Post on 01-Jun-2020
Time performance of the large dynamic range SiPM
Sen QIAN ( 钱森 ),On Behalf of the PMT Lab
Institute of High Energy Physics, Chinese Academy of Science
qians@ihep.ac.cn 26th. Nov. 2019
Outline
➢ I. The Motivation;
➢ II. The Performance of the SiPM Prototypes;
➢ III. How to improve the timing characterisitc of SiPM;
➢ IV. Summary;
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K/π discrimination at 10GeV/c needs at least 35ps time resolution.
To achieve positive identification of the Kaons up to p~10Gev/c, need to aim for
10-15 ps time resolution per track;
The time resolution of the TOF detector should be a precision of 70ps ~ 30
detected photons.
The Photon Senser? from Hamamastu?BINP? Photek?
MCP-PMT? FPMT? SiPM?…
1.1 Motivation----LHCb - TORCH 3
—The TORCH (Time Of internally Reflected CHerenkov light)
—R&D project –to develop a large-area time-of-flight system for the LHCb Upgrade II.
“The Status of the TORCH time of flight project” @Neville Harnew @ RICH 2018
SiPM dynamic range up to 10000 p.e. is needed for a ECAL for H → γγ
measurements.
Combining the dE/dx and ToF (~50 ps for each particle) measurements leads to an
efficient distinguish between different hadrons.
K/p discrimination efficiency can be improved by 10% with a 50ps time resolution
TOF detector.
The Photon Senser? from Hamamastu?BINP? Photek?
MCP-PMT? FPMT? SiPM?…
1.2 Motivation----CEPC - TOF 4
—The CEPC Circular Electron Positron Collider
— R&D project of the ECAL, HCAL and other detector.
SiPM Multi-MCP-PMT LAPPD
Product SenSL J30035 Photek MAPMT253 ANL+InCOM
QE@400nmPDE: 47%
~20% 20%
CE >90% 100%
Pixel size 35*35μm2 0.48*0.48 mm2 Position resolution <1mm
Operating voltage 26.7V 3500V < 2500V
Gain E6 E6 E7
Dark counts ~50KHz/mm2 <3Hz/mm2 1 Hz/mm2
Rise time@SPE < 1ns --> ~200ps ~200ps ~400ps
TTS@SPE(σ) <1ns --> ~60ps ~40ps ~50ps
Magnetic field Good normal normal
Cost Cheap Expensive Expensive
1.3 The Fast Timing Detectors 5
Outline
➢ I. The Motivation;
➢ II. The Performance of the SiPM Prototypes;
➢ III. How to improve the timing characterisitc of SiPM;
➢ IV. Summary;
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S12571-010C C30035 11-3030C-E
Company Hamamatsu SenSL NDL
Effective Active Area 1mm*1mm 3mm*3mm 3mm*3mm
Effective Pitch 10μm 35μm 10μm
Pixel Number 10 K 5 K 90 K
Recommended
Temperature25℃ 21℃ 20℃
Operation Voltage 69.5V -27V 32.5V
Gain 5E5 3E6 2E5
PDE@420nm 10%(+4.5V) 41%(+5V) 31%(+5V)
2.1 The SiPM Prototypes for Test 7
TDC: 35ps@ LSB
The ps leaser: 45ps jet
The sigma of facility :25ps
HDO9000 / HDO9000-MS High Definition OscilloscopesSigma@Osc=23.4 ps
2.2 The TTS test Facility in the PMT-Lab 8
2.3 The performance of SiPM(1)--S12571-010C
TTS@3p.e. : 242.3±1.3 ps@σ
3p.e.
MPE spectrum Waveform
RT@72mV=1.4ns
1.35ns 25ps
The rise time is about 1.35 ns when the number of p.e is more than 60.
The Limitation TTS is about 25ps when this SiPM generating big signals.
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2.3 The performance of SiPM(2)—SenSL C30035
F out waveform S out waveformBiasing and readout circuit D
RT@4.2mV
=600psRT@34mV
=178ps
Rise Time TTS
170ps 11ps
There is no amplifier when measuring the C30035, thus p.e is represented by amplitude.
As the amplitude increases, the rise time and TTS become smaller. The Limitation TTS is about
11ps when the RT of the signal is about 170ps.
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Ref: D. Han, Y. Peng, K. Liang, R. Yang. NDL SiPMs and its potential applications, 2019.
2.3 The performance of SiPM(3)—NDL 11-3030C-E
• Small micro cell, high micro cell density --> large dynamic range( >20K p.e.)• The time resolution of the SiPM changes with overvoltage.
AmplifierReadout board
N D L
(Novel Device Laboratory,Beijing)
Tel: +86-10-62207419
Email: info@ndl-sipm.net,
http://www.ndl-sipm.net/device.html
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Amp=2.2mV(10p.e),RT=3.4nsTTS(Sigma)=273.5ps@2.2mV
NDL SiPM was tested without using its own amplifier.
