Nanoscale Science & Technology

Tel: 13730918070E-mail: guicunli@qust.edu.cn

1200022001320034Nanoscale Science and Technology, Robert W. KelsallJohn Wiley & Sons Ltd, 20055Science, Nature, Nat. Mater., Nat. Nanotech., Angew. Chim. Int. Ed., J. Am. Chem. Soc., Adv. Mater., Nano Letters

1 234

:

:Mesostructure, Macrostructure, Nanostructure, Nanotechnology; nanomaterial, Nanostructure, NanodeviceTop-down, Bottom-up.

(Introduction)

2005:

200410419975200335

( 2005-01-27)

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1.1 Nanoscale science & technology

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(nanometer)nm1 nm=10(-9) m=10 50-100 m, 1 nm1/500001110Nanotechnology is the term used to cover the design, construction and utilization of functional structures with at least one characteristic dimension measured in nanometers.

How small is 1 nanometer? Human Hair

Pt/TiO2

Understanding SizeHow big (small) are we talking about?

10 centimeters

1 centimeterUnderstanding Size

100 micrometersUnderstanding Size

10 micrometersUnderstanding Size

1 micrometerUnderstanding Size

100 nanometersUnderstanding Size

10 nanometersUnderstanding Size

1 nanometerUnderstanding Size

1. (Nano-ST):2080(107)(109) 2. :

19936123456

3.(nanomaterials):

100100 nm

The objects may display physical attributes substantially different from those displayed by either atoms or bulk materials.

100 nm

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4.(Classification of nanostructures)amorphous, singlecrystalline or polycrystalline(the number of dimensions5(1) 0quasi-zero dimensional(100 nm)Systems confined in three dimensionsFullerenes Colloidal particlesSemiconductor quantum dots

HRTEM image of magnetic iron oxide nanoparticle

(2) 11100 nm()Systems confined in two dimensionsInclude nanowires, nanorods, nanofilaments and nanotubes.

(3) 21 100 nmSystems confined in one dimension.include discs or platelets, ultrathin films on a surface and multilayered materials.

(4)Interfacial propertiesa nanocrystalline solid consisting of nanometre-sized crystalline grains each in a specific crystallographic orientation.

(5) MCM-41; SAB-16; Nanoporous silicon; Activated carbonsMCM-41

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The use of bottom-up and top-down techniques in manufacturing

3

1981IBMG. BinningH. RohrerScanning Tunneling Microscope, STM1986

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The principles of physics, as far as I can see, do not speak against the possibility of maneuvering things atom by atom. Put the atoms down where the chemist says, and so you make the substance. - Richard Feynman (1959) Physics Nobel Laureate

1932Ruska1986

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1981G. BinningH. RohrerIBM

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1984GleiterPd, Fe, CuTiO2Nanostructured materials

C60Fullerence1985Smalley2005.10Kroto(Rice)60C60.

Fullerenes 1985 (1996)Robert F. Curl Jr. Richard E. Smalley

Sir Harold W. Kroto

1987ArgonSiegelTiO21988Giant Magneto-ResistiveGMR3//

2007Read Head501994IBM1719953Gb4B600B

1990

1991NECS. Iijima Y. Ando

3 (1990)() (1994)(0-0)(0-3)(0-2) (1994)

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patterning materials on the nanometer scale

Nature

19907Nanostructured Materials, Nanobiology, Nanotechnology19929CauCan80

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200821David K. Ferry

(giant magnetoresistance)(tunneling magnetoresistance)30199740Co400Gbin-2

[4]

100

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19992000

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[5]

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SiO2N2Si3N44~40nmGaN1998

[6]

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[7] RNA15~20nm10nmcancer

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Molecular-scale machines could one day have medical applications such as removing cancerous cells.Nature 451, 770-771 (14 February 2008) |

[8] A B C

1996IBMC6010

1999Science

TRoss Kelly784

1999PhilipKimCharlesLieber500100Nanotube NanotweezersCharles M. Lieber

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a carbon nanotubeb activated carbonc carbon nanotube calcined at 900 oCStorage of hydrogen in single-walled carbon nanotubesH2C

