00001 (1).doc
Transcript of 00001 (1).doc
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( Definition and Specification of Transducer )
1. (Sensor)
2. (Transducer)
1. () ()
2.
3. (amenable)
4. (accuracy)
5. (reproducibility) ( )
6. ( amplitude )
7. ( )
8. ( time lag
9.
10.
( Selection of the Instrument )
1.
1.1
1.2
1.3
1.4 ()
1.5
1.6
1.7 (susceptibility)
2.
2.1 (suitability)
2.2 (adaptability)
2.3
2.4
2.5
2.6 (fool-proof)
2.7
2.8
2.9
2.10
3.
3.1
3.2
3.3
3.4
(Thermal Sensors)
(Definition of Temperature)
1. (Thermal Energy)
(equilibrium position) WTH = 0 WTH > 0
(random)
2. (Temperature)
(Joule) SI
2.1 (Absolute Temperature Scale)
2 (K) (0 R)
( 1K ) = ( 10 R ) = 10 R
T (K) = T (0 R)
T (K) = K
T (0 R) = 0 R
2.2 (Relative to Thermal Energy )
() ()
T (0 C) = T(K) 273.15
T (0 F) = T(R) - 459.6
T (0 F) = T (0 C) + 32
( Relative to Thermal Energy )
WTH = kT
k = 1.38 x 10 23 J/K
(Measurement of Temperature)
1. ( Non-Electrical Methods )
1.1
1.2
1.3
1. (Solid Rod thermometer)
2. (Bimetallic Thermometer)
3. (Liquid-in-Glass Thermometer)
4. (Pressure Thermometer)
5. (Mercury-in-steel Thermometer)
6. (Constant Volume Thermometer)
()
7. ( Vapor Pressure Thermometer )
1. (Temperature Versus Resistance of Metallic)
1 (valance electron ) ( conduction electron )
( stationary atom )
2. ( Resistance Versus Temperature Approximation )
1 L T1T2
( linear approximation ) ( R-T curve )
( resistance Temperature Detectors ; RTD )
( Positive Temperature Coefficient ; PTC ) ( Resistance Temperatures )
Sir Humphry Day 50 Sir Willium Siemens ( PRTD ) ( -182.960 C ) ( 630.740 C ) IPTS
(conductivity) ; (resistivity) 0.4% 1
=
= ; m/V.s
(Type of RTD)
1. PT PT-10, PT-100, PT-1000
2.
3.
4. (drift)
(Characteristic of RTD)
1. (Sensitivity) = 0.00385 //0C ( 0.004/0C ) 100 0.4 1000C
2. (Response Time) ( ) (sheath)
3. (Construction)
4. (Sine Conditioning)
5. (Dissipation Constant)
6. (Range) -1000C 6500C -1800C 3000C
1.
2.
3. (I2R) (Thermocouple) (emf) 2 () Thomus Seebeck ..1821 2
2
(Termoelectric Effect)
1. (Seebeck Effect)
1. emf.
2. emf.
3. emf.
= ; volts/K
T1, T2 = ; K
2. (Peltier Effects) (T2) (T1) (Peltier effect)
3
(Thermocouple Table)
(00c) 2100c j 00c
V(2100c) = 11.3 mV( J, 00c ref.)
4.768 mV s 00c T(4.768 mv) = 5550c ( s, 00c ref.)
(interpole)
VM =
VH VL = TH TL VH
VM VL VM TH TL = VH VL
( Change of Table Reference) 4
J 30 0c 4000c 300c 00c . 1.54 mV () 400 0c 00c 4 0 200C
V(300c) = 1.54 mV ( J , 00c ref.)
V(4000c) = 21.85 mV ( J ,00c ref.)
()
V(4000c) = 20.31 mV ( J ,300c ref.)