Amp=102mV(500p.e),RT=1.46nsTTS(Sigma)=14.6ps@102mV
Amplitude/mV RT/ns TTS/ps
2.2 3.4 273.5
6.8 1.8 57.3
24.8 1.54 30.2
48.6 1.44 18.3
80.5 1.47 16.9
102 1.46 14.6
150.8 1.45 15.6
The rise time is 1.45 ns,TTS is 14.6 ps when SiPM with larger signals. As the amplitude increases, the trend of rise time and TTS is consistent.
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S12571-010C C30035 11-3030C-E
Temperature in the Lab 27℃ 27℃ 27℃
Electronic Board
Waveform
Limitation Rise Time 1.35 ns 0.17 ns 1.45 ns
Operation Voltage 69.5V -27V 32.5V
TTS@SPE by Company 106ps - 85.1ps
TTS@Sigma
242 ps@3pe 118 ps@1.1mV 273 ps@10pe
43 ps@30pe 51 ps@5.2mV 30 ps@120pe
24 ps@200pe 11 ps@33.2mV 15 ps@500pe
2.4 The Timing Characteristics of the SiPM Prototypes 13
Outline
➢ I. The Motivation;
➢ II. The Performance of the SiPM Prototypes;
➢ III. How to improve the timing characterisitc of SiPM;
➢ IV. Summary;
14
For the SiPM Prototype:
----the Low Voltage for Operation: Energy Resolution VS Time Resolution;
----the Threshold for DAQ: Noise? Trigger Mode? ……
----the Temperature: Gain/ Dark Noice VS Temperature? ……
----the Electromagnetic shielding: Noise? ……
----the Excitation source: Photon?Gamma?Electron?Neutron? ……
----the Others? ……
For the Electronic:
----the Low Voltage Power Supply: the Noise? the Ripple? ……
----the Amplifier : the Noise? the Impedance? ……
----Temperature compensation:How to keep the same gain in different temperature?
By adjusting the voltage or by the data correction?
----the DAQ system : TDC VS FADC? the Impedance? ……
3.0 How to Improve the Timing of the SiPM 15
3.1 The R&D of a new Electronic Board in the PMT-Lab
Version 1 Version 2 Version 3
Version 1, in 2017: The Power module has been able to provide stable voltage from 20V to
90V for SIPM, Achieve Low Noise and good Energy Resolution.
Version 2, in 2018: Due to the interface selection of RS422-USB serial port, this type of
Board can be connected to Multiple-Modules together in parallel for unified control.
Version 3, in 2019: By improving the design and Electronic components, the quality of
the signal from the SiPM is good for better Enerngy Resolution and Time Resolution.
The Electronic Board: LV power supply + Amplifier +Temperature compensation module
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Modules △Mean 1 p.e. ER 2 p.e. ER 3 p.e. ER
Hamamatsu 37.76 13.32% 13.03% 15.17%
Self-developed 35.01 14.45% 14.32% 16.44%
17*ER= Energy resolution
3.2 The Performance of the Electronic Board for the same MPPC (1)
Hamamatsu EB.V3
17
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3.2 The Performance of the Electronic Board for the same MPPC (2)
3# EB.V2 in signle mode
3# EB.V2
Address △Mean1 △Mean2 △Mean3 1P.E 2P.E 3P.E
3# EB.V2Single-Board 43.50 45.40 45.30 15.70% 16.70% 16.82%
Multi-Boards 42.90 45.50 45.60 17.48% 18.22% 19.91%
3# EB.V2
3# EB.V2 in Multi- mode
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3.3 The Timing Characteristic of the same MPPC (1)
Hamamatsu
3# EB.V3
S12571-025C
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TTS: 65.62 ± 0.33 ps
TTS
@
11 p.e.
RT
@
11p.e.
The RT and TTS of EB.V3 module test is better than the one of Hamamatsu.
TTS: 313.9 ± 1.2 ps
RT: 1.59 ± 0.33ns RT 1.19 ± 0.06ns
3.3 The Timing Characteristic of the same MPPC (2)
Hamamatsu EB.V3
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3.4 The LV / Thr. of the MPPC for better Timing 21
Photoelectrons= 9p.e.
Temperature=27℃
S12571-010C
With the Electronic Board
by Hamamatsu
Operating voltage:70V;
Overvoltage: 5V;
Threshold: 10%-90% of the Amplitude
Best Threshold: 50%
Threshold: 50% of the Amplitude
Operating voltage 68V~74V;
Overvoltage 3V~9V;
Best Overvoltage: 5V ~ 65ps
IV. Summary
1. Some SiPMs could have the better time resolution about 20ps with large
photons, as better as the FPMTs; but the TTS@SPE is really difficutly to test
for the large DR.
2. In our Lab, we have already designed a special Electrinic Board for the
SiPM, with LV power supply, Amplifier , Temperature Compensation
module together, and also could be connected to multiple modules together
in parallel for unified control.
3. With this special type of Electrinic Board, the time characteristics (RT, TTS)
of the same SiPM could be improved a lot.
4. The Over Voltage, the Threshold, et.al could also affected the Energy
Resloution and Time Resolution of the SiPM,
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Thanks for your attention!
The performance of SiPM—SenSL C30035
The microcell structure schematic has a capacitively coupled output. The fast output is
formed from the sum of all microcells.
Sout----standard output
Fout----fast output