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6500

Peidong Yang

Hierarchically Ordered Oxides

Room-Temperature Ultraviolet Nanowire Nanolasers880-905oC ZnO

Zhong Lin (ZL) Wang

Younan Xia

Our synthesis is based on thermal evaporation of oxide powders under controlled conditions without the presence of catalyst. The desired oxide powders were placed at the center of an alumina tube that was inserted in a horizontal tube furnace, where the temperature, pressure, and evaporation time were controlled. Thermal evaporation of ZnO powders (purity: 99.99%; melting point: 1975C) at 1400C for 2 hours resulted in white woollike products that formed in high yield on the surface of the alumina plate.Nanobelts of Semiconducting oxides

Single-crystal nanorings of ZnO were grown by a solid-vapor process. The raw material was a mixture of ZnO (melting point 1975C), indium oxide, and lithium carbonate powders at a weight ratio of 20:1:1, and it was placed at the highest temperature zone of a horizontal tube furnace. Before heating to a desired temperature of 1400C, the tube furnace was evacuated to 10-3 torr to remove the residual oxygen. The source materials were then heated to 1400C at a heating rate of 20C/min. ZnO decomposes into Zn2+ and O2 at high temperature (1400C) and low pressure (10-3 torr), and this decomposition process is the key step for controlling the anisotropic growth of the nanobelts. After a few minutes of evaporation and decomposition, the Ar carrier gas was introduced at a flux of 50 standard cubic centimeters per minute. The synthesis process was conducted at 1400C for 30 min. The condensation products were deposited onto a silicon substrate placed in a temperature zone of 200 to 400C under Ar pressure of 500 torr.

The ZnO nanohelices were grown with high reproducibility by a vapor-solid process and by using temperature to control growth kinetics. The experimental setup consists of a horizontal high-temperature tube furnace, an alumina tube, a rotary pump system, and a gas-controlling system. First, 2 g of commercial ZnO powder were compacted, loaded into an alumina boat, and positioned at the center of the alumina tube as the source material. The systemwas prepumped to 2*10-2 mbar, and the ramp rate was controlled at 20oC/min to 25-C/min when the temperature was raised from room temperature to 800oC. The furnace was then held at 800oC for 20 min, and the temperature was ramped at 20oC/min from 800- to 1400-C. When the temperature reached 1000-C, argon was introduced as a carrier gas to raise the pressure from 2*10-2 mbar to the desired synthesis pressure of 200 to 250 mbar within ~2.5 min. The solid-vapor deposition was carried out at 1400-C for 2 hours under a pressure of 200 to 250 mbar. The argon carrier gas was kept at a flow rate of 50 sccm (standard cubic centimeters per minute). The as-grown nanohelices of ZnO were deposited onto a polycrystalline Al2O3 substrate at a local temperature of 700- to 800oC and characterized by a variety of microscopes.

,1730

Charles Lieber

Piezoelectric Nanogenerators Basedon Zinc Oxide Nanowire ArraysZhong Lin Wang

Younan Xia

shaped controlled synthesis of gold and siliver nanoparticlesPVP

In a typical synthesis of silver nanocubes, 5 ml of anhydrous ethylene glycol was heated at 160C for 1 hour. 3 ml of ethylene glycol solution of AgNO3 and 3 ml of ethylene glycol solution of PVP were simultaneously added to the ethylene glycol. The reaction mixture was then continued with heating at 160C for another 45 min. The product was dominated by cubic nanoparticles, with a small amount (5%) of silver nanowires. These nanowires could easily be separated from nanocubes through filtration because of their large difference in dimension. In this case, the reaction mixture was diluted with water (25 times by volume) and .ltered through Nucleopore membranes (Whatman, Clifton, NJ) that contained pores 1 m in diameter.

