磁控溅射法在 Si 表面上生长的 ZnO 薄膜的阴极射线荧光
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Transcript of 磁控溅射法在 Si 表面上生长的 ZnO 薄膜的阴极射线荧光
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SiZnO*1) ,2)2)2)2)
1) 2300262) 230026*E-mail: [email protected]
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1 : ZnO
2. ZnO ZnOX
3.
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1. ZnOSiSiZnOZnO
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ZnO ZnSe(1990),SiC(1992),GaN(1994),ZnO(1996)
12 3.37eV[1], 60 meV, ZnSe(22 meV), ZnS(40 meV)GaN (25 meV), ZnO 3
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i ;iiiii (iv)
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1. *Table 1. Characteristics of different substrate materials
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SiSi
a = 5.43 (ZnO: a = 3.252)
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SiZnO1.SiO2 ZnOXRDZnO0020.32.ZnO3.Zn 0020.2,
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ZnO / Si1MBE MOCVD 2 3Sol-gel
ZnO
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2. ZnO2.1.
Si100 Ar10nmZn ZnOAr50%+ O250%210-2Torr40015W1200nmZnO
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2 . ZnO
Table 2. Annealing condition and variation of sample colour of ZnO films
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2.2. ZnOCL ZnO--- 390nm . (XRD)
--- 505nm (-)
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ZnOCL
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:
: 380nm, ; 510nm, 600oC: 387nm, ; 515nm,800oC: 400nm,;520nm950oC: 390nm,;525nm
800oC:,(ZnO:EHP) 950oC:
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:505nm525nm, .
AFM() :
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(c)
Surface morphology of the ZnO films annealed at different temperature studied by AFM. (a) as-grown film, (b) 600oC, 1 hr annealing, (c) 800oC, 1 hr annealing and (d) 950oC, 1 hr annealing.
(a) --- 500nm (b) --- 500nm (c) ---- 1000nm (d) ---- 500nm
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ZnO , Zn2SiO4
(4N)
CL
350400450500550600650Zn2SiO4ZnOWavelength (nm)
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CLZn2Si04 CL525nmZnO4NCL380nm505nm
X(GXRD)
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950o()()GXRD
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1ZnOCL510nm380nm505nm510nm 2600(387nm) : 3.26eV, 380.4nmEHP3.1eV,400nm EHP515nm
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3800: (400nmEHP) Zn2Si04525nm ZnO800(520nm)ZnO
4950: ZnO4#ZnO
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(5) AFM : .
(6) X(GXRD)
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800ZnO
ZnOZnOSi
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Thank you !