CHIAHUA HO (何家驊) PH.D

TECHNOLOGY DIRECTOR /

WINBOND ELECTRONICS CORPORATION

半導體元件技術未來展望

(前瞻記憶體為例)

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半導體元件技術未來展望More Moore：記憶體元件

揮發型記憶體：DRAM, SRAM

非揮發型記憶體：NAND, NOR, EEPROM, etc.

Emerging Device：PRAM, MRAM, RRAM, Others

More Moore：邏輯元件

3D FinFET (Cu/Low-K, Strain-Si, HK/MG, FinFET)

SoC, SiP, 3D-IC or 2.5D-IC

Emerging Device：TFET, Ge, III-V, C-based, MoS2-like

More Than Moore

NEMS/MEMS, Sensor, etc.

Bio-related Technology

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Today’s

Focus

研發對於公司的重要性Focus is about saying „No‟. And the result of

that focus is going to be some really great

products where the total is much greater than

the sum of the parts. -- Steve Jobs (1997)

2012 年初 Asymco 的報告中可以看出：回推五年，比起全球科技公司，宏碁研發費用佔營業額比重吊車尾，平均年成長率只有 0.1%。

一定要做研發，但更必須專注！

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國內投入研發之上市半導體製造公司

各公司比較：Logic 1、Memory 1、以及Memory 2三家具備國際大廠研發高度

Logic 1公司於本業研發專精，唯公司規模龐大，具資質潛力者難以發揮長才；Memory 1公司於本業研發專精，研發投入與營收規模比值正常

Logic 2公司於本業研發不足

Memory 2公司研發過於發散，與其營收規模不成比例，尤其正值連續虧損狀態

Memory 3、Memory 4公司已經完全裁撤研發，走向100%代工

Memory 5、Memory 6公司下市，其中Memory 6公司面臨倒閉

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PRAM (Phase-Change Memory): such as Ge2Sb2Te5

Micron, IBM, Macronix, …

MRAM (Magnetic Memory)Toshiba, Everspin, TDK, Samsung, Qualcomm, Hynix, Sony, IBM, …

Toggle-MRAM: Al2O3 based MTJ

STT-MRAM: MgO based MTJ

In-plane: CoFeB

Perpendicular: CoFeB surface anisotropy

RRAM (Resistive Memory)

TMO (Transition-Metal-Oxide RRAM): such as TaOx/Ta2O5

Winbond, tsmc, UMC, Macronix, Samsung, Toshiba, SanDisk, Panasonic, Micron, Hynix, HP,

GF, Sony, SMIC, …

CBRAM (Conductive-Bridge RAM): such as Cu:GSTMacronix, GF, Sony, Adesto, Crossbar, …

PCMO based: PrxCa1-xMnO3

Sharp, …

Polymer: such as Cu:PCNQ

Others

Emerging NVM Device

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Emerging Non-Volatile Family

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Current Drive

Voltage Drive

1965 Report NbOx resistance hysteresis

1966 1st patent of phase-change tech

1971 Predict memristor

1982 Jullier report TMR model

1988 Fert team report GMR

GMR MRAM developments

1995 Modora team report TMR

Development of TMR MRAM

1996 Slonczewski report STT

1998 Saifun NROM patent

1999 Ovonyx PRAM (OUM)

2000 Intel-Ovonyx develop PRAM

2000 PCMO RRAM report

2000 Matrix 3D OTP patent

2001 Sharp report PCMO RRAM

2002 Intel announced polymer memory

2003 TI/Ramtron report 64Mb FeRAM

2004 Freescale report Toggle MRAM

2005 Infenion report CBRAM

2005 Spansion report TMO RRAM

2005 Intel dumps polymer memory

2005 IBM report RaceTrack tech

2006 Fujistu production FeRAM

2006 Samsung report 512Mb PRAM

2006 Freescale production 4Mb MRAM

2007 Fert got Noble Price

2007 Grandis report STT-MRAM

2007 Toshiba report BiCS 3D tech

2008 HP report memristor

2009 Samsung production 512Mb PRAM

2010 NDL report 9nm RRAM

2011 Samsung report high endurance RRAM

2012 Samsung report 16nm STT-MRAM

2013 Toshiba/SanDisk report 32Gb RRAM

2013 Samsung production 128Gb 3D NAND

2013 Panasonic production 2Mb RRAM

Events of Emerging NVM

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PRAM (Phase-Change RAM): Current Drive

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MRAM (Magnetic RAM): Current Drive

Magnetic-Tunnel-Junction (MTJ)

“Basic current MRAM cell structure”

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RRAM (Resistive RAM): Voltage Current Drive

TMO: Oxygen vacancies and ions transportation and

recombination

CBRAM: Ionic metal conduction path rupture and

formation 10

Estimation from ITRS roadmap

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low

WHICH ONE WILL WIN ?

SCM Concept (Storage Class Memory)

Wide range SCM application

WIN depends on what and how performance emerging memory

achieves :

Eg Un-limited endurance of STT-MRAM with poor retention

(<20nm) might be used for DRAM application with non-volatility13

What Could RRAM do (Ex.1) ?

Feasibility of a high speed pattern recognition system using 1k-bit

cross-point synaptic RRAM array and CMOS based neuron chip has

been experimentally demonstrated.

Learning capability of a neuromorphic system comprising RRAM

synapses and CMOS neurons has been confirmed experimentally,

for the first time.14

2012 IEDM,

s10-2

What Could RRAM do (Ex.2) ?

A 130.7mm2 2-Layer 32Gb ReRAM Memory Device in 24nm

Technology

Using Matrix 3D stacking Technology (SanDisk merged Matrix)

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2013 ISSCC,

s12-1

Q & A

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