A. Paul Alivisatos

Charles M. Lieber

Air-Stable All-Inorganic Nanocrystal Solar Cells Processed from Solution Alivisatos3%

Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowiresCharles M. LieberCVDFe/Au

SiCSiextrusion

Single-nanowire electrically driven lasersCharles M. Liebergreenblue

2010033100

Mesoporous silica containing iron nanoparticles were prepared by a sol-gel process from tetraethoxysilane hydrolysis in iron nitrate aqueous solution. After gelation of the mixture, the gel was dried for 1week at 60C to remove the excess water and other solvents. The gel was then calcined 10hours at 450C at 10 2 torr. A silica network with relatively uniform pores was obtained with iron oxide nanoparticles embedded in the pores. The iron oxide nanoparticles were then reduced at 550C in 180torr of flowing 9% H2/N2 (110cm3/min) for 5hours to obtain iron nanoparticles. Subsequently, a mixture of 9% acetylene in nitrogen was introduced into the chamber, and carbon nanotubes were formed on the substrate by deposition of carbon atoms obtained from decomposition of acetylene at 700C.

(A) Low-magnification SEM image of a film composed of aligned carbon nanotubes. This film with a thickness of 50 m was obtained by growing for 2 hours. (B) Tip structure of the aligned tubes.

A) High-magnification SEM image of carbon nanotubes growing out from the mesoporous iron/silica substrate and forming an array. These carbon nanotubes have diameters of 30 nm. Spacings between tubes are 100 nm. Most of the carbon nanotubes are approximately perpendicular to the surface of the silica. (B) SEM image of the mesoporous iron/silica substrate before carbon deposition.

High-resolution TEM image of a carbon nanotube.

Very long carbon nanotubes xie2 mm

0.5 nm carbon nanotube

3~401997 Science

(A) TEM image of the carbon nanotubes used as starting material. (B) TEM image of the GaN nanorods that were produced

Schematic process flow for the synthesis of regular arrays of oriented nanotubes on porous silicon by catalyst patterning and CVD

Electron micrographs of self-oriented nanotubes synthesized on n1-type porous silicon substrates. (A) SEM image of nanotube blocks synthesized on 250 mm by 250 mm catalyst patterns. The nanotubes are 80 mm long and oriented perpendicular to the substrate [see (F)]. (B) SEM imageof nanotube towers synthesized on 38 mm by 38 mm catalyst patterns. The nanotubes are 130 mmlong. (C) Side view of the nanotube towers in (B). The nanotubes self-assemble such that the edgesof the towers are perfectly perpendicular to the substrate. (D) Nanotube twin towers, a zoom-inview of Fig. 2C. (E) SEM image showing sharp edges and corners at the top of a nanotube tower.(F) SEM image showing that nanotubes in a block are well aligned to the direction perpendicular to the substrate surface. (G) TEM image of pure multiwalled nanotubes in several nanotube blocksgrown on a n1-type porous silicon substrate.

A Benzene-Thermal Synthetic Route to Nanocrystalline GaN Yi Xie, Yitai Qian, Wenzhong Wang, Shuyuan Zhang, Yuheng Zhang A thermal reaction of Li3N and GaCl3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%.

Transmission electron microscopy image of sample (scale bar, 1 mm), (B) electron diffraction pattern, and (C) SEM image (scale bar, 60 mm).

Dangerous MixtureA method for the synthesis of diamond by reaction of sodium with carbon tetrachloride was described by Y. Li. Readers of this report should be aware that mixtures of sodium and carbon tetrachloride are exceedingly dangerous. After standing for a short period of time, the reaction products are shock-sensitive and highly explosive. John C. Angus

Chemical Engineering Department, Case Western Reserve University, Cleveland, OH 44106-7217, USA

200050002006Science.Superplastic Extensibility of Nanocrystalline Copper at Room Temperature

Ultrahigh Strength and High Electrical Conductivity in Copper

2004NatureWater-repellent legs of water striders

The particles are too small for direct measurements, too large to be described by current rigorous first principle theoretical and computational methods, exhibit too many fluctuations to be treated monolithically in time and space, and are too few to be described by a statistical ensemble. Fundamental understanding and highly accurate predictive methods are critical to successful manufacturing of nanostructured materials, devices, and systems. STM