2010 Kiev ARW NATO Bondarenko
Transcript of 2010 Kiev ARW NATO Bondarenko
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This is invited talk presentedby Vitaly Bondarenko at
1st Ukrainian-French SeminarSemiconductor-on-Insulator Materials,
Devices and Circuits: Physics,Technology and Diagnostics and6th International SemOI Workshop
Nanoscaled Semiconductor-on-Insulator
Materials, Sensors and Devices25-28 September, 2010
Cultural Center Jerelo, Kyiv, Ukraine
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ZnO films and nanocrystalson bulk silicon and SOI wafers:Formation, Properties and Applications
V. Bondarenko, E. Chubenko
Belarusian State Universityof Informatics andRadioelectronics,
Minsk, Belarus
A. Belous, V. Malyshev
Technical CentreBelmicrosystems,
Integral Corporation,Minsk, Belarus
M. Balucani
Rome University La Sapienza,Rome, Italy
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Content
Introduction
- What is ZnO- Industrial ZnO Applications- ZnO in Electronics: Technologies- ZnO in Electronics: Applications- ZnO vs Si and others: Properties- ZnO vs Si: Applications and Technological Issues
Integration of ZnO with Si substrates- Motivation- Technological requirements- Possible solutions for ZnO & Si integration
Low temperature ZnO deposition- Electrochemical
- Hydrothermal
Applications Conclusions
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What is Zinc Oxide ?
Zinc oxide is an inorganic compoundwith the formula ZnO.
It usually appears as a white powder,nearly insoluble in water.
It is one of the so-called II-VI semiconductors, andhas wide direct band gap
In nature ZnO occurs as the mineralZincite
http://en.wikipedia.org/wiki/Zinc oxide
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Industrial ZnO Applications
Total world production of ZnO:105 tones
< 0,1 %
Total world production of silicon:6106 tones
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ZnO in Electronics: Technology
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ZnO in Electronics: Applications
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Parameter (300 K) Si GaAs ZnO GaN -SiC
Eg, eV1,12
indirect
1,42
direct
3,35
direct
3,45
direct
3,05
direct
Luminescenceefficiency, %
10-4 60-70 70 70-80 -
Electron / Hole Hallmobility, cm2/(Vs)
1600 /430
8500 /400
300 / 10 500 / 150 900 / 40
Crystal lattice cubic cubic hex hex hex
Lattice constants0 and 0,
5,43 5,653 3,245,21
3,195,19
3,0715,11
Thermal expansioncoefficient, umm1K1
2,6 5,76,51
3,02
3,17
5,59
4,3
4,7
Thermal conductivity,W/(cmK) 1,49 0,55 0,60 2 4,9
ZnO vs Si and others
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ZnO vs Si: Applications and Technological Issues
Integrated circuitry- MOS- CMOS- BipolarHighSpeedHighDensityHighReliabilityNoLEDs
NoPiezo
OptoelectronicsPiezoeffect based devicesSAW DevicesNo Integrated circuitry
Silicon Zinc Oxide
ZnO (25 mm) $ 3500
Si (100 mm) $ 15Si SOI (150 mm) $ 300
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Integration of ZnO with Si substrates: Motivation
ZnO devices and Si devices integrated on a single die We can use the Si fab to fabricate ZnO devices Lower cost of the ZnO devices
ZnO
ZnO
Si
Processing
Si
SiDicing
SOI bulk Si
Direct integration
Hybrid Integration
Discrete Devices
Packaging
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and as a result
Major Problem
Genesis of Defects in Heterostructures
CRACK!
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Integration: Marriage of ZnO with Si
What we do know: Marriage is result of love(not always but ....)
Does Si love ZnO ? No !(Si wafer is thick, ZnO layer is thin)
Does ZnO love Si ? - Yes !(ZnO layer is thin, Si wafer is thick. It is very
convinient to live on the thick substrate)
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Integration: Marriage of ZnO with Si
What to do ?Lets introduce buffer layer between partners !!!
What about childrens ??? (We will see !!!)
Porous silicon (PS) as a buffer layer
reducing mismatch stress
increasing adhesion
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How to do it, if we know what to do ?
E.B. Chubenko, V.P. Bondarenko, M. Balucani, Tech. Phys. Lett. 35 (2009) 1160.
PS with metal sublayerPS
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Local Low T Deposition:- electrochemical- hydrothermal
Thermal Budget Issue: When to deposit ZnO ?
