (TO-252) type E package information
DS5919 - Rev 3 page 12/18
Table 9. DPAK (TO-252) type E mechanical data
Dim.mm
Min. Typ. Max.
A 2.18 2.39
A2 0.13
b 0.65 0.884
b4 4.95 5.46
c 0.46 0.61
c2 0.46 0.60
D 5.97 6.22
D1 5.21
E 6.35 6.73
E1 4.32
e 2.286
e1 4.572
H 9.94 10.34
L 1.50 1.78
L1 2.74
L2 0.89 1.27
L4 1.02
Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
STD6N52K3DPAK (TO-252) type E package information
DS5919 - Rev 3 page 13/18
4.3 DPAK (TO-252) packing information
Figure 23. DPAK (TO-252) tape outline
P1A0 D1
P0
FW
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. onlyincluding draft andradii concentric around B0
AM08852v1
Top covertape
STD6N52K3DPAK (TO-252) packing information
DS5919 - Rev 3 page 14/18
Figure 24. DPAK (TO-252) reel outline
A
D
B
Full radius
Tape slot in core for tape start
2.5mm min.width
G measured at hub
C
N
40mm min. access hole at slot location
T
AM06038v1
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
STD6N52K3DPAK (TO-252) packing information
DS5919 - Rev 3 page 15/18
Revision history
Table 11. Document revision history
Date Revision Changes
03-Sep-2008 1 Initial release.
21-Feb-2011 2
– Added new package, mechanical data: D²PAK;
– Added new package, mechanical data: TO-220;
– Document status promoted from preliminary data to datasheet.
05-Sep-2018 3
The part numbers STB6N52K3, STF6N52K3 and STP6N52K3 have been moved to aseparate datasheet.
Removed maturity status indication from cover page. The document status is production data.
Updated title and features in cover page.
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section4 Package information.
Minor text changes.
STD6N52K3
DS5919 - Rev 3 page 16/18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
STD6N52K3Contents
DS5919 - Rev 3 page 17/18
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
STD6N52K3
DS5919 - Rev 3 page 18/18