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RFIC Design ELEN 351 Lecture 1: General Discussion

Instructor: Dr. Allen Sweet

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General Information

• Instructor: Dr. Allen Sweet• Email: allensweet@aol.com• Home work/project submissions: Place all

schematics, graphics, and layouts in a power point or ms word file and email to instructor. Hard copy is also acceptable.

• Grade: Based on homework, midterm, and project.

• Reference books: See handout list for suggestions.

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Recommended General Software

• Ms Word• Ms Power Point• Snagit utility (demo at www.snagit.com)• APPCAD (Available from Agilent)

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Simulator Options

• ADS by Agilent• Ansoft Serenade (RF package is called

Harmonica). Student version is available at www.ansoft.com/about/academics/sersv/index.cfm Note: the student version is limited to only 25 nodes and 2 transistors.

• Genesys by Eagleware• Golden Gate by Xpedian

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Layout tool Options

• ICEditor (demo is available at www.iceditors.com, however files cannot be saved)

• Mentor Graphics• Cadence• AutoCAD • Fast CAD (demo is available at

www.fastcad.com, )

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Course Outline• General RF/wireless concepts, simulators, simple

design example.• Receiver/Transmitter architectural options• Layout techniques• PA Design• LNA Design• Mixer Design• VCO Design• Battery issues and tradeoffs, economics of RFICs• Technology comparison

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What is an RFIC?

• Any integrated circuit for used in the frequency range: 100 MHz to 6 GHz.

• Generally RFIC’s contain the analog front end of a radio transceiver, or some part of it.

• RFIC’s can be the simplest SP1T switch, up to the whole front end of a radio transceiver.

• RFIC’s are fabricated in a number of technologies: Si Bipolar, Si CMOS, GaAs HBT, GaAs MESFET/HEMT, and SiGe HBT are today’s leading technologies.

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Typical Applications for RFICs

• Cellular / PCS phones• Cellular / PCS infrastructure• WLANS• GPS• BlueTooth• Wireless PDAs• Mobile Communications

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Basic Radio Link

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Path Loss Defines the Received RF Signal Level

Signal to Noise ratio

(In dB’s)

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Shannon’s law gives Maximum Data Rate in an RF Channel

• Rmax = BW LOG2( 1 + S/N), where BW is the RF channel’s bandwidth in MHz and Rmax if the Maximum possible data rate for this channel in MBits per second.

• All practical MOD- DEMOD systems can only approach Shannon’s limit.

• Radio Spectrum is a precious commodity! It must be used wisely, to handle the growing amount of wireless information flow.

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Multiple Access Techniques Conserve Valuable Spectrum

• Frequency Division Multiple Access (FDMA)

• Time Division Multiple Access (TDMA)• Code Division Multiple Access (CDMA)

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FDMA

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TDMA

Data Packets

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CDMA

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Block Diagram of a CDMA System

Note: Spreading and De Spreading codes are identical

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Two Port S Parameters

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Types of Device Models

• S Parameter: Limited to small signal gain and match analysis only.

• Equivalent Circuit: Same limitations as the S Parameter Model, except it is scalable with area.

• Load Pull Impedance: For PA design, limited in usefulness to output circuit design only.

• Large Signal Model: No limitations, this is the most useful class of models.With these models, ALL measurable parameters can be simulated.

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Types of Large Signal Models

• GaAs HBT: Gummel-Poon, and VBIC• GaAs MESFET: Curtice, TOM, Materka,

Statz, Tajima, • GaAs HEMT: EE_HEMT• Si Bipolar: Gummel-Poon• CMOS: Many

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The Impedance Smith Chart

OPEN(RESISTIVE AXIS)

INDUCTIVE

CAPACITIVE

LINES OF CONSTANTREACTANCE

CIRCLES OF CONSTANTRESISTANCE

Z0 POINT

SHORT

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Impedance locus of a 10 ohm Resistor in series with a 5 nH coil

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Impedance locus of a 10 ohm Resistor in series with a 5 pF cap

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Impedance locus of an ideal 50 Ohm transmission line, Grounded

at one end

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RFIC Design Process Steps

• Specifications• Identify Topology options (literature search)• Choose a Foundry• Obtain Foundry’s Device Models and Design

Rules• Initial Simulations• Choose final Topology• Stability Analysis (Amplifiers only)• Temperature Analysis

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RFIC Design Process Steps, Continued

• Initial Layout• Include all Layout Parasitic elements in Topology• Minimize Layout Area, Preserving Performance

The Art of the Trade Off• Complete Final Layout• Create Test Cells for Critical Circuit Blocks• DRC at the Foundry• Assemble the Reticle, Tapeout• Mask Making, Wafer Fabrication

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Homework Assignment #1: Simulate the following Amplifier

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Circuit Details:FEEDBACKRESISTOR

INPUTBLOCKINGCAP

OUTPUTBLOCKING CAP

BIAS CHOKE

TRANSISTORAREA=3 FINGERS

BASE BIASSTABILIZING RESISTOR

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Gummel Poon InGaP/GaAs HBT Device Model: 2x12 micron

emitter finger

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Simulated Gain/Match/DC Conditions

GAIN

INPUT MATCH

OUTPUT MATCH

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Smith Chart Display: Amplifier’s Input and Output Impedances

INPUT IMPEDANCE

OUTPUT IMPEDANCE

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Simulated Noise Figure

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Simulated Stability Factor (K)