~ 700technological steps
Hence:T
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Electrochemical deposition of ZnO on Si
ZnO can be electrochemically deposited from aqueoussolution at low temperature (T = 80C)
BUT:Porous silicon buffer layer due to its huge effective surface is easily
etched in hot water (T > 50C) solution with pH > 6
How to solve the problem of PS etching: protect porous silicon with thin metal layer deposit ZnO from non aqueous solution
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Realization: Equipment
100 mm Si waferwith
ZnO layer
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Realization: Solutions & Regimes
Solutions for ZnO depositionAqueous:
Base Pure water
Components 0.05 0.1 M of Zn(NO3)2
Deposition velocity 1 1.5 microns/min
Current density 2 10 mA/cm2
Temperature 60 85C
Non aqueous:
Base DMSO
Components 0.03 M of ZnCl
0.1 M of KCl (for good conductivity)
Deposition velocity 0.1 0.2 microns/min
Current density 0.3 0.5 mA/cm2
Temperature 95 100C
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Realization: Local Deposition of ZnO
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Electrochemical deposition of ZnOfrom aqueous solution
E.B. Chubenko, V.P. Bondarenko, M. Balucani, Tech. Phys. Lett. 35 (2009) 1160., J. Cembrero, D. Busquets-Mataix, Thin Solid Films 517 (2009) 2859.
current density
Depending on process parameters:current density, temperature, time, concentration,different ZnO morphology types can be obtained
continuousporousprismaticneedle-like
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ZnO deposition on metal buffer layer (aqueous)
Deposition potential
Current density
Voltammograms
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ZnO deposition on metal buffer layer
j = 2,5 /2
j = 5 /2
j = 7,5 /2
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Z O d iti PS b ff l f page 21/37
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ZnO deposition on PS buffer layer fromnon-aqueous solution)
Cross section Top viewTime
min
0
25
45
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ZnO photoluminescence
Electrochemically deposited ZnO showsyellow band photoluminescence
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Hydrothermal ZnO deposition on Si
HMTA hexamethylenetetramine
Film of prisms Prismatic columns Rosettes
Depending of temperature and solutioncomposition various structures can beobtained
75 C 85 C 95 C
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Hydrothermal deposition of ZnO on seed layer
Hydrothermally grown ZnO rods shows emissions inboth UV and visible range,
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Hydrothermal deposition of ZnO on seed layer
PS buffer layer with different thickness H
ZnO seed layer was electrochemically deposited
H = 1 m H = 4 m H = 6 m
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Hydrothermal deposition of ZnO on seed layer
H = 1 m H = 4 m H = 6 m
Same sampleses after hydrothermal treatment inZn(NO3)2 + HMTA solution at 85 C
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ZnO deposition into porous alumina oxide
1 m
Al sputtering
Al anodization
ZnO deposition
Ti
Ni
Al2O3
ZnO
Si
TiO2
surface cross-section
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Possible Applications of ZnO grown on PS
Photodetectors
Photovoltaic cells (solar cells)
Betta-voltaic cells Gas sensors
Others (scintillation counter, piezo
energy generators, nanomechanics)
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Photodetectors: ZnO/PS heterojunction
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ZnO is transparent conductive material
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Cu
rrent/mA
Voltage / V
Photovoltaic cells: ZnO/Si heterojunction
p g
Z O f b t lt ipage 34/37
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ZnO for beta voltaicbatteries
pincell
Electron beam current / A
Shortcircuitc
urrent/A
Principle of Operation
p g
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Chemical gas sensors
Porous ZnO film surface
p g
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Others
Piezoenergy generators Expected characteristics:Voltage up to 20 mV
Current up to 1 A
Scintillationcounter
High performanceLongevityHigh stopping powerWide luminescence range
(compatible with Si)
p g
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BoltHead
BoltRod
Nanoscrews for Nanomechanics Nanolamps
ZnO crystalls grown on low porosity PS
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http://ru.wikipedia.org/wiki/%D0%A4%D0%B0%D0%B9%D0%BB:Gluehlampe_01_KMJ.jpg -
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As a conclusion: Problems to be solved
Development of the p-type ZnO doping techniques
Improvement of crystalline structure of electrochemicallydeposited ZnO
Improvements of the ZnO deposition process into PAAO matrix
Acknowledgements
This work has been funded by the Belarussian Foundationfor Basic Research under the Project 06-3029 and
by the Rice Technology S.r.l. (Italy)