(Design of High Voltage Power MOSFETs)

(Design of High Voltage Power MOSFETs): Power Metal Oxide Semiconductor FieldEffect TransistorPower MOSFET1970 VLSI 1985 VLSIPower Bipolar Transistor

90

(Static)(DC)(Dynamic)(AC)(DC) (On-state resistance, RDS(on))(Drain-Source Breakdown Voltage, Vds) (Gate-Source Breakdown Voltage, Vgs)(Threshold Voltage,Vth)(Safe Operation Area)(Package)(on wafer)Power N-VDMOSFET(2.1)Power VDMOSFET(2.2(a)(b))

2.1 Power VDMOSFET

2.2 (a)Power VDMOSFET()2.2 (b) Power VDMOSFET()

PowerVDMOSFET 2.3

2.3 2.4RSUBSTRATEREPIRJFETRCHANNEL RCHANNEL 50%HV REPI RJFET RJFET LV HV REPI RJFET REPI (2)RDS(on)RSUBSTRATEREPIRARCHANNELRN+RCONTACT (2)

2.4

3.1VDMOSFET synopsyse TCAD Sentaurus (Poisson's Equation)(Continuity Equation for Electrons and Holes)(Carrier Energy Balance Equation for Electrons and Holes)(Lattice Heat Equation)(Mesh)(Structure)(Material) (Doping Profile)(Physical Model)(Electrode Section)(Boundary Condition)(Solve Section)(Numerical MetlDd) ,Tecplot3.2

3.1(square cell)

3.2 Tecplot Doping Concentration

HV-Series VDMOS(square cell)7(mask)(metal):1. 2.3. Field Oxide growth 4.Active 5.Field Oxide Etch6. Gate Oxide 7. Poly 8.Poly 9.10. P (Well)B )11.Drive in 1150C, 200min13.Source 14.As ,130Kev, 15. BPSG MOSSiO2NSGP.B Poly;LPCVDSiH4+O2+B+P BPSG16.Contact 17. Contact 18.Heavy Body 19.B ,130Kev, 20.(Drive in950C, 80min)

21. 22. Al 23. Metal 24. 25. Passivation 26. 27. 28. TiNiAg(3.1)

3.1

Agilent B1505AMOSFETN1259A(5.1)IDSVDS RDS(on)=VDS/IDS5.2Agilent B1505A

2.5

2.5.1

5.2PN (Space Charge Region)(Breakdown Point)N Agilent B1505A750V(5.3)

5.3VGS ()VGS=VTHAgilent B1505A(5.4)

5.4END