Vj0 J 0 0c Vj30 J 300c
(Characteristic of Standard Thermocouples)
1. (Sensitivity) NBS 100 mV
5
2. (Construction) 5 : (peltier element)
#10 # 30 0.02 mm (microwire)
3. (Range)
4. (Time Response)
5. (Signal Conditioning)
(Characteristic in Application of Thermocouple Standard Type)
7 ANSI ASTM
1. S Le Chatelier 1886
S (oxidizing)
(inert)
0 15500c 50 17000c
(630.740c) (1064.430c) IPTS 68
s
(reduzing)
(vacuum)
2. R
R
S
0 16000c
-50 17000c
S
5400c3. B 1954 B 100 16000c 50 17500c
S R
(linearity)
B
R S (double value region) 0-42 0c()
00c 420c
()
4. J BS
BS 1797 Part 30 , 1993
1. Class 1 = -400C +7500C 0.004 x t 1.50C
2. Class 2 = -400C + 7500C 0.0075 x t 2.50C
t
J
BS 7937 Part 30 210 12000c 7600c
J T
00c
5380c
20 0.5%
5. K .. 1916 .. 1916
K
K / K
1. () ( curie point )
2. ( 2000c 6000c ) K
3. 10000c K
4. K
IEC 584( ) 2700c +1,3700c IEC 584 (
1. Class 1 = -400C +1,0000C 0.004 x t 1.50C
2. Class 2 = -400C + 1,2000C 0.0075 x t 2.50C
3. Class 1 = -2000C +400C 0.015 x t 2.50C
t
BS 4937 part 30 ,1993() K ( vx)
K
1800c 1,3500c
(inert)
( 1)
K () 30 6. T
T
K K ( 1000c 1%) 185 3000c 250 400 0c
T
370 0c
( )
20 10%
()
7. E
E
0 8000c K
1.
2. (extention wire)
3.
4.
5.
6.
7. integrate A/D
8.
9. (Thermistors)
Thermally sensitive variable resistor 100 450,000 - (1) (2) 2
(Semiconductor Resistance Versus Temperature)
1. ()
2.
3. (time response) () 0.5 10 10
2
...
25 C
B
,
-100 C 450 C ()
0.5 100 M
1 k 10 M
2000 K 5500 K
> 125 C
300 C
600 C
1 mW/K
8 mW/K
1 22
1 1
1. (sintering dope)
2.
6
(Signal Conditioning)
(Integrated Circuit Temperature Sensors)
335
LM335 5.9
... LM135/LM235/LM335( C)
LM135
LM235
LM335-55 +150
-40 +125
-40 +100
LM335 10 mV/ K
VZ = T
(..)
273
0 C = 273 K
LM335
VZ = 2.73 V + T(..)
5.25
5 mA > IZ > 400 A
LM335 IZVZ 1 mA
5.25
=
(...)
LM335 2.73 0 C 0
5.26 (two point calibration)
1. (wiper) -2.73
2.
3.
4. 2
RZERO RBIAS IZ 34
LM34 National Semiconductor LM34 LM34
1.
2.
EMBED Equation.3
EMBED Equation.3 -50 +300 F
3.
4. 70 mA 0.2 F
5. -50 +300 F LM34C -40 +230 F
LM34 TO-46 LM34C TO-92 LM34 5.27 50 mV 3.00 V +5 -300F 0F 5.27() 300F +3.00 -50F -500
1. ()
2. 5.27 () ()
3. 499 IT VT 499
590/592
590 592 Analog Device AD590 AD592
T K
T C AD590 +0.5C -55 +150C AD592 AD590 -25 +105C 0.5C 25C 0.2C 0 70C
(Design Considerations)
1. (nominal value)
2. 4-20 (isolation)
3.
4.
( 1) (Mechanical Sensors)
(Displacement, Location or Position Sensors)
1.
2. (rolling mill)
3.
4.
5.
(Potentiometer or Potentiometric)
1.
(1) (linear potentionmeter)
(2) (rotary potentiometer)
300 / 2,000 /
2. (Resolution)
Resolution=
3.
(Capacitive and Inductive)
1. (Capacitive)
full scale displacement
Number of turn of